Philips PMBFJ111, PMBFJ112, PMBFJ113 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

PMBFJ111;
PMBFJ112; PMBFJ113

N-channel junction FETs

Product specification
File under Discrete Semiconductors, SC07

April 1995

Philips Semiconductors Product specification

N-channel junction FETs

FEATURES

• High-speed switching

• Interchangeability of drain and

source connections

• Low R
( < 30 Ω for PMBFJ111).

DESCRIPTION

Symmetrical N-channel junction
FETs in a surface mount SOT23
envelope. Intended for use in
applications such as analog switches,
choppers, commutators, multiplexers
and thin and thick film hybrids.

PINNING - SOT23

PIN DESCRIPTION

1 drain
2 source
3 gate

Note

1. Drain and source are

interchangeable.

at zero gate voltage

DSon

PMBFJ111;

PMBFJ112; PMBFJ113

handbook, halfpage

12

Top view

Fig.1 Simplified outline and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
V
I

DS
GSO
GDO

G

drain-source voltage −±40 V
gate-source voltage −−40 V
drain-drain voltage −−40 V
forward gate current

(DC)

P

tot

T

stg

T

j

total power dissipation T

storage temperature −65 150 °C
operating junction

temperature

3

=25°C;

amb

note 1

g

MAM385

d
s

− 50 mA

− 300 mW

− 150 °C

April 1995 2