Philips PMBF5484, PMBF5485, PMBF5486 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
PMBF5484; PMBF5485;
PMBF5486
N-channel field-effect transistors
Product specification
File under Discrete Semiconductors, SC07
April 1995
Philips Semiconductors Product specification
N-channel field-effect transistors
FEATURES
• Low noise
• Interchangeability of drain and
source connections
• High gain.
DESCRIPTION
N-channel, symmetrical, silicon
junction FETs in a surface-mountable
SOT23 envelope. Intended for use in
VHF/UHF amplifiers, oscillators and
mixers.
PINNING - SOT23
PIN DESCRIPTION
1 source
2 drain
3 gate
QUICK REFERENCE DATA
handbook, halfpage
12
Top view
Fig.1 Simplified outline and symbol.
PMBF5485; PMBF5486
3
PMBF5484;
g
MAM385
d
s
MARKING CODES:
PMBF5484: p6B
PMBF5485: p6M
PMBF5486: p6H
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
drain-source
− 25 V
voltage
I
DSS
drain current VDS = 15 V; VGS = 0
PMBF5484 1 5 mA
PMBF5485 4 10 mA
PMBF5486 8 20 mA
P
tot
total power
up to T
= 25 °C − 250 mW
amb
dissipation
V
GS(off)
gate-source cut-off
voltage
VDS = 15 V;
ID = 1 nA
PMBF5484 −0.3 −3V
PMBF5485 −0.5 −4V
PMBF5486 −2 −6V
Y
common source
fs
transfer admittance
VDS = 15 V;
VGS = 0; f = 1 kHz
PMBF5484 3 6 mS
PMBF5485 3.5 7 mS
PMBF5486 4 8 mS
April 1995 2
Philips Semiconductors Product specification
N-channel field-effect transistors
PMBF5484; PMBF5485;
PMBF5486
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
V
GSO
V
GDO
I
G
P
tot
T
stg
T
j
THERMAL RESISTANCE
SYMBOL PARAMETER THERMAL RESISTANCE
R
th j-a
Note
1. Device mounted on an FR4 printed-circuit board.
drain-source voltage − 25 V
gate-source voltage −−25 V
gate-drain voltage −−25 V
DC forward gate current − 10 mA
total power dissipation up to T
= 25 °C (note 1) − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
from junction to ambient (note 1) 500 K/W
STATIC CHARACTERISTICS
= 25 °C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
(BR)GSS
I
DSS
gate-source breakdown voltage VDS = 0; IG = −1 µA −25 − V
drain current VDS = 15 V; VGS = 0
PMBF5484 1 5 mA
PMBF5485 4 10 mA
PMBF5486 8 20 mA
I
GSS
V
GSS
V
GS(off)
reverse gate leakage current VDS = 0; VGS = −15 V −−1nA
gate-source forward voltage VDS = 0; IG = 1 mA − 1V
gate-source cut-off voltage VDS = 15 V; ID = 1 nA
PMBF5484 −0.3 −3V
PMBF5485 −0.5 −4V
PMBF5486 −2 −6V
Y
common source transfer admittance VDS = 15 V; VGS = 0
fs
PMBF5484 3 6 mS
PMBF5485 3.5 7 mS
PMBF5486 4 8 mS
Y
common source output admittance VDS = 15 V; VGS = 0
os
PMBF5484 − 50 µS
PMBF5485 − 60 µS
PMBF5486 − 75 µS
April 1995 3
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