Philips plb16030u DATASHEETS
DISCRETE SEMICONDUCTORS
DATA SH EET
PLB16030U
NPN microwave power transistor
Product specification
Supersedes data of November 1994
1997 Feb 18
Philips Semiconductors Product specification
NPN microwave power transistor PLB16030U
FEATURES
• Input and output matching cell
allows an easier design of circuits
• Diffused emitter ballasting resistors
providing excellent current sharing
and withstanding a high VSWR
• Interdigitated structure provides
high emitter efficiency
• Gold metallization realizes very
stable characteristics and excellent
lifetime
• Multicell geometry gives good
balance of dissipated power and
low thermal resistance.
APPLICATIONS
Common base class B power
amplifiers at 1.6 GHz. Also suitable
for operation in the frequency range
1.4 to 1.8 GHz.
DESCRIPTION
NPN silicon planar epitaxial
microwave power transistor in a
SOT437A glued cap metal ceramic
flange package with base connected
to flange.
QUICK REFERENCE DATA
Microwave performance up to Tmb=25°C in a common base class B
narrowband amplifier.
MODE OF
OPERATIONf(GHz)
V
(V)
CC
P
(W)
L
G
p
(dB)
η
(%)
C
Zi; Z
(Ω)
Class B (CW) 1.6 28 >30 >7 >45 see Figs 5
and 6
PINNING - SOT437A
PIN DESCRIPTION
1 collector
2 emitter
3 base connected to flange
handbook, 4 columns
Top view
1
c
b
3
2
e
MAM112
Fig.1 Simplified outline and symbol.
L
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 18 2
Philips Semiconductors Product specification
NPN microwave power transistor PLB16030U
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
CES
V
EBO
I
C
P
tot
T
stg
T
j
T
sld
Note
1. Up to 0.3 mm from ceramic.
collector-base voltage open emitter − 45 V
collector-emitter voltage open base − 15 V
collector-emitter voltage RBE=0Ω−40 V
emitter-base voltage open collector − 3V
collector current (DC) − 2.6 A
total power dissipation Tmb=75°C − 40 W
storage temperature −65 +150 °C
operating junction temperature − 200 °C
soldering temperature t ≤ 10 s; note 1 − 235 °C
60
handbook, halfpage
P
tot
(W)
40
20
0
−50
P
=40W.
tot max
0
50 100
MCD394
150
Tmb (
Fig.2 Maximum power dissipation derating as a
function of mounting base temperature.
6
P
SOURCE
MCD395
8
(W)
40
handbook, halfpage
P
L
(W)
30
20
10
0
200
o
C)
024
VCC= 28V; f = 1.6 GHz.
Fig.3 Load power as a function of source power.
1997 Feb 18 3
Philips Semiconductors Product specification
NPN microwave power transistor PLB16030U
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MAX. UNIT
R
th j-mb
R
th mb-h
Note
1. See
“Mounting recommendations in the General part of handbook SC19a”.
CHARACTERISTICS
=25°C unless otherwise specified.
T
mb
SYMBOL PARAMETER CONDITIONS MAX UNIT
I
CBO
I
CES
I
EBO
thermal resistance from junction to mounting base Tj= 100 °C 2.4 K/W
thermal resistance from mounting base to heatsink note 1 0.3 K/W
collector cut-off current VCB= 28 V; IE= 0 0.9 mA
V
= 35 V; IE= 0 1.8 mA
CB
collector cut-off current VCE= 28 V; RBE=0Ω 1.8 mA
emitter cut-off current VEB= 1.5 V; IC=0 90 µA
APPLICATION INFORMATION
Microwave performance up to T
MODE OF
OPERATION
Class B (CW); note 1 1.6 28 ≥30 ≥7;
=25°C in a common-base test circuit and working in CW class B mode.
mb
f
(GHz)
V
(V)
CC
P
(W)
L
G
p
(dB)
η
(%)
C
≥45;
typ. 8.2
typ. 52
Zi; Z
L
(Ω)
see Figs 5 and 6
Class B - 100 ms 50% 1.6 28 typ. 38 typ. 8.8 typ. 56
Note
1. May be used for narrowband or broadband amplifiers within the frequency range 1.4 to 1.8 GHz. Operation below
1.4 GHz may damage the transistor due to resonance of the internal output prematching circuit.
List of components (see Fig.4)
COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.
L1, L2 5 turns 0.2 mm diameter copper wire int. dia. 2 mm
C1 DC blocking capacitor 100 pF
C2 feedthrough bypass capacitor Erie, ref.1250-003
C3, C4 trimmer capacitor 0.4 to 2.5 pF Tekelec AT-3-7281SL
C5 electrolytic capacitor 150 µF
1997 Feb 18 4
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