Philips PLB16004U Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

PLB16004U

Microwave power transistor

Product specification
Supersedes data of December 1994

1997 Feb 18

Philips Semiconductors Product specification

Microwave power transistor PLB16004U

FEATURES

• Diffused emitter ballasting resistors
improve excellent current sharing
and withstanding a high VSWR

• Interdigitated common-base
structure provides high emitter
efficiency

• Gold metallization with barrier
realizes very stable characteristics
and excellent lifetime

• Multicell geometry gives good
balance of dissipated power and
low thermal resistance

• Internal input and output
prematching networks allow an
easier design of circuits.

APPLICATIONS

Intended for use in common-base
class C power amplifiers at 1.6 GHz.

DESCRIPTION

NPN silicon planar epitaxial
microwave power transistor in a
SOT437A glued cap metal ceramic
flange package, with base connected
to flange.

QUICK REFERENCE DATA

Microwave performance up to T

=25°C in a common base class C

mb

narrowband amplifier.

MODE OF

OPERATIONf(GHz)

V

(V)

CC

P

(W)

L

G

(dB)

p

η

C

(%)

Zi; Z

(Ω)

Class C (CW) 1.6 28 >4.5 >8.5 >40 see Figs 5

and 6

PINNING - SOT437A

PIN DESCRIPTION

1 collector
2 emitter
3 base connected to flange

handbook, 4 columns

Top view

1

c

b

3

2

e

MAM112

Fig.1 Simplified outline and symbol.

L

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.

1997 Feb 18 2

Philips Semiconductors Product specification

Microwave power transistor PLB16004U

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CES

V

CEO

V

EBO

I

C

P

tot

T

stg

T

j

T

sld

Note

1. Up to 0.3 mm from ceramic.

collector-base voltage open emitter − 40 V
collector-emitter voltage RBE=0 − 40 V
collector-emitter voltage open base − 15 V
emitter-base voltage open collector − 3V
DC collector current − 0.5 A
total power dissipation Tmb=75°C − 9W
storage temperature −65 +150 °C
junction temperature − 200 °C
soldering temperature t ≤ 10 s; note 1 − 235 °C

10

handbook, halfpage

P

tot

(W)

8

6

4

2

0

05050 100 200

150

T ( C)

mb

Fig.2 Power derating curve.

MLC457

o

1997 Feb 18 3

Philips Semiconductors Product specification

Microwave power transistor PLB16004U

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MAX. UNIT

R

th j-mb

R

th mb-h

Note

1. See

“Mounting recommendations in the General part of handbook SC19a”.

CHARACTERISTICS

=25°C unless otherwise specified.

T

mb

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

I

CES

V

(BR)CBO

V

(BR)CES

V

(BR)EBO

h

FE

thermal resistance from junction to mounting base Tj= 100 °C 11 K/W
thermal resistance from mounting base to heatsink note 1 0.3 K/W

collector cut-off current RBE= 0; VCE=30V − 200 µA
collector-base breakdown voltage IC= 1 mA; IE=0 40 − V
collector-emitter breakdown voltage IC= 1 mA; IE=0 40 − V
emitter-base breakdown voltage IC= 1 mA; IE=0 3 − V
DC current gain IC= 300 mA; VCE= 5 V 15 100

APPLICATION INFORMATION

Microwave performance up to T

MODE OF

OPERATION

f

(GHz)

=25°C in a common-base test circuit as shown in Fig.3.

mb

V

(V)

CC

P

(W)

L

G

(dB)

p

η

(%)

C

Zi; Z

L

(Ω)

Class C (CW) 1.6 28 typ. 5 typ. 10 typ. 50 see Figs 5 and 6

1997 Feb 18 4