Philips PIP 3102 R Service Manual

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Philips Semiconductors Product Specification

Logic level TOPFET PIP3102-R

DESCRIPTION QUICK REFERENCE DATA

Monolithic logic level protected SYMBOL PARAMETER MAX. UNIT power MOSFET using TOPFET2 technology assembled in a 5 pin V surface mounting plastic package. I

APPLICATIONS T

General purpose switch for driving

P R

tot j

DS(ON)

lamps SYMBOL PARAMETER NOM. UNIT motors solenoids V

heaters

FEATURES FUNCTIONAL BLOCK DIAGRAM

TrenchMOS output stage with

low on-state resistance

Separate input pin for higher

frequency drive

5 V logic compatible input

Separate supply pin for logic and protection circuits with low operating current

Overtemperature protection

Drain current limiting

Short circuit load protection

Latched overload trip state reset by the protection pin

Diagnostic flag pin indicates protection supply connected, overtemperature condition,overload tripped state, or open circuit load (detected in the off-state)

ESD protection on all pins

Overvoltage clamping

PROTECTION SUPPLY

FLAG

INPUT

Continuous drain source voltage 50 V Continuous drain current 30 A Total power dissipation 90 W

Continuous junction temperature 150 ˚C Drain-source on-state resistance 28 mΩ

Protection supply voltage 5 V

DRAIN

OC LOAD

DETECT

RIG

LOGIC AND

PROTECTION

O/V

CLAMP

POWER MOSFET

SOURCE

Fig.1. Elements of the TOPFET.

PINNING - SOT426 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION

1 input 2 flag 3 (connected to mb) 4 protection supply 5 source

12 45

TOPFET

P F

Fig. 2. Fig. 3.

mb drain

October 2002 1 Rev 1.000

Philips Semiconductors Product Specification

Logic level TOPFET PIP3102-R

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Continuous voltage

Drain source voltage

Continuous currents

Drain current VPS = 5 V; T

Input current -5 5 mA Flag current -5 5 mA Protection supply current -5 5 mA

Thermal

tot

stg

sold

Total power dissipation Tmb = 25˚C - 90 W Storage temperature -55 175 ˚C

Junction temperature Mounting base temperature during soldering - 260 ˚C

VIS = 0 V - 50 V

25˚C - self - A

VPS = 0 V; T

mb =

85˚C - 30 A

mb =

limited

continuous - 150 ˚C

ESD LIMITING VALUE

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Electrostatic discharge capacitor Human body model; - 2 kV voltage C = 250 pF; R = 1.5 kΩ

OVERLOAD PROTECTION LIMITING VALUE

With an adequate protection supply For overload conditions an n-MOS The drain current is limited to connected, TOPFET can protect transistor turns on between the reduce dissipation in case of short itself from two types of overload - input and source to quickly circuit load. Refer to OVERLOAD overtemperature and short circuit discharge the power MOSFET CHARACTERISTICS. load. gate capacitance.

SYMBOL PARAMETER REQUIRED CONDITION MIN. MAX. UNIT

Overload protection

Drain source voltage VPS ≥ 4 V 0 35 V

protection supply

OVERVOLTAGE CLAMPING LIMITING VALUES

At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Inductive load turn off IDM = 20 A; VDD ≤ 20 V

DSM

DRM

Non-repetitive clamping energy Tmb = 25˚C - 350 mJ Repetitive clamping energy Tmb ≤ 95˚C; f = 250 Hz - 45 mJ

1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy. 2 A higher Tj is allowed as an overload condition but at the threshold T 3 All control logic and protection functions are disabled during conduction of the source drain diode. If the protection circuit was previously

latched, it would be reset by this condition.

the over temperature trip operates to protect the switch.

j(TO)

October 2002 2 Rev 1.000

Philips Semiconductors Product Specification

Logic level TOPFET PIP3102-R

THERMAL CHARACTERISTIC

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Thermal resistance

th j-mb

OUTPUT CHARACTERISTICS

Limits are for -40˚C ≤ Tmb ≤ 150˚C; typicals are for Tmb = 25˚C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

(CL)DSS

DSS

Junction to mounting base - - 1.2 1.39 K/W

Off-state VIS = 0 V Drain-source clamping voltage ID = 10 mA 50 - 70 V

= 4 A; tp ≤ 300 µs; δ ≤ 0.01 50 60 70 V

Drain source leakage current1VPS = 0 V; VDS = 40 V - - 100 µA

Tmb = 25˚C - 0.1 10 µA

On-state tp ≤ 300 µs; δ ≤ 0.01; VPS ≥ 4 V

DS(ON)

Drain-source resistance IDM = 10 A; VIS ≥ 4.4 V - - 50 mΩ

Tmb = 25˚C - 21 28 mΩ

INPUT CHARACTERISTICS

Limits are for -40˚C ≤ Tmb ≤ 150˚C; typicals are for Tmb = 25˚C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Normal operation

V R

ISL

IS(TO)

(CL)IS

Input threshold voltage

Input current VIS = 5 V - 16 100 µA Input clamping voltage II = 1 mA 5.5 6.4 8.5 V Internal series resistance Overload protection latched VPS ≥ 4 V Input current VIS = 5 V 1 2.7 4 mA

ID = 1 mA 0.6 - 2.6 V

Tmb = 25˚C 1.1 1.6 2.1 V

to gate of power MOSFET - 1.7 - kΩ

1 The drain current required for open circuit load detection is switched off when there is no protection supply, in order to ensure a low off-state

2 The measurement method is simplified if VPS = 0 V, in order to distinguish ID from I

3 This is not a directly measurable parameter.

quiescent current. Refer to OPEN CIRCUIT LOAD DETECTION CHARACTERISTICS.

. Refer to OPEN CIRCUIT LOAD DETECTION

CHARACTERISTICS.

DSP

October 2002 3 Rev 1.000

Philips Semiconductors Product Specification

Logic level TOPFET PIP3102-R

PROTECTION SUPPLY CHARACTERISTICS

Limits are for -40˚C ≤ Tmb ≤ 150˚C; typicals are for Tmb = 25˚C.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Protection & detection

PSF

, I

(CL)PS

PSL

Threshold voltage

Normal operation or protection latched

Supply current VPS = 4.5 V - 210 450 µA Clamping voltage IP = 1.5 mA 5.5 6.5 8.5 V

Overload protection latched

IF = 100 µA; VDS = 5 V 2.5 3.45 4 V

PSR

Reset voltage 1 1.8 3 V Reset time VPS ≤ 1 V 10 45 120 µs

OPEN CIRCUIT LOAD DETECTION CHARACTERISTICS

An open circuit load condition can be detected while the TOPFET is in the off-state. Refer to TRUTH TABLE. VPS = 5 V. Limits are for -40˚C ≤ Tmb ≤ 150˚C and typicals are for Tmb = 25˚C.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I V

DSP

DSF

ISF

Off-state drain current Drain threshold voltage

Input threshold voltage

VIS = 0 V; 2 V ≤ VDS ≤ 40 V 0.9 1.8 2.7 mA VIS = 0 V 0.2 1 2 V

ID = 100 µA 0.3 0.8 1.1 V

OVERLOAD CHARACTERISTICS

Tmb = 25˚C unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Short circuit load VPS > 4 V

P T

D(TO)

DSC

Drain current limiting VIS = 5 V; -40˚C ≤ Tmb ≤ 150˚C 28.5 44 60 A Overload protection VPS > 4 V Overload power threshold device trips if PD > P

D(TO)

Characteristic time which determines trip time

75 185 250 W

250 380 600 µs

Overtemperature protection VPS = 5 V

j(TO)

1 When VPS is less than V 2 The drain source current which flows in a normal load when the protection supply is high and the input is low. 3 If VDS < V 4 For open circuit load detection, VIS must be less than V 5 Trip time t

Threshold temperature from ID ≥ 4 A or VDS > 0.2 V 150 170 - ˚C

the flag pin indicates low protection supply voltage. Refer to TRUTH TABLE.

PSF

then the flag indicates open circuit load.

DSF

ISF

varies with overload dissipation PD according to the formula t

d sc

≈ T

/ ln[ PD / P

DSC

D(TO)

October 2002 4 Rev 1.000

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