Philips PIMH9 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

book, halfpage

M3D302

PIMH9

NPN resistor-equipped double
transistor; R1 = 10 kΩ, R2=47kΩ

Product specification 2001 Sep 13

Philips Semiconductors Product specification

NPN resistor-equipped double transistor;
R1=10kΩ, R2 = 47 kΩ

FEATURES

• Transistorswithbuilt-inbiasresistors(R1typ.10 kΩand
R2 typ. 47 kΩ)

• No mutual interference between the transistors

• Simplification of circuit design

• Reduces number of components and board space.

APPLICATIONS

• General purpose switching and amplification

• Inverter and interface circuits

• Circuit driver.

DESCRIPTION

NPN resistor-equipped double transistor in an SC-74
(SOT457) plastic package.

MARKING

TYPE NUMBER MARKING CODE

PIMH9 H9

QUICK REFERENCE DATA

V
I
R1 bias resistor 10 kΩ
R2 bias resistor 47 kΩ

handbook, halfpage

PIMH9

SYMBOL PARAMETER MAX. UNIT

CEO

CM

Top view

Fig.1 Simplified outline (SC-74; SOT457) and

collector-emitter voltage 50 V
peak collector current 100 mA

654

4

56

R1 R2

TR1

R2

132

123

symbol.

TR2

R1

MAM449

PINNING

PIN DESCRIPTION

1, 4 emitter TR1; TR2
2, 5 base TR1; TR2
6, 3 collector TR1; TR2

2, 5

1, 4

MBK120

6, 3

Fig.2 Equivalent inverter symbol.

2001 Sep 13 2

Philips Semiconductors Product specification

NPN resistor-equipped double transistor;

PIMH9

R1=10kΩ, R2 = 47 kΩ

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per transistor

V

CBO

V

CEO

V

EBO

V

I

I

O

I

CM

P

tot

T

stg

T

j

T

amb

Per device

P

tot

collector-base voltage open emitter − 50 V
collector-emitter voltage open base − 50 V
emitter-base voltage open collector − 10 V
input voltage

positive − +40 V

negative −−10 V
output current (DC) − 100 mA
peak collector current − 100 mA
total power dissipation T

≤ 25 °C; note 1 − 300 mW

amb

storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C

total power dissipation T

≤ 25 °C; note 1 − 600 mW

amb

Note

1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

thermal resistance from junction to ambient note 1 208 K/W

Note

1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm

2

.

2001 Sep 13 3