Philips PHX3055E Datasheet
Philips Semiconductors Product specification
N-channel TrenchMOS transistor PHX3055E
FEATURES SYMBOL QUICK REFERENCE DATA
• ’Trench’ technology
d
• Low on-state resistance V
• Fast switching
• Isolated mounting tab I
g
R
s
≤ 150 mΩ (VGS = 10 V)
DS(ON)
GENERAL DESCRIPTION PINNING SOT186A
N-channel enhancement mode, PIN DESCRIPTION
field-effect power transistor in a
plastic envelope with an electrically 1 gate
isolated mounting tab. The device
uses’trench’technologytoachieve 2 drain
low on-state resistance.
3 source
Applications:-
• d.c. to d.c. converters tab isolated
• switched mode power supplies
The PHX3055E is supplied in the
SOT186A (isolated TO220AB) conventional leaded package.
= 55 V
DSS
= 9 A
D
case
123
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DSS
V
DGR
V
GS
I
D
Drain-source voltage Tj = 25 ˚C to 150˚C - 55 V
Drain-gate voltage Tj = 25 ˚C to 150˚C; RGS = 20 kΩ -55V
Gate-source voltage - ± 20 V
Continuous drain current Ths = 25 ˚C - 9 A
Ths = 100 ˚C - 5.6 A
I
DM
P
D
Tj, T
Pulsed drain current Ths = 25 ˚C - 36 A
Total power dissipation Ths = 25 ˚C - 21 W
Operating junction and - 55 150 ˚C
stg
storage temperature
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - 2500 V
three terminals to external waveform;
heatsink R.H. ≤ 65% ; clean and dustfree
Capacitance from T2 to external f = 1 MHz - 10 - pF
heatsink
August 1999 1 Rev 1.000
Philips Semiconductors Product specification
N-channel TrenchMOS transistor PHX3055E
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
E
AS
I
AS
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-hs
R
th j-a
Non-repetitive avalanche Unclamped inductive load, IAS = 3.3 A; - 25 mJ
energy tp = 220 µs; Tj prior to avalanche = 25˚C;
VDD ≤ 25 V; RGS = 50 Ω; VGS = 10 V; refer
to fig:15
Peak non-repetitive - 9 A
avalanche current
Thermal resistance junction - 6 K/W
to heatsink
Thermal resistance junction 55 - K/W
to ambient
ELECTRICAL CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
V
GS(TO)
R
DS(ON)
g
fs
I
GSS
I
DSS
Q
g(tot)
Q
gs
Q
gd
t
d on
t
r
t
d off
t
f
L
d
L
s
C
iss
C
oss
C
rss
Drain-source breakdown VGS = 0 V; ID = 0.25 mA; 55 - - V
voltage Tj = -55˚C 50 - - V
Gate threshold voltage VDS = VGS; ID = 1 mA 2.0 3.0 4.0 V
Tj = 150˚C 1.1 - - V
Tj = -55˚C - - 6 V
Drain-source on-state VGS = 10 V; ID = 5.5 A - 120 150 mΩ
resistance Tj = 150˚C - 210 263 mΩ
Forward transconductance VDS = 25 V; ID = 5.5 A 1.5 3.2 - S
Gate source leakage current VGS = ±10 V; VDS = 0 V - 10 100 nA
Zero gate voltage drain VDS = 55 V; VGS = 0 V; - 0.05 10 µA
current Tj = 150˚C - - 100 µA
Total gate charge ID = 10 A; V
= 44 V; VGS = 10 V - 5.8 - nC
DD
Gate-source charge - 1.5 - nC
Gate-drain (Miller) charge - 3.2 - nC
Turn-on delay time VDD = 30 V; RD = 2.7 Ω;-310ns
Turn-on rise time RG = 5.6 Ω; VGS = 10 V - 26 35 ns
Turn-off delay time Resistive load - 8 15 ns
Turn-off fall time - 10 20 ns
Internal drain inductance Measured from drain lead to centre of die - 4.5 - nH
Internal source inductance Measured from source lead to source - 7.5 - nH
bond pad
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 190 250 pF
Output capacitance - 55 80 pF
Feedback capacitance - 40 50 pF
August 1999 2 Rev 1.000
Philips Semiconductors Product specification
N-channel TrenchMOS transistor PHX3055E
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous source current - - 9 A
(body diode)
Pulsed source current (body - - 36 A
diode)
Diode forward voltage IF = 10 A; VGS = 0 V - 1.1 1.5 V
Reverse recovery time IF = 10 A; -dIF/dt = 100 A/µs; - 32 - ns
Reverse recovery charge VGS = 0 V; VR = 30 V - 50 - nC
August 1999 3 Rev 1.000
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