Philips PHX2N60E Datasheet
Philips Semiconductors Product specification
PowerMOS transistors PHX2N60E
Avalanche energy rated
FEATURES SYMBOL QUICK REFERENCE DATA
• Repetitive Avalanche Rated
• Fast switching V
d
= 600 V
DSS
• Stable off-state characteristics
• High thermal cycling performance I
• Isolated package
g
s
= 1.3 A
D
R
DS(ON)
≤ 6 Ω
GENERAL DESCRIPTION PINNING SOT186A
N-channel, enhancement mode PIN DESCRIPTION
field-effect power transistor,
intendedforuse in off-line switched 1 gate
mode power supplies, T.V. and
computer monitor power supplies, 2 drain
d.c.tod.c.converters,motorcontrol
circuits and general purpose 3 source
switching applications.
case isolated
The PHX2N60E is supplied in the
SOT186A full pack, isolated
package.
case
123
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DSS
V
DGR
V
GS
I
D
I
DM
P
D
Tj, T
Drain-source voltage Tj = 25 ˚C to 150˚C - 600 V
Drain-gate voltage Tj = 25 ˚C to 150˚C; RGS = 20 kΩ - 600 V
Gate-source voltage - ± 30 V
Continuous drain current Ths = 25 ˚C; VGS = 10 V - 1.3 A
Ths = 100 ˚C; VGS = 10 V - 0.83 A
Pulsed drain current Ths = 25 ˚C - 7.6 A
Total dissipation Ths = 25 ˚C - 25 W
Operating junction and - 55 150 ˚C
stg
storage temperature range
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
E
AS
E
AR
IAS, I
1 pulse width and repetition rate limited by Tj max.
December 1998 1 Rev 1.200
Non-repetitive avalanche Unclamped inductive load, IAS = 1.3 A; - 102 mJ
energy tp = 0.2 ms; Tj prior to avalanche = 25˚C;
VDD ≤ 50 V; RGS = 50 Ω; VGS = 10 V; refer
to fig:17
Repetitive avalanche energy1IAR = 1.9 A; tp = 2.5 µs; Tj prior to - 3.7 mJ
avalanche = 25˚C; RGS = 50 Ω; VGS = 10 V;
refer to fig:18
Repetitive and non-repetitive - 1.9 A
AR
avalanche current
Philips Semiconductors Product specification
PowerMOS transistors PHX2N60E
Avalanche energy rated
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-hs
R
th j-a
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
∆V
(BR)DSS
∆T
j
R
DS(ON)
V
GS(TO)
g
fs
I
DSS
I
GSS
Q
g(tot)
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
d
L
s
C
iss
C
oss
C
rss
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - 2500 V
three terminals to external waveform;
heatsink R.H. ≤ 65% ; clean and dustfree
Capacitance from T2 to external f = 1 MHz - 10 - pF
heatsink
Thermal resistance junction with heatsink compound - - 5 K/W
to heatsink
Thermal resistance junction - 55 - K/W
to ambient
Drain-source breakdown VGS = 0 V; ID = 0.25 mA 600 - - V
voltage
/ Drain-source breakdown VDS = VGS; ID = 0.25 mA - 0.1 - %/K
voltage temperature
coefficient
Drain-source on resistance VGS = 10 V; ID = 1 A - 4.6 6 Ω
Gate threshold voltage VDS = VGS; ID = 0.25 mA 2.0 3.0 4.0 V
Forward transconductance VDS = 30 V; ID = 1 A 0.5 1.4 - S
Drain-source leakage current VDS = 600 V; VGS = 0 V - 1 100 µA
VDS = 480 V; VGS = 0 V; Tj = 125 ˚C - 50 500 µA
Gate-source leakage current VGS = ±30 V; VDS = 0 V - 10 200 nA
Total gate charge ID = 2 A; V
Gate-source charge - 2 3 nC
= 480 V; VGS = 10 V - 20 25 nC
DD
Gate-drain (Miller) charge - 9 15 nC
Turn-on delay time VDD = 300 V; RD = 150 Ω; - 10 - ns
Turn-on rise time RG = 24 Ω -20-ns
Turn-off delay time - 60 - ns
Turn-off fall time - 20 - ns
Internal drain inductance Measured from drain lead to centre of die - 4.5 - nH
Internal source inductance Measured from source lead to source - 7.5 - nH
bond pad
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 236 - pF
Output capacitance - 34 - pF
Feedback capacitance - 20 - pF
December 1998 2 Rev 1.200
Philips Semiconductors Product specification
PowerMOS transistors PHX2N60E
Avalanche energy rated
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
S
I
SM
V
SD
t
rr
Q
rr
Continuous source current Ths = 25˚C - - 1.9 A
(body diode)
Pulsed source current (body Ths = 25˚C - - 7.6 A
diode)
Diode forward voltage IS = 2 A; VGS = 0 V - - 1.2 V
Reverse recovery time IS = 2 A; VGS = 0 V; dI/dt = 100 A/µs - 360 - ns
Reverse recovery charge - 2.4 - µC
PD%
120
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
Normalised Power Derating
with heatsink compound
Ths / C
Fig.1. Normalised power dissipation.
PD% = 100⋅PD/P
ID%
120
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140
with heatsink compound
Ths / C
= f(Ths)
D 25 ˚C
Normalised Current Derating
Fig.2. Normalised continuous drain current.
ID% = 100⋅ID/I
= f(Ths); conditions: VGS ≥ 10 V
D 25 ˚C
Drain current, ID (Amps)
10
RDS(ON) = VDS/ID
1
DC
0.1
0.01
10 100 1000
Drain-source voltage, VDS (Volts)
PHX1N60A
tp =
10 us
100us
1ms
10ms
100ms
Fig.3. Safe operating area. Ths = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter t
Zth j-hs / (K/W)
1E+01
0.5
1E+00
1E-01
1E-02
0.2
0.1
0.05
0.02
P
D
0
1E-07 1E-05 1E-03 1E-01 1E+01
t / s
ZTHX43
p
p
t
t
D =
T
t
T
Fig.4. Transient thermal impedance.
Z
= f(t); parameter D = tp/T
th j-hs
p
December 1998 3 Rev 1.200
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