Philips PHX1N60E Datasheet
Philips Semiconductors Objective Specification
PowerMOS transistor PHX1N60E
Isolated version of PHP1N60E
GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a full pack,plastic envelope featuring high V avalanche energy capability, stable I blocking voltage, fast switching and P high thermal cycling performance R withlowthermalresistance.Intended
DS
D
tot
DS(ON)
for use in Switched Mode Power
Supplies (SMPS), motor control
circuits and general purpose
switching applications.
PINNING - SOT186A PIN CONFIGURATION SYMBOL
Drain-source voltage 600 V
Drain current (DC) 1.3 A
Total power dissipation 25 W
Drain-source on-state resistance 6 Ω
PIN DESCRIPTION
case
d
1 gate
2 drain
3 source
case isolated
123
g
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
±V
I
D
I
DM
I
DR
I
DRM
P
T
T
DS
DGR
GS
tot
stg
j
Drain-source voltage - 600 V
Drain-gate voltage RGS = 20 kΩ - 600 V
Gate-source voltage - 30 V
Drain current (DC) Ths = 25 ˚C - 1.3 A
Ths = 100 ˚C - 0.83 A
Drain current (pulse peak Ths = 25 ˚C - 5.2 A
value)
Source-drain diode current Ths = 25 ˚C - 1.3 A
(DC)
Source-drain diode current Ths = 25 ˚C - 5.2 A
(pulse peak value)
Total power dissipation Ths = 25 ˚C - 25 W
Storage temperature -55 150 ˚C
Junction temperature - 150 ˚C
AVALANCHE LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
W
DSS
W
DSR
1. Pulse width and frequency limited by T
November 1996 1 Rev 1.000
Drain-source non-repetitive ID = 1.9 A; VDD ≤ 50 V; VGS = 10 V;
unclamped inductive turn-off RGS = 50 Ω
energy Tj = 25˚C prior to surge - 120 mJ
1
Drain-source repetitive ID = 1.9 A; VDD ≤ 50 V; VGS = 10 V; - 3.6 mJ
Tj = 100˚C prior to surge - 20 mJ
unclamped inductive turn-off RGS = 50 Ω; Tj ≤ 150 ˚C
energy
j(max)
Philips Semiconductors Objective specification
PowerMOS transistor PHX1N60E
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-hs
R
th j-a
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
V
GS(TO)
I
DSS
I
GSS
R
DS(ON)
V
SD
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - 2500 V
three terminals to external waveform;
heatsink R.H. ≤ 65% ; clean and dustfree
Capacitance from T2 to external f = 1 MHz - 10 - pF
heatsink
Thermal resistance junction to with heatsink compound - - 5 K/W
heatsink
Thermal resistance junction to - 55 - K/W
ambient
Drain-source breakdown VGS = 0 V; ID = 0.25 mA 600 - - V
voltage
Gate threshold voltage VDS = VGS; ID = 0.25 mA 2.0 3.0 4.0 V
Drain-source leakage current VDS = 600 V; VGS = 0 V; Tj = 25 ˚C - 10 100 µA
VDS = 480 V; VGS = 0 V; Tj = 125 ˚C - 0.1 1.0 mA
Gate-source leakage current VGS = ±30 V; VDS = 0 V - 10 100 nA
Drain-source on-state VGS = 10 V; ID = 0.9 A - 5.3 6 Ω
resistance
Source-drain diode forward IF = 1.9 A ;VGS = 0 V - 1.1 1.4 V
voltage
November 1996 2 Rev 1.000
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