Philips PHX1N40 Datasheet

Philips Semiconductors Product specification

PowerMOS transistor PHX1N40

GENERAL DESCRIPTION QUICK REFERENCE DATA

N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
field-effect power transistor in a full
pack plastic envelope featuring high V
avalanche energy capability, stable I
off-state characteristics, fast P
switching and high thermal cycling R
performance with low thermal

DS

D

tot

DS(ON)

resistance. Intended for use in
Switched Mode Power Supplies
(SMPS), motor control circuits and
general purpose switching
applications.

PINNING - SOT186A PIN CONFIGURATION SYMBOL

Drain-source voltage 400 V
Drain current (DC) 1.7 A
Total power dissipation 25 W
Drain-source on-state resistance 3.5 Ω

PIN DESCRIPTION

case

d

1 gate
2 drain
3 source

case isolated

123

g

s

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

I

D

I

DM

P

D

∆PD/∆TmbLinear derating factor Ths > 25 ˚C - 0.2 W/K
V

GS

E

AS

I

AS

Tj, T

Continuous drain current Ths = 25 ˚C; VGS = 10 V - 1.7 A

Ths = 100 ˚C; VGS = 10 V - 1.1 A
Pulsed drain current Ths = 25 ˚C - 7 A
Total dissipation Ths = 25 ˚C - 25 W

Gate-source voltage - ± 30 V
Single pulse avalanche VDD ≤ 50 V; starting Tj = 25˚C; RGS = 50 Ω; - 100 mJ
energy VGS = 10 V
Peak avalanche current VDD ≤ 50 V; starting Tj = 25˚C; RGS = 50 Ω; - 2.5 A

VGS = 10 V
Operating junction and - 55 150 ˚C

stg

storage temperature range

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

isol

C

isol

June 1997 1 Rev 1.000

R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - 2500 V
three terminals to external waveform;
heatsink R.H. ≤ 65% ; clean and dustfree

Capacitance from T2 to external f = 1 MHz - 10 - pF
heatsink

Philips Semiconductors Product specification

PowerMOS transistor PHX1N40

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

R

th j-hs

R

th j-a

ELECTRICAL CHARACTERISTICS

Tj = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

∆V

(BR)DSS

∆T

j

R

DS(ON)

V

GS(TO)

g

fs

I

DSS

I

GSS

Q

g(tot)

Q

gs

Q

gd

t

d(on)

t

r

t

d(off)

t

f

L

d

L

s

C

iss

C

oss

C

rss

Thermal resistance junction to with heatsink compound - - 5 K/W
heatsink
Thermal resistance junction to - 55 - K/W
ambient

Drain-source breakdown VGS = 0 V; ID = 0.25 mA 400 - - V
voltage

/ Drain-source breakdown VDS = VGS; ID = 0.25 mA - 0.45 - V/K

voltage temperature coefficient
Drain-source on resistance VGS = 10 V; ID = 1.25 A - 2.0 3.5 Ω
Gate threshold voltage VDS = VGS; ID = 0.25 mA 2.0 3.0 4.0 V
Forward transconductance VDS = 30 V; ID = 1.25 A 0.5 1.5 - S
Drain-source leakage current VDS = 400 V; VGS = 0 V - 1 25 µA

VDS = 320 V; VGS = 0 V; Tj = 125 ˚C - 30 250 µA

Gate-source leakage current VGS = ±30 V; VDS = 0 V - 10 200 nA
Total gate charge ID = 2.5 A; V

= 320 V; VGS = 10 V - 20 25 nC

DD

Gate-source charge - 2 3 nC
Gate-drain (Miller) charge - 8 12 nC

Turn-on delay time VDD = 200 V; ID = 2.5 A; - 10 - ns
Turn-on rise time RG = 24 Ω; RD = 78 Ω -25-ns
Turn-off delay time - 46 - ns
Turn-off fall time - 25 - ns

Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH

from package to centre of die

Internal source inductance Measured from source lead 6 mm - 7.5 - nH

from package to source bond pad

Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 240 - pF
Output capacitance - 44 - pF
Feedback capacitance - 26 - pF

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS

Tj = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

S

I

SM

V

SD

t

rr

Q

rr

June 1997 2 Rev 1.000

Continuous source current Ths = 25˚C - - 2.5 A
(body diode)
Pulsed source current (body Ths = 25˚C - - 10 A
diode)
Diode forward voltage IS = 2.5 A; VGS = 0 V - - 1.2 V

Reverse recovery time IS = 2.5 A; VGS = 0 V; - 200 - ns

dI/dt = 100 A/µs

Reverse recovery charge - 2.0 - µC

Philips Semiconductors Product specification

PowerMOS transistor PHX1N40

PD%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140

Normalised Power Derating

with heatsink compound

Ths / C

Fig.1. Normalised power dissipation.

PD% = 100⋅PD/P

ID%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140

with heatsink compound

Ths / C

= f(Ths)

D 25 ˚C

Normalised Current Derating

Fig.2. Normalised continuous drain current.

ID% = 100⋅ID/I

= f(Ths); conditions: VGS ≥ 10 V

D 25 ˚C

1E+01

Zth j-hs / (K/W)

ZTHX43

0.5

1E+00

0.2

0.1

0.05

1E-01

1E-02

0.02

p

t

p

P

D

0

1E-07 1E-05 1E-03 1E-01 1E+01

t / s

t

D =

T

t

T

Fig.4. Transient thermal impedance.

Z

= f(t); parameter D = tp/T

th j-hs

ID, Drain current (Amps)

8

Tj = 25 C

7
6
5
4
3
2
1
0

0 5 10 15 20 25 30

VDS, Drain-Source voltage (Volts)

PHP2N40

VGS = 4.5 V

Fig.5. Typical output characteristics

ID = f(VDS); parameter V

GS

20 V

10 V

7 V

6.5 V
6 V

5.5 V
5 V

.

Drain current, ID (Amps)

10

RDS(ON) = VDS/ID

1

DC

0.1

0.01
10 100 1000

Drain-source voltage, VDS (Volts)

PHX1N40

tp =
10 us

100us

1ms
10ms

100ms

Fig.3. Safe operating area. Ths = 25 ˚C

ID & IDM = f(VDS); IDM single pulse; parameter t

Drain-Source on resistance, RDS(ON) (Ohms)

6

5

4

3

2

1

0

012345678

6 V5.5 V5V

6.5 V

7 V

Drain current, ID (Amps)

10 V

Fig.6. Typical on-state resistance

R

p

= f(ID); parameter V

DS(ON)

PHP2N40

Tj = 25 C

VGS = 20 V

.

GS

June 1997 3 Rev 1.000