Philips php29n08t_phb29n08t-01 Datasheet

1. Description

2. Features

3. Applications

PHP/PHB29N08T

TrenchMOS™ standard level FET

Rev. 01 — 29 May 2002 Product data

N-channel standard level ﬁeld-effect power transistor in a plastic package using TrenchMOS™ technology.

Product availability:

PHP29N08T in SOT78 (TO-220AB) PHB29N08T in SOT404 (D2-PAK).

■ High noise immunity

■ Low on-state resistance.

■ Industrial motor control.

4. Pinning information

Table 1: Pinning - SOT78, SOT404 simpliﬁed outline and symbol

Pin Description Simpliﬁed outline Symbol

1 gate (g) 2 drain (d) 3 source (s) mb mounting base,

connected to drain (d)

[1] It is not possible to make connection to pin 2 of the SOT404 package.

[1]

MBK106

12mb3

SOT78 (TO-220AB) SOT404 (D2-PAK)

mb

2

13

MBK116

MBB076

d

g

s

Philips Semiconductors

PHP/PHB29N08T

TrenchMOS™ standard level FET

5. Quick reference data

Table 2: Quick reference data

Symbol Parameter Conditions Typ Max Unit

V I

D

P T R

DS

tot j DSon

drain-source voltage (DC) 25 °C ≤ Tj≤ 175 °C - 75 V drain current (DC) Tmb=25°C; VGS=11V - 27 A total power dissipation Tmb=25°C - 88 W junction temperature - 175 °C drain-source on-state resistance VGS= 11 V; ID=14A

=25°C 4050mΩ

T

j

= 175 °C 96 120 mΩ

T

j

6. Limiting values

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DS

V

DGR

V

GS

I

D

I

DM

P

tot

T

stg

T

j

Source-drain diode

I

S

I

SM

drain-source voltage (DC) 25 °C ≤ Tj≤ 175 °C - 75 V drain-gate voltage (DC) 25 °C ≤ Tj≤ 175 °C; RGS=20kΩ -75V gate-source voltage - ±30 V drain current (DC) Tmb=25°C; VGS=11V;Figure 2 and 3 -27A

= 100 °C; VGS=11V;Figure 2 - 19.2 A

T

mb

peak drain current Tmb=25°C; pulsed; tp≤ 10 µs; Figure 3 - 108 A total power dissipation Tmb=25°C; Figure 1 -88W storage temperature −55 +175 °C junction temperature −55 +175 °C

source (diode forward) current (DC) Tmb=25°C - 27 A peak source (diode forward) current Tmb=25°C; pulsed; tp≤ 10 µs - 108 A

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Product data Rev. 01 — 29 May 2002 2 of 13

Philips Semiconductors

03aa16

0

40

80

120

0 50 100 150 200

Tmb (°C)

P

der

(%)

PHP/PHB29N08T

TrenchMOS™ standard level FET

P

der

tot

----------------------

P

tot 25 C°()

100%×= I

Fig 1. Normalized total power dissipation as a

function of mounting base temperature.

3

10

120

I

der

(%)

80

40

0

0 50 100 150 200

I

D

der

------------------ -

I

D25C°()

100%×=

03aa24

Tmb (°C)

Fig 2. Normalized continuous drain current as a

function of mounting base temperature.

03aj06

I

D

(A)

2

10

1

1 10 10

Limit R

DSon

= V

DS

/ I

D

tp = 10 µs

100 µs

DC

1 ms

2

VDS (V)

10

3

Tmb=25°C; IDM is single pulse; VGS = 11V.

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.

9397 750 09651

Product data Rev. 01 — 29 May 2002 3 of 13

Philips Semiconductors

PHP/PHB29N08T

TrenchMOS™ standard level FET

7. Thermal characteristics

Table 4: Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

R

th(j-mb)

R

th(j-a)

thermal resistance from junction to mounting base Figure 4 - - 1.7 K/W thermal resistance from junction to ambient SOT78 package; vertical in still air - 60 - K/W

SOT404 package;

- 50 - K/W SOT404 minimum footprint; mounted on a PCB

7.1 Transient thermal impedance

p

03aj05

δ =

T

tp (s)

10

Z

th(j-mb)

(K/W)

1

10

δ = 0.5

0.2

0.1

0.05

-1

0.02 single pulse

-2 10

-5

10

-4

10

-3

10

P

t

-2

Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.

t

p

T

t

-1

10

9397 750 09651

Product data Rev. 01 — 29 May 2002 4 of 13

Philips Semiconductors

PHP/PHB29N08T

TrenchMOS™ standard level FET

8. Characteristics

Table 5: Characteristics

Tj=25°C unless otherwise speciﬁed

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V

(BR)DSS

V

GS(th)

I

DSS

I

GSS

R

DSon

Dynamic characteristics

Q

g(tot)

Q

gs

Q

gd

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Source-drain diode

V

SD

t

rr

Q

r

drain-source breakdown voltage ID= 0.25 mA; VGS=0V

=25°C 75--V

T

j

= −55 °C 70--V

T

j

gate-source threshold voltage ID= 2 mA; VDS=VGS; Figure 9

=25°C 345V

T

j

= 175 °C 2.1 - - V

T

j

= −55 °C - - 5.4 V

T

j

drain-source leakage current VDS=75V; VGS=0V

=25°C - 0.05 10 µA

T

j

= 175 °C - - 500 µA

T

j

gate-source leakage current VGS= ±20 V; VDS= 0 V - 10 100 nA drain-source on-state resistance VGS= 11 V; ID=14A;Figure 7 and 8

=25°C - 40 50 mΩ

T

j

= 175 °C - 96 120 mΩ

T

j

total gate charge ID=29A;VDD=60V;VGS=10V;Figure 13 -19-nC gate-source charge - 6 - nC gate-drain (Miller) charge - 9 - nC input capacitance VGS=0V; VDS= 25 V; f = 1 MHz; Figure 11 - 810 - pF output capacitance - 140 - pF reverse transfer capacitance - 85 - pF turn-on delay time VDD= 37.5 V; ID=29A;

=10V;RG= 5.6 Ω

V

rise time -70-ns

GS

- 9.5 - ns

turn-off delay time - 15 - ns fall time -9-ns

source-drain (diode forward) voltage IS= 14 A; VGS=0V;Figure 12 - 0.95 1.2 V reverse recovery time IS= 14 A; dIS/dt = −100 A/µs; VGS=0V - 50 - ns recovered charge 65 - nC

9397 750 09651

Product data Rev. 01 — 29 May 2002 5 of 13

Philips Semiconductors

PHP/PHB29N08T

TrenchMOS™ standard level FET

VGS = 6 V

VDS (V)

7.5 V

03aj07

8 V9 V

7.5 V

6.5 V

03aj08

7 V

30

VDS > ID x R

I

D

(A)

20

10

0

0246810

=25°C and 175 °C; VDS> IDxR

j

DSon

175 °C

Tj = 25 °C

Fig 6. Transfer characteristics: drain current as a

function of gate-source voltage; typical values.

3

a

30

Tj = 25 °C

I

D

(A)

20

10

0

0 0.5 1 1.5 2

11 V

Tj=25°CT

Fig 5. Output characteristics: drain current as a

function of drain-source voltage; typical values.

80

R

(mΩ)

DSon

VGS = 7 VTj = 25 °C

03aj09

VGS (V)

DSon

03ac63

60

40

20

0 102030

8 V

9 V

11 V

ID (A)

Tj=25°C

Fig 7. Drain-source on-state resistance as a function

of drain current; typical values.

2

1

0

-60 0 60 120 180

R

DSon

a

=

----------------------------

R

DSon 25 C°()

Tj (

o

C)

Fig 8. Normalized drain-source on-state resistance

factor as a function of junction temperature.

9397 750 09651

Product data Rev. 01 — 29 May 2002 6 of 13

Philips Semiconductors

PHP/PHB29N08T

TrenchMOS™ standard level FET

6.4

V

GS(th)

(V)

4.8

3.2

1.6

0

-60 0 60 120 180

ID= 2mA; VDS=V

max

typ

min

GS

03aj14

Tj (°C)

Fig 9. Gate-source threshold voltage as a function of

junction temperature.

4

10

C

(pF)

-2

10

I

D

(A)

-3

10

min

-4

10

-5

10

-6

10

23456

typ max

03aj13

VGS (V)

Tj=25°C; VDS=10V

Fig 10. Sub-threshold drain current as a function of

gate-source voltage.

03aj11

3

10

2

-1

10

1 10 10

C

C C

VDS (V)

iss

oss rss

2

VGS=0V;f=1MHz

Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.

9397 750 09651

Product data Rev. 01 — 29 May 2002 7 of 13

Philips Semiconductors

PHP/PHB29N08T

TrenchMOS™ standard level FET

Tj = 25 °C175 °C

VSD (V)

03aj10

15

ID = 29 A

V

GS

T

= 25 °C

j

(V)

10

5

0

0102030

VDD = 15 V

30

VGS = 0 V

I

S

(A)

20

10

0

0 0.3 0.6 0.9 1.2

Tj=25°C and 175 °C; VGS=0V ID= 29 A; VDD= 15 V, 37.5 V, 60 V

Fig 12. Source (diode forward) current as a function of

source-drain (diode forward) voltage; typical

Fig 13. Gate-source voltage as a function of gate

charge; typical values.

values.

03aj12

60 V

37.5 V

QG (nC)

9397 750 09651

Product data Rev. 01 — 29 May 2002 8 of 13

Philips Semiconductors

PHP/PHB29N08T

TrenchMOS™ standard level FET

9. Package outline

Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78

AE

p

A

1

q

D

1

D

(1)

L

1

b

L

1

L

2

mounting

base

Q

123

b

e

0 5 10 mm

scale

c

DIMENSIONS (mm are the original dimensions)

L

(1)

b

A

4.5

4.1

A

1.39

1.27

1

UNIT

mm

Note

1. Terminals in this zone are not tinned.

OUTLINE VERSION

SOT78 SC-463-lead TO-220AB

b

c

1

1.3

1.0

0.7

0.4

0.9

0.7

IEC JEDEC EIAJ

D

15.8

6.4

15.2

5.9

REFERENCES

e

E

1

10.3

9.7

2.54

L

15.0

13.5

L

3.30

2.79

2

1

max.

3.0

qQ

p

3.8

3.0

3.6

2.7

EUROPEAN

PROJECTION

2.6

2.2

ISSUE DATE

00-09-07 01-02-16

Fig 14. SOT78 (TO-220AB).

9397 750 09651

Product data Rev. 01 — 29 May 2002 9 of 13

Philips Semiconductors

PHP/PHB29N08T

TrenchMOS™ standard level FET

Plastic single-ended surface mounted package (Philips version of D2-PAK); 3 leads (one lead cropped)

A

E

D

1

D

H

D

mounting

base

2

A

1

SOT404

13

e e

DIMENSIONS (mm are the original dimensions)

0.64

0.46

D

max.

11

UNIT

mm

A

4.50

4.10

OUTLINE VERSION

SOT404

A

1.40

1.27

b

1

0.85

0.60

IEC JEDEC EIAJ

D

1

1.60

10.30

1.20

9.70

REFERENCES

b

0 2.5 5 mm

scale

E

eLpH

2.90

2.54

2.10

D

15.80

14.80

Qc

2.60

2.20

L

p

c

Q

EUROPEAN

PROJECTION

ISSUE DATE

99-06-25 01-02-12

Fig 15. SOT404 (D2-PAK)

9397 750 09651

Product data Rev. 01 — 29 May 2002 10 of 13

Philips Semiconductors

10. Revision history

Table 6: Revision history

Rev Date CPCN Description

01 20020529 - Product data; (9397 750 09651)

PHP/PHB29N08T

TrenchMOS™ standard level FET

9397 750 09651

Product data Rev. 01 — 29 May 2002 11 of 13

Philips Semiconductors

11. Data sheet status

PHP/PHB29N08T

TrenchMOS™ standard level FET

Data sheet status

Objective data Development This data sheetcontainsdata from the objective speciﬁcation for product development.Philips Semiconductors

Preliminary data Qualiﬁcation This data sheet contains data from the preliminary speciﬁcation. Supplementary data will be published at a

Product data Production This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the right to

[1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[1]

Product status

12. Deﬁnitions

Short-form speciﬁcation — The data in a short-form speciﬁcation is

extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.

Limiting values deﬁnition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the speciﬁed use without further testing or modiﬁcation.

[2]

Deﬁnition

reserves the right to change the speciﬁcation in any manner without notice.

later date. Philips Semiconductors reserves the right to change the speciﬁcation without notice, in order to improve the design and supply the best possible product.

make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notiﬁcation (CPCN) procedure SNW-SQ-650A.

13. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise speciﬁed.

14. Trademarks

TrenchMos —is a trademark of Koninklijke Philips Electronics N.V.

Contact information

For additional information, please visit http://www.semiconductors.philips.com. For sales ofﬁce addresses, send e-mail to: [email protected]. Fax: +31 40 27 24825

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Product data Rev. 01 — 29 May 2002 12 of 13

Philips Semiconductors

Contents

1 Description. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

4 Pinning information. . . . . . . . . . . . . . . . . . . . . . 1

5 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2

6 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

7 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

7.1 Transient thermal impedance . . . . . . . . . . . . . . 4

8 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11

11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12

12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

13 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

PHP/PHB29N08T

TrenchMOS™ standard level FET

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

Date of release: 29 May 2002 Document order number: 9397 750 09651