Philips php28nq15t Datasheet

Page 1

1. Product profile

1.1 General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

1.2 Features and benefits

PHP28NQ15T

N-channel TrenchMOS standard level FET

Rev. 02 — 22 March 2010 Product data sheet

 Increased efficiency during switching

due to low body diode recovered charge

 Suitable for high frequency

applications due to fast switching characteristics

1.3 Applications

 Class-D audio amplifiers  DC-to-AC inverters

 DC-to-DC convertors  Switched-mode power supplies

1.4 Quick reference data

Table 1. Quick reference

Symbol Parameter Conditions Min Typ Max Unit

tot

Dynamic characteristics

Static characteristics

DSon

drain-source voltage Tj≥ 25 °C; Tj≤ 175 °C - - 150 V drain current Tj=25°C; VGS=10V;

see Figure 1 and 3

total power dissipation

gate-drain charge VGS=10V; ID=10A;

drain-source on-state resistance

Tmb= 25 °C; see Figure 2 - - 150 W

=75V; Tj=25°C;

see Figure 12 and 11

VGS=10V; ID=18A;

= 25 °C; see Figure 9 and 10

- - 28.5 A

-7.5-nC

- 5465mΩ

Page 2

NXP Semiconductors

2. Pinning information

PHP28NQ15T

N-channel TrenchMOS standard level FET

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1G gate 2D drain 3S source

mb D mounting base; connected to

drain

12mb3

bb076

SOT78 (TO-220AB)

3. Ordering information

Table 3. Ordering information

Type number Package

PHP28NQ15T TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead

Name Description Version

TO-220AB

SOT78

4. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

DGR

tot

stg

Source-drain diode

Avalanche ruggedness

DS(AL)S

drain-source voltage Tj≥ 25 °C; Tj≤ 175 °C - 150 V drain-gate voltage Tj≥ 25 °C; Tj≤ 175 °C; RGS=20kΩ -150V gate-source voltage -20 20 V drain current VGS=10V; Tj=25°C; see Figure 1 and 3 -28.5A

peak drain current tp≤ 10 µs; pulsed; Tmb=25°C; see Figure 3 -57.1A total power dissipation Tmb=25°C; see Figure 2 -150W storage temperature -55 175 °C junction temperature -55 175 °C

source current Tmb=25°C - 28.5 A peak source current tp≤ 10 µs; pulsed; Tmb=25°C - 57.1 A

non-repetitive drain-source avalanche energy

=10V; Tj= 100 °C; see Figure 1 -20.2A

VGS=10V; T

=25°C; ID=9.9A; V

j(init)

≤ 150 V;

sup

-100mJ

RGS=50Ω; tp= 0.1 ms; unclamped

Product data sheet Rev. 02 — 22 March 2010 2 of 13

Page 3

NXP Semiconductors

PHP28NQ15T

N-channel TrenchMOS standard level FET

120

der

(%)

0 20015050 100

03aa23

Tmb (°C)

Fig 1. Normalized continuous drain current as a

function of mounting base temperature

(A)

Limit R

DSon

= V

/ I

120

der

(%)

0 20015050 100

03aa16

Tmb (°C)

Fig 2. Normalized total power dissipation as a

function of mounting base temperature

003aab102

tp =

10 μs

-1

1 10 10

100 μs

1 ms

VDS (V)

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

Product data sheet Rev. 02 — 22 March 2010 3 of 13

Page 4

NXP Semiconductors

5. Thermal characteristics

PHP28NQ15T

N-channel TrenchMOS standard level FET

Table 5. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

th(j-mb)

thermal resistance from junction to

see Figure 4 --1K/W

mounting base

th(j-a)

thermal resistance from junction to

vertical in still air - 60 - K/W

ambient

tp (s)

003aab103

δ =

-1

th(j-mb)

(K/W)

0.5

δ =

0.2

0.1

-1

0.05

0.02

single pulse

-2

-5

-4

-3

-2

Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration

Product data sheet Rev. 02 — 22 March 2010 4 of 13

Page 5

NXP Semiconductors

6. Characteristics

PHP28NQ15T

N-channel TrenchMOS standard level FET

Table 6. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

(BR)DSS

GS(th)

drain-source breakdown voltage

gate-source threshold voltage

ID=250µA; VGS=0V; Tj=-55°C 135 - - V

=250µA; VGS=0V; Tj=25°C 150 - - V

ID=1mA; VDS = VGS; Tj= -55 °C; see Figure 7

--4.4V

and 8

=1mA; VDS = VGS; Tj=175°C; see Figure 7

1- -V

and 8 I

=1mA; VDS = VGS; Tj=25°C; see Figure 7

234V

and 8

DSS

GSS

DSon

drain leakage current VDS=120V; VGS=0V; Tj=25°C - - 1 µA

=120V; VGS=0V; Tj= 175 °C - - 500 µA

gate leakage current VGS=20V; VDS=0V; Tj= 25 °C - 10 100 nA

=-20V; VDS=0V; Tj= 25 °C - 10 100 nA

drain-source on-state resistance

VGS=10V; ID=18A; Tj= 175 °C; see Figure 9 and 10

=10V; ID=18A; Tj=25°C; see Figure 9

- 145 175 mΩ

-5465mΩ

and 10

internal gate resistance

f=1MHz; Tj=25°C - 1.1 - Ω

(AC)

Dynamic characteristi cs

Q Q V

C C C

G(tot)

GS GD

GS(pl)

iss oss rss

total gate charge ID=10A; VDS=75V; VGS=10V; Tj=25°C;

see Figure 11

and 12 gate-source charge ID=10A; VDS=75V; VGS=10V; Tj=25°C; gate-drain charge - 7.5 - nC gate-source plateau

voltage

see Figure 12 ID=25A; VDS=75V; Tj= 25 °C; see Figure 11

and 12

and 11

input capacitance VDS=30V; VGS= 0 V; f = 1 MHz; Tj=25°C; output capacitance - 185 - pF

see Figure 13

reverse transfer

-24-nC

-6-nC

-5-V

- 1250 - pF

-55-pF

capacitance

d(on)

d(off)

turn-on delay time VDS=75V; RL=3Ω; VGS=10V;

=5.6Ω; Tj=25°C

rise time - 20 - ns turn-off delay time VDS=75V; RL=3Ω; VGS=10V; R

G(ext)

=25°C

G(ext)

5.6 Ω;

fall time VDS=75V; RL=3Ω; VGS=10V;

=5.6Ω; Tj=25°C

G(ext)

-12-ns

-55-ns

Source-drain diode

source-drain voltage IS=25A; VGS=0V; Tj= 25 °C; see Figure 14 - 0.87 1.2 V reverse recovery time IS=20A; dIS/dt = -100 A/µs; VGS=0V; recovered charge - 170 - nC

VDS=25V; Tj=25°C

-110-ns

Product data sheet Rev. 02 — 22 March 2010 5 of 13

Page 6

NXP Semiconductors

PHP28NQ15T

N-channel TrenchMOS standard level FET

VGS (V) =

(A)

0123

10 6

4.8

003aab104

(V)

4.6

4.4

4.2

Fig 5. Output characteristics: drain current as a

function of drain-source voltage; typical values

03aa35

(A)

−1

−2

min typ max

(A)

Tj = 150 °C

012345

003aab106

25 °C

(V)

Fig 6. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

03aa32

GS(th)

(V)

max

−3

−4

−5

−6

0642

VGS (V)

Fig 7. Sub-threshold drain current as a function of

gate-source voltage

−60 180120060

typ

min

Tj (°C)

Fig 8. Gate-source threshold voltage as a function of

junction temperature

Product data sheet Rev. 02 — 22 March 2010 6 of 13

Page 7

NXP Semiconductors

003aaa508

PHP28NQ15T

N-channel TrenchMOS standard level FET

100

VGS (V) =

DSon

(mΩ)

0102030

4.2 4.64 4.4

003aab105

(A)

4.8

5 6

Fig 9. Drain-source on-state resistance as a function

of drain current; typical values

003aab107

VDD = 120 V

(V)

ID = 25 A

= 25 °C

75 V

30 V

−75 17512525 75−25

03al51

Tj (°C)

Fig 10. Normalized drain-source on-state resistance

factor as a function of junction temperature

GS(pl)

GS(th)

GS1QGS2

G(tot)

0102030

Fig 11. Gate-source voltage as a function of gate

(nC)

Fig 12. Gate charge waveform definitions

charge; typical values

Product data sheet Rev. 02 — 22 March 2010 7 of 13

Page 8

NXP Semiconductors

PHP28NQ15T

N-channel TrenchMOS standard level FET

(pF)

-1

1 10 10

003aab109

iss

oss

rss

VDS (V)

Fig 13. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical values

(A)

150 °C

0.2 0.4 0.6 0.8 1

003aab108

Tj = 25 °C

(V)

Fig 14. Source current as a function of source-drain

voltage; typical values

Product data sheet Rev. 02 — 22 March 2010 8 of 13

Page 9

NXP Semiconductors

PHP28NQ15T

N-channel TrenchMOS standard level FET

7. Package outline

lastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB

mounting

base

SOT7

(1)

(2)

(3×)

(2)

(2×)

123

DIMENSIONS (mm are the original dimensions)

(2)

1.6

1.0

(2)

c D

1.3

0.7

0.4

16.0

15.2

REFERENCES

1.0

3-lead TO-220AB

UNIT A

4.7

4.1

Notes

1. Lead shoulder designs may vary.

2. Dimension includes excess dambar.

OUTLINE VERSION

SOT78 SC-46

1.40

1.25

b b

0.9

0.6

IEC JEDEC JEITA

(1)

b(3×)

0 5 10 mm

scale

E e

6.6

5.9

10.3

9.7

2.54

15.0

12.8

L L

3.30

2.79

(1)

max.

3.0

p q

3.0

3.8

3.5

2.7

EUROPEAN

PROJECTION

2.6

2.2

ISSUE DATE

08-04-23 08-06-13

Fig 15. Package outline SOT78 (TO-220AB)

Product data sheet Rev. 02 — 22 March 2010 9 of 13

Page 10

NXP Semiconductors

8. Revision history

PHP28NQ15T

N-channel TrenchMOS standard level FET

Table 7. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PHP28NQ15T_2 20100322 Product data sheet - PHP28NQ15T_1 Modifications:

• The format of this data sheet has been redesigned to comply with the new identity

guidelines of NXP Semiconductors.

• Legal texts have been adapted to the new company name where appropriate.

PHP28NQ15T_1 20050817 Product data sheet - -

Product data sheet Rev. 02 — 22 March 2010 10 of 13

Page 11

NXP Semiconductors

PHP28NQ15T

N-channel TrenchMOS standard level FET

9. Legal information

9.1 Data sheet status

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The pr oduct status of device(s) described in this document may have changed since this document was pub lished and may differ in case of multiple devices. The latest product

status information is available on the Internet at URL http://www.nxp.com

[1][2]

Product status

[3]

Definition

9.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied u pon to co nt ain det ailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.

9.3 Disclaimers

Limited warranty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.

In no event shall NXP Semiconductors be lia ble for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semi conductors’ aggregat e and cumulative liabil ity towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonabl y be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

NXP Semiconductors does not accept any liability related to any default , damage, costs or problem which is based on a weakness or default in the customer application/use or the application/use of customer’s third party customer(s) (hereinafter both referred t o as “Application”). It is customer’s sole responsibility to check whether the NXP Semiconductors product is suitable and fit for the Application planned. Customer has to do all necessary testing for the Application in order to avoid a default of the Application and the product. NXP Semiconductors does not accept any liability in this respect.

Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteri stics sections of this document, and as such is not complete, exhaustive or legally binding.

Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell product s that is ope n for accept ance or the gr ant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.

, unless otherwise

Product data sheet Rev. 02 — 22 March 2010 11 of 13

Page 12

NXP Semiconductors

PHP28NQ15T

N-channel TrenchMOS standard level FET

Export control — This document as well as the item(s) described herein may

be subject to export control regulations. Export might require a prior authorization from national authorities.

Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It i s neither qua lif ied nor test ed in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equ ipment or applications.

In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b)

whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, da mages or failed produ ct cl aims resulting from custome r design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications.

9.4 Trademarks

Notice: All referenced brands, prod uct names, service names and trad emarks are the property of their respective owners.

TrenchMOS — is a trademark of NXP B.V.

10. Contact information

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected]

Product data sheet Rev. 02 — 22 March 2010 12 of 13

Page 13

NXP Semiconductors

11. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.1 General description . . . . . . . . . . . . . . . . . . . . . .1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2

5 Thermal characteristics . . . . . . . . . . . . . . . . . . .4

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5

7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9

8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .10

9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .11

9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .11

9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .11

9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .11

9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12

10 Contact information. . . . . . . . . . . . . . . . . . . . . .12

PHP28NQ15T

N-channel TrenchMOS standard level FET

Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected]

Date of release: 22 March 2010

Document identifier: PHP28NQ15T_2