Philips phe13005x Datasheet

Page 1

1. Product profile

1.1 General description

High-voltage, high-speed planar-passivated, NPN power switching tra nsistor in a full pack plastic package for use in high frequency electronic lighting ballast applications

1.2 Features and benefits

PHE13005X

Silicon diffused power transistor

Rev. 02 — 20 November 2009 Product data sheet

 Fast switching  High voltage capability of 700 V

 Isolated package  Low thermal resistance

1.3 Applications

 Electronic lighting ballasts

1.4 Quick reference data

Table 1. Quick reference

Symbol Parameter Conditions Min Typ Max Unit

tot

CESM

Static characteristics

collector current DC; see Figure 3, 1 and 2 --4A total power

dissipation collector-emitter

peak voltage

DC current gain IC=1A; VCE=5V;

Th≤ 25 °C; see Figure 4 --26W

VBE= 0 V - - 700 V

12 20 40

=25°C; see Figure 11

=5V; IC=2A;

Th=25°C; see Figure 11

10 17 28

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NXP Semiconductors

sym123

2. Pinning information

PHE13005X

Silicon diffused power transistor

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1B base 2 C collector 3 E emitter

mb n.c. isolated

321

SOT186A (TO-220F)

3. Ordering information

Table 3. Ordering information

Type number Package

PHE13005X TO-220F plastic single-ended package; isolated heatsink mounted; 1 mounting

Name Description Version

hole; 3-lead TO-220 "full pack"

SOT186A

Product data sheet Rev. 02 — 20 November 2009 2 of 13

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NXP Semiconductors

001aab999

4. Limiting values

PHE13005X

Silicon diffused power transistor

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V V

I I I I P T T

C CM B BM

CESM

CBO CEO

tot stg j

collector-emitter peak voltage

collector-base voltage IE=0A - 700 V collector-emitter

voltage collector current DC; see Figure 3, 1 and 2 -4A peak collector current - 8 A base current -2A peak base current - 4 A total power dissipation Th≤ 25 °C; see Figure 4 -26W storage temperature -65 150 °C junction temperature - 150 °C

(A)

VBE=0V - 700 V

IB=0A - 400 V

001aaf009

VBE = −5V

0 800600200 400

CL(CE)

Fig 1. Reverse bias safe operating area

(V)

CL(CE)

probe point

Bon

DUT

Fig 2. Test circuit for reverse bias safe operating area

Product data sheet Rev. 02 — 20 November 2009 3 of 13

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NXP Semiconductors

PHE13005X

Silicon diffused power transistor

(A)

CM(max)

C(max)

−1

−2

−3

1 10

Fig 3. Forward bias safe operating area

001aai071

duty cycle = 0.01

CL(CE)

tp = 20 μs

50 μs 100 μs

200 μs 500 μs DC

(5)

(V)

(4)

(1)

(2)

(3)

120

der

03aa13

(%)

0 50 100 150 200

(°C)

Fig 4. Normalized total power dissipation as a function of heatsink temperature

Product data sheet Rev. 02 — 20 November 2009 4 of 13

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NXP Semiconductors

5. Thermal characteristics

PHE13005X

Silicon diffused power transistor

Table 5. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

th(j-h)

thermal resistance from

with heatsink compound; see Figure 5 --4.8K/W

junction to heatsink

th(j-a)

thermal resistance from

-55-K/W

junction to ambient

001aag169

δ =

1/f

1010

tp (s)

1/f

−1

110

th(j-h)

(K/W)

δ = 0.5

0.2

0.1

0.05

0.02

−1

−2

−3

−6

−5

−4

−3

−2

Fig 5. Transient thermal impedance from junction to heatsink as a function of pulse duration

Product data sheet Rev. 02 — 20 November 2009 5 of 13

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NXP Semiconductors

6. Characteristics

PHE13005X

Silicon diffused power transistor

Table 6. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

CES

CBO

collector-emitter cut-off current

collector-base cut-off

VBE=0V; VCE= 700 V; Tj=25°C --1mA

=0V; VCE= 700 V; Tj=100°C --5mA

VCB=700V; IE=0A; Th=25°C --1mA

current

CEO

collector-emitter cut-off

VCE=400V; IB=0A; Th=25°C --0.1mA

current

EBO

emitter-base cut-off

VEB=9V; IC=0A; Th=25°C --1mA

current

CEOsus

CEsat

collector-emitter sustaining voltage

collector-emitter saturation voltage

IB=0A; IC=10mA; LC=25mH; Th= 25 °C; see Figure 6 and 7

IC=1A; IB= 0.2 A; Th=25°C; see Figure 8

=2A; IB= 0.5 A; Th=25°C;

and 9

400 - - V

-0.10.5V

-0.20.6V

see Figure 8 and 9

=4A; IB=1A; Th=25°C;

-0.31V

see Figure 8 and 9

BEsat

base-emitter saturation voltage

IC=1A; IB= 0.2 A; Th=25°C; see Figure 10

=2A; IB= 0.5 A; Th=25°C;

- 0.85 1.2 V

- 0.92 1.6 V

see Figure 10

DC current gain IC=1A; VCE=5V; Th=25°C;

12 20 40

see Figure 11 I

=2A; VCE=5V; Th=25°C;

10 17 28

see Figure 11

Dynamic characteristi cs

storage time IC=2A; I

Bon

= 0.4 A; I

=-0.4A;

Boff

-2.74µs RL=75Ω; Th= 25 °C; resistive load; see Figure 12

=2A; I

and 13

= 0.4 A; VBB=-5V;

Bon

-1.22µs LB=1µH; Th= 25 °C; inductive load; see Figure 14 and 15

=2A; I

=1µH; Th= 100 °C; inductive load;

= 0.4 A; VBB=-5V;

Bon

-1.44µs see Figure 14 and 15

fall time IC=2A; I

Bon

= 0.4 A; I

=-0.4A;

Boff

-0.30.9µs RL=75Ω; Th= 25 °C; resistive load; see Figure 13

=2A; I

and 12

= 0.4 A; VBB=-5V;

Bon

-0.10.5µs LB=1µH; Th= 25 °C; inductive load; see Figure 14 and 15

=2A; I

=1µH; Th= 100 °C; inductive load;

= 0.4 A; VBB=-5V;

Bon

- 0.16 0.9 µs see Figure 14 and 15

Product data sheet Rev. 02 — 20 November 2009 6 of 13

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NXP Semiconductors

001aab988

(mA)

PHE13005X

Silicon diffused power transistor

100 Ω to 200 Ω

horizontal

oscilloscope

vertical

6 V

30 Hz to 60 Hz

50 V

1 Ω300 Ω

001aab9

Fig 6. Test circuit for collector-emit ter sustaining

voltage

003aad540

CEsat

(V)

2.0

1.6

1.2

0.8

IC = 1 A

2 A

3 A

4 A

250

100

min

CEOsus

Fig 7. Oscilloscope display for collector-emitter

sustaining voltage test waveform

003aad542

CEsat

(V)

1.0

0.8

0.6

0.4

VCE (V)

0.4

−2

−1

IB (A)

10110

Fig 8. Collector-emitter saturation voltage; typical

values

0.2

−1

(A)

101

Fig 9. Collector-emitter saturation voltage as a

function of collector current; typical values

Product data sheet Rev. 02 — 20 November 2009 7 of 13

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NXP Semiconductors

001aab990

001aab989

PHE13005X

Silicon diffused power transistor

(A)

003aad541

101

BEsat

(V)

1.4

1.2

1.0

0.8

0.6

0.4

0.2

−1

Fig 10. Base-emitter saturation voltage; typical values

90 %

Con

90 %

1 V

−2

−1

003aad539

VCE = 5 V

IC (A)

10110

Fig 11. DC current gain as a function of collector

current; typical values

10 %

Bon

10 %

Boff

off

tr ≤ 30 ns

−I

Fig 12. Switching times waveforms for resistive load

Fig 13. Test circuit for resistive load switching

DUT

Product data sheet Rev. 02 — 20 November 2009 8 of 13

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NXP Semiconductors

Con

90 %

PHE13005X

Silicon diffused power transistor

10 %

off

Bon

−I

Boff

001aab99

Fig 14. Switching times waveforms for inductive load

Bon

Fig 15. Test circuit for inductive load switching

DUT

001aab99

7. Isolation characteristics

Table 7. Isolation characteristics

Symbol Parameter Conditions Min Typ Max Unit

isol(RMS)

isol

RMS isolation voltage 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; Th=25°C;

isolation capacitance from collector to external heatsink;

--2500V from all terminals to external heatsink; clean and dust free

-10-pF f=1MHz; T

=25°C

Product data sheet Rev. 02 — 20 November 2009 9 of 13

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NXP Semiconductors

8. Package outline

Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 'full pack'

PHE13005X

Silicon diffused power transistor

SOT186

w M

mounting

base

0 5 10 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

Notes

1. Terminal dimensions within this zone are uncontrolled.

2. Both recesses are ∅ 2.5 × 0.8 max. depth

OUTLINE

VERSION

SOT186A 3-lead TO-220F

4.6

4.0

2.9

2.5

1.1

0.9

0.7

IEC JEDEC JEITA

1.4

1.0

0.7

0.4

15.8

15.2

6.5

10.3

9.7

2.54

6.3

REFERENCES

2.7

1.7

0.6

0.4

14.4

13.5

5.08

3.30

2.79

(1)

max.

3.2

3.0

EUROPEAN

PROJECTION

2.6

2.3

(2)

qQPL

3.0

2.5 0.4

2.6

ISSUE DATE

02-04-09 06-02-14

Fig 16. Package outline SOT186A (TO-220F)

Product data sheet Rev. 02 — 20 November 2009 10 of 13

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NXP Semiconductors

9. Revision history

PHE13005X

Silicon diffused power transistor

Table 8. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PHE13005X_2 20091120 Product data sheet - PHE13005X_1 Modifications: PHE13005X_1 20080515 Product data sheet - -

• Various changes to content.

Product data sheet Rev. 02 — 20 November 2009 11 of 13

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NXP Semiconductors

PHE13005X

Silicon diffused power transistor

10. Legal information

10.1 Data sheet status

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product

status information is available on the Internet at URL http://www.nxp.com

[1][2]

Product status

[3]

Definition

10.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.

Short data sheet — A short data sheet is an extract from a full dat a sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied u pon to co nt ain det ailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

10.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconduct ors does not give any repr esentatio ns or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.

Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteri stics sections of this document, and as such is not complete, exhaustive or legally binding.

Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell product s that is ope n for accept ance or the gr ant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.

, including those pertaining to warranty,

10.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.

11. Contact information

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected]

Product data sheet Rev. 02 — 20 November 2009 12 of 13

Page 13

NXP Semiconductors

12. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.1 General description . . . . . . . . . . . . . . . . . . . . . .1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3

5 Thermal characteristics . . . . . . . . . . . . . . . . . . .5

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6

7 Isolation characteristics . . . . . . . . . . . . . . . . . . .9

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .1 0

9 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .11

10 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12

10.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12

10.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .12

10.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .12

10.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12

11 Contact information. . . . . . . . . . . . . . . . . . . . . .12

PHE13005X

Silicon diffused power transistor

Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected]

Date of release: 20 November 2009

Document identifier: PHE13005X_2