Philips phe13003a Datasheet

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PHE13003A

NPN power transistor

Rev. 02 — 29 July 2010 Product data sheet

1. Product profile

1.1 General description

High voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92) 3 leads plastic package.

1.2 Features and benefits

 Fast switching  High voltage capability of 700 V

1.3 Applications

 Compact fluorescent lamps (CFL)  Electronic lighting ballasts

 Inverters  Off-line self-oscillating power supplies

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

tot

CESM

Static characteristics

collector current DC; see Figure 2 --1A total power

dissipation collector-emitter peak

voltage

DC current gain IC=0.8A; VCE=5V;

≤ 25 °C; see Figure 1 --2.1W

lead

VBE=0V --700V

57.520

=25°C; see Figure 8;

lead

see Figure 9

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NXP Semiconductors

sym123

2. Pinning information

PHE13003A

NPN power transistor

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic sy m bol

1 B base 2 C collector 3Eemitter

123

SOT54 (TO-92)

3. Ordering information

Table 3. Ordering information

Type number Package

PHE13003A TO-92 plastic single-ended leaded (through hole) package; 3 leads SOT54

Name Description Version

4. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V V V I

P T T V

CESM CBO CEO

tot stg j EBO

collector-emitter peak voltage VBE= 0 V - 700 V collector-base voltage IE= 0 A - 700 V collector-emitter voltage IB= 0 A - 400 V collector current DC; see Figure 2 -1A peak collector current - 2 A base current DC - 0.5 A peak base current - 1 A total power dissipation T storage temperature -65 150 °C junction temperature - 150 °C emitter-base voltage IC= 0 A; I(Emitter) = 10 mA - 9 V

≤ 25 °C; see Figure 1 -2.1W

lead

Product data sheet Rev. 02 — 29 July 2010 2 of 12

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NXP Semiconductors

003aad545

PHE13003A

NPN power transistor

120

der

(%)

0 20015050 100

003aae644

(°C)

lead

Fig 1. Normalized total power dissipation as a function of lead temperatur e

(A)

C(max)

−1

−2

−3

1 10

Fig 2. Forward bias safe operating area

(1)

CL(CE)

(V)

Product data sheet Rev. 02 — 29 July 2010 3 of 12

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NXP Semiconductors

5. Thermal characteristics

PHE13003A

NPN power transistor

Table 5. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

th(j-lead)

thermal resistance from

see Figure 3 --60K/W

junction to lead

th(j-a)

th(j-lead)

(K/W)

−1

−2

thermal resistance from junction to ambient

−5

−4

printed-circuit board mounted; lead length = 4 mm

−3

−2

- 150 - K/W

001aab451

tp (s)

δ =

−1

11010

Fig 3. Transient thermal impedance from junction to lead as a function of pulse width

Product data sheet Rev. 02 — 29 July 2010 4 of 12

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NXP Semiconductors

001aab987

6. Characteristics

PHE13003A

NPN power transistor

Table 6. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

CES

collector-emitter cut-off

VBE=0V; VCE= 700 V; Tj=125°C --5mA

current

EBO

emitter-base cut-off

VEB=9V; IC=0A; T

=25°C --1mA

lead

current

CEOsus

CEsat

collector-emitter sustaining voltage

collector-emitter saturation voltage

IB=0A; IC=1mA; LC=25mH; T

=25°C; see Figure 4; see Figure 5

lead

IC=0.25A; IB=50mA; T

lead

=25°C;

see Figure 6

= 0.5 A; IB= 125 mA; T

lead

=25°C;

400 - - V

-0.20.5V

-0.31V

see Figure 6 I

=0.75A; IB=250mA; T

lead

=25°C;

-0.41.5V

see Figure 6

BEsat

base-emitter saturation voltage

IC=0.25A; IB=50mA; T see Figure 7

= 0.5 A; IB= 125 mA; T

lead

=25°C;

--1V

--1.2V

see Figure 7

DC current gain IC=0.5mA; VCE=2V; T

lead

=25°C;

12 - -

see Figure 8; see Figure 9

= 0.4 A; VCE=5V; T

see Figure 8 I

= 0.8 A; VCE=5V; T

; see Figure 9

lead

=25°C;

10 - 30

57.520

see Figure 8; see Figure 9

Dynamic characteristi cs

fall time IC=1A; I

LB=1µH; T see Figure 10

= 200 mA; VBB=-5V;

Bon

= 25 °C; inductive load;

lead

; see Figure 11

-80-ns

100 Ω to 200 Ω

horizontal

oscilloscope

vertical

6 V

30 Hz to 60 Hz

50 V

1 Ω300 Ω

Fig 4. Test circuit for collector-emitter sustaining

voltage

Product data sheet Rev. 02 — 29 July 2010 5 of 12

(mA)

250

100

min

CEOsus

001aab98

Fig 5. Oscilloscope display for collector-emitter

sustaining voltage test waveform

VCE (V)

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NXP Semiconductors

PHE13003A

NPN power transistor

003aad548

Tj = 125 °C

Tj = 25 °C

Tj = −35 °C

IC (A)

10110

2.0

CEsat

(V)

1.6

1.2

0.8

0.4

−2

−1

Fig 6. Collector-emitter saturation voltage as a

function of collector current; typical values

003aad546

003aad549

(A)

10110

BEsat

(V)

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

Tj = 25 °C

−2

−1

= −35 °C

Tj = 125 °C

Fig 7. Base-emitter saturation voltage as a function of

collector current; typical values

003aad547

= 125 °C

Tj = 25 °C

−3

VCE = 3 V

−2

= −35 °C

(1)

(2)

(3)

−1

IC (A)

10110

Fig 8. DC current gain as a function of collector

current; typical values

= 125 °C

Tj = 25 °C

−3

VCE = 5 V

−2

= −35 °C

(1)

(2)

(3)

−1

IC (A)

10110

Fig 9. DC current gain as a function of collector

current; typical values

Product data sheet Rev. 02 — 29 July 2010 6 of 12

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NXP Semiconductors

PHE13003A

NPN power transistor

Con

90 %

10 %

off

Bon

−I

Boff

001aab99

I V

Bon

DUT

001aab99

Fig 10. Test circuit for inductive load switching Fig 11. Switching times waveforms for inductive load

Product data sheet Rev. 02 — 29 July 2010 7 of 12

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NXP Semiconductors

PHE13003A

NPN power transistor

7. Package outline

Plastic single-ended leaded (through hole) package; 3 leads SOT5

A L

0 2.5 5 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

5.2

5.0

Note

1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.

OUTLINE

VERSION

SOT54 TO-92 SC-43A

0.48

0.40

0.66

0.45

0.38

4.8

4.4

0.55

IEC JEDEC JEITA

1.7

4.2

1.4

3.6

REFERENCES

2.54

1.27

14.5

12.7

(1)

max.

2.5

EUROPEAN

PROJECTION

ISSUE DATE

04-06-28 04-11-16

Fig 12. Package outline SOT54 (TO-92)

Product data sheet Rev. 02 — 29 July 2010 8 of 12

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NXP Semiconductors

8. Revision history

PHE13003A

NPN power transistor

Table 7. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PHE13003A v.2 20100729 Product data sheet - PHE13003A v.1 Modifications: PHE13003A v.1 20090813 Product data sheet - -

• Various changes to content.

Product data sheet Rev. 02 — 29 July 2010 9 of 12

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NXP Semiconductors

PHE13003A

NPN power transistor

9. Legal information

9.1 Data sheet status

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) descr ibed in this document may have changed since this document was publish ed and may differ in case of multiple devices. The latest product

status information is available on the Internet at URL http://www.nxp.com.

[1][2]

Product status

[3]

Definition

9.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied u pon to co nt ain det ailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.

9.3 Disclaimers

Limited warranty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information.

In no event shall NXP Semiconductors be lia ble for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semi conductors’ aggregat e and cumulative liabil ity towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors.

Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonabl y be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.

Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteri stics sections of this document, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.

Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.

NXP Semiconductors does not accept any liability related to any default , damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third part y customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.

Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.

Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective

, unless otherwise

Product data sheet Rev. 02 — 29 July 2010 10 of 12

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NXP Semiconductors

PHE13003A

NPN power transistor

agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing in this document may be interpret ed or construed as an offer to sell products that is open f or acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.

Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It i s neither qua lif ied nor test ed in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equ ipment or applications.

In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the

product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, da mages or failed produ ct cl aims resulting from custome r design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications.

9.4 Trademarks

Notice: All referenced brands, prod uct names, service names and trad emarks are the property of their respective owners.

Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.

HD Radio and HD Radio logo — are trademarks of iBiquity Digital

Corporation.

10. Contact information

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected]

Product data sheet Rev. 02 — 29 July 2010 11 of 12

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NXP Semiconductors

11. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.1 General description . . . . . . . . . . . . . . . . . . . . . .1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2

5 Thermal characteristics . . . . . . . . . . . . . . . . . . .4

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5

7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .8

8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . .9

9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .10

9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .10

9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .10

9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .11

10 Contact information. . . . . . . . . . . . . . . . . . . . . .11

PHE13003A

NPN power transistor

Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected]

Date of release: 29 July 2010

Document identifier: PHE13003A