Philips ph2369 Datasheet

DATA SH EET

ook, halfpage

DISCRETE SEMICONDUCTORS

M3D186

PH2369

NPN switching transistor

Product data sheet
Supersedes data of 1999 Apr 27

2004 Oct 11

NXP Semiconductors Product data sheet

NPN switching transistor PH2369

FEATURES

• Low current (max. 200 mA)

• Low voltage (max. 15 V).

PINNING

PIN DESCRIPTION

1 emitter
2 base

APPLICATIONS

3 collector

• High-speed switching.

DESCRIPTION

NPN switching transistor in a TO-92; SOT54 plastic
package.

handbook, halfpage

1

2

3

2

MAM182

Fig.1 Simplified outline (TO-92; SOT54) and

symbol.

ORDERING INFORMATION

PACKAGE

T YPE NUMBER

NAME DESCRIPTION VERSION

PH2369 SC-43A plastic single-ended leaded (throug h hole) package; 3 leads SOT54

3

1

LIMITING VALUES

In accordance with the Absolu te Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
V
I
I
I
P
T
T
T

CBO
CEO

EBO
C
CM
BM

tot

stg

j

amb

collector-base voltage open emitter − 40 V
collector-emitter voltage open base − 15 V
emitter-base voltage open collector − 4.5 V
collector current (DC) − 200 mA
peak collector current − 300 mA
peak base current − 100 mA
total power dissipation T

≤ 25 °C − 500 mW

amb

storage temperature −65 +150 °C
junction temperature − 150 °C
ambient temperature −65 +150 °C

2004 Oct 11 2

NXP Semiconductors Product data sheet

NPN switching transistor PH2369

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th(j-a)

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

T

= 25 °C unless otherwise specified.

amb

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

I

CBO

I

EBO

h

FE

V

CEsat

V

BEsat

C

c

C

e

f

T

Switching times (between 10 % and 90 % levels)

t

on

t

d

t

r

t

off

t

s

t

f

t

on

t

off

thermal resistance from junction to ambient note 1 250 K/W

collector-base cut-off curren t VCB = 20 V; IE = 0 A − 400 nA

VCB = 20 V; IE = 0 A; Tj = 125 °C − 30 µA
emitter-base cut-off current VEB = 4 V; IC = 0 A − 100 nA
DC current gain VCE = 1 V; IC = 10 mA 40 120

VCE = 1 V; IC = 10 mA; T

= −55 °C 20 −

amb

VCE = 2 V; IC = 100 mA 20 −
collector-emitter saturation voltage IC = 10 mA; IB = 1 mA − 250 mV
base-emitter saturation vo ltage IC = 10 mA; IB = 1 mA 700 850 mV
collector capacitance VCB = 5 V; IE = ie = 0 A; f = 1 MHz − 4 pF
emitter capacitance VEB = 1 V; IC = ic = 0 A; f = 1 MHz − 4.5 pF
transition frequency VCE = 10 V; IC = 10 mA; f = 100 MHz 500 − MHz

turn-on time I
delay time − 4 ns

= 10 mA; I

Con

Fig.2 test conditions A

see

Bon

= 3 mA; I

= −1.5 mA;

Boff

− 10 ns

rise time − 6 ns
turn-off time − 20 ns
storage time − 10 ns
fall time − 10 ns
turn-on time I
turn-off time − 35 ns

= 100 mA; I

Con

Fig.2 test conditions B

see

Bon

= 40 mA; I

= −20 mA;

Boff

− 13 ns

2004 Oct 11 3

NXP Semiconductors Product data sheet

o

e

NPN switching transistor PH2369

scilloscope

V

I

Test conditions A.

Vi = 0.5 to 4.2 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.
R1 = 56 Ω; R2 = 1 kΩ; RB = 1 kΩ; RC = 270 Ω.
VBB = 0.2 V; VCC = 2.7 V.
Oscilloscope: input impedance Zi = 50 Ω.

(probe)

450 Ω

R1

R2

V

R

B

BB

V

CC

R

C

V

o

(probe)

450 Ω

DUT

mlb826

Test conditions B.

Vi = 0.5 to 4.52 V; T = 200 µs; tp = 10 µs; tr = tf ≤ 3 ns.
R1 = 100 Ω; R2 = 68 Ω; RB = 390 Ω; RC = 47 Ω.
VBB = −3 V; VCC = 4.6 V.
Oscilloscope: input impedance Zi = 50 Ω.

Fig.2 Test circuit for switching times.

oscilloscop

2004 Oct 11 4

NXP Semiconductors Product data sheet

4

NPN switching transistor PH2369

PACKAGE OUTLINE

Plastic single-ended leaded (through hole) package; 3 leads SOT5

c

E

d

A L

1

D

2

3

b

1

0 2.5 5 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

A

5.2

mm

5.0

Note

1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.

OUTLINE
VERSION

SOT54 TO-92 SC-43A

b

0.48

0.40

b

c

D

d

1

0.66

0.45

0.38

4.8

4.4

0.55

IEC JEDEC JEITA

E

1.7

4.2

1.4

3.6

REFERENCES

2.54

e

e

1

1.27

L

14.5

12.7

L

1

(1)

L

1

max.

2.5

EUROPEAN

PROJECTION

b

e

1

e

ISSUE DATE

04-06-28
04-11-16

2004 Oct 11 5

NXP Semiconductors Product data sheet

NPN switching transistor PH2369

DATA SHEET STATUS

DOCUMENT

STATUS

Objective data sheet Development This document contains data from the objective specification for product

Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the prod uct specification.

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product status of device(s) described in this document may have changed since this do cument was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at

http://www.nxp.com.

URL

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General ⎯ Information in this document is believed to be

accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
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specifications and product descriptions, at any time and
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information supplied prior to the publication hereof.

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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modificati on .

(1)

PRODUCT
STATUS

(2)

development.

DEFINITION

System of IEC
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.

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products are sold subject to the general terms and
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http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
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Export control ⎯ This document as well as the item(s)
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regulations. Export might require a prior authorization from
national authorities.

Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.

60134) may cause permanent damage to

Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings

2004 Oct 11 6

NXP Semiconductors

Customer notification

This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.

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© NXP B.V. 2009
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The information presented in this documen t d oes not form part of any quotation or contract, is believe d to be accurate and reliable and may be changed
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under patent- or other industri al or intellectual property rights.

Printed in The Netherlands R75/04/pp7 Date of release: 2004 Oct 11 Document order number: 9397 750 13616