Page 1
DATA SH EET
DISCRETE SEMICONDUCTORS
4
M3D74
PEMZ7
NPN/PNP general purpose
transistors
Product data sheet
Supersedes data of 2001 Sep 25
2001 Nov 07
Page 2
NXP Semiconductors Product data sheet
NPN/PNP general purpose transistors PEMZ7
FEATURES
• 300 mW total power dissipation
• Very small 1.6 × 1.2 mm ultra thin package
• Self alignment during soldering due to straight leads
• Low collector capacitance
• Low V
CEsat
• High current capabilities
• Improved thermal behaviour due to flat leads
• Reduced required PCB area
• Reduced pick and place costs.
APPLICATIONS
• Heavy duty battery powered equipment (automotive,
telecom and audio-video) such as motor and lamp
drivers
• V
critical applications such as latest low supply
CEsat
voltage IC
applications
• All battery driven equipment, to save battery power.
DESCRIPTION
NPN/PNP low V
transistor pair in a SOT666 plastic
CEsat
package.
PINNING
PIN DESCRIPTION
1, 4 emitter TR1; TR2
2, 5 base TR1; TR2
6, 3 collector TR1; TR2
handbook, halfpage
123
Top view
46
5
MAM456
645
TR1
132
Fig.1 Simplified outline (SOT666) and symbol.
TR2
MARKING
T YPE NUMBER MARKING CODE
PEMZ7 Z7
2001 Nov 07 2
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NXP Semiconductors Product data sheet
NPN/PNP general purpose transistors PEMZ7
LIMITING VALUES
In accordance with the Absolu te Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor; for the PNP transistor with negative polarity
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Per device
P
tot
collector-base voltage open emitter − 15 V
collector-emitter voltage open base − 12 V
emitter-base voltage open collector − 6 V
collector current (DC) − 500 mA
peak collector current − 1 A
peak base current − 100 mA
total power dissipation T
≤ 25 °C; note 1 − 200 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
total power dissipation T
≤ 25 °C; note 1 − 300 mW
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to
notes 1 and 2 416 K/W
ambient
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering method is reflow soldering.
2001 Nov 07 3
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NXP Semiconductors Product data sheet
C
NPN/PNP general purpose transistors PEMZ7
CHARACTERISTICS
T
= 25 °C; unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per transistor; for the PNP transistor with negative polarity
I
CBO
I
EBO
h
V
f
T
C
FE
CEsat
c
collector-base cut-off curren t VCB = 15 V; IE = 0 − − 100 nA
VCB = 15 V; IE = 0; Tj = 150 °C − − 50 μA
emitter-base cut-off current VEB = 5 V; IC = 0 − − 100 nA
DC current gain VCE = 2 V; IC = 10 mA 200 − −
collector-emitter saturation
IC = 200 mA; IB = 10 mA − − 220 mV
voltage
transition frequency IC = 100 mA; VCE = 5 V;
= 100 MHz
TR1 (NPN) 250 420 − MHz
f
TR2 (PNP) 100 280 − MHz
collector capacitance VCB = 10 V; IE = Ie = 0; f = 1 MHz
TR1 (NPN) − 4.4 6 pF
TR2 (PNP) − − 10 pF
600
handbook, halfpage
h
FE
500
400
300
200
100
0
−1
10
TR1 (NPN); VCE = 2 V.
(1) T
= 150 °C.
amb
(2) T
= 25 °C.
amb
(3) T
= −55 °C.
amb
(1)
(2)
(3)
110
MHC014
2
10
(mA)
I
Fig.2 DC current gain as a function of collector
current; typical values.
1200
handbook, halfpage
I
C
(mA)
800
400
3
10
0
0
TR1 (NPN); T
(1) I
(2) IB = 4.14 mA
(3) IB = 3.68 mA
(4) IB = 3.22 mA
= 4.60 mA
B
amb
210
= 25 °C.
(5) IB = 2.76 mA
(6) IB = 2.30 mA
(7) IB = 1.84 mA
(8) IB = 1.38 mA
(4)
468
MLD672
(2)(3)
(1)
(5)
(6)
(7)
(8)
(9)
(10)
VCE (V)
(9) IB = 0.92 mA
(10)IB = 0.46 mA
Fig.3 Collector current as a function of
collector-emitter voltage; typical values.
2001 Nov 07 4
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NXP Semiconductors Product data sheet
C
NPN/PNP general purpose transistors PEMZ7
1200
handbook, halfpage
V
BE
(mV)
1000
(1)
800
(2)
600
(3)
400
200
−1
110
10 10
2
IC (mA)
TR1 (NPN); VCE = 2 V.
(1) T
= −55 °C.
amb
(2) T
= 25 °C.
amb
(3) T
= 150 °C.
amb
Fig.4 Base-emitter voltage as a function of
collector current; typical values.
MLD673
1200
handbook, halfpage
V
BEsat
(mV)
MHC017
1000
800
(1)
(2)
600
400
(3)
200
3
10
−1
10
11010210
IC (mA)
3
TR1 (NPN); IC/IB = 20.
(1) T
= 150 °C.
amb
(2) T
= 25 °C.
amb
(3) T
= −55 °C.
amb
Fig.5 Base-emitter saturation voltage as a
function of collector current; typical values.
3
10
handbook, halfpage
V
CEsat
(mV)
2
10
(1)
MHC018
10
(2)
(3)
1
−1
10
110
10
2
IC (mA)
TR1 (NPN); IC/IB = 20.
= 150 °C.
(1) T
amb
(2) T
= 25 °C.
amb
(3) T
= −55 °C.
amb
Fig.6 Collector-emitter saturation voltage as a
function of collector current; typical values.
600
handbook, halfpage
h
FE
500
(1)
MHC019
400
300
(2)
200
(3)
100
3
10
0
−10
−1
−1 −10
−10
2
(mA)
I
−10
3
TR2 (PNP); VCE = −2 V.
= 150 °C.
(1) T
amb
(2) T
= 25 °C.
amb
(3) T
= −55 °C.
amb
Fig.7 DC current gain as a function of collector
current; typical values.
2001 Nov 07 5
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NXP Semiconductors Product data sheet
NPN/PNP general purpose transistors PEMZ7
−1200
handbook, halfpage
I
C
(4)
(mA)
−800
−400
0
0
TR2 (PNP); T
(1) IB = 7.0 mA
(2) IB = 6.3 mA
(3) IB = 5.6 mA
(4) IB = 4.9 mA
−2 −10
= 25 °C.
amb
−4 −6 −8
(5) IB = 4.2 mA
(6) IB = 3.5 mA
(7) IB = 2.8 mA
(8) IB = 2.1 mA
Fig.8 Collector current as a function of
collector-emitter voltage; typical values.
MLD650
(2)(3)
(1)
(5)
(6)
(7)
(8)
(9)
(10)
VCE (V)
(9) IB = 1.4 mA
(10)IB = 0.7 mA
−1200
handbook, halfpage
V
BE
(mV)
−1000
(1)
−800
(2)
−600
(3)
−400
−200
−1
−1−10
−10 −10
2
IC (mA)
TR2 (PNP); VCE = −2 V.
(1) T
= −55 °C.
amb
(2) T
= 25 °C.
amb
(3) T
= 150 °C.
amb
Fig.9 Base-emitter voltage as a function of
collector current; typical values.
MLD667
−10
3
−1200
handbook, halfpage
V
BEsat
(mV)
−1000
−800
(1)
(2)
−600
−400
−200
−10
−1
(3)
−1 −10 −10
2
IC (mA)
TR2 (PNP); IC/IB = 20.
= 150 °C.
(1) T
amb
(2) T
= 25 °C.
amb
(3) T
= −55 °C.
amb
Fig.10 Base-emitter satur ation v oltag e as a
function of collector current; typical values.
MHC022
−10
3
−10
handbook, halfpage
V
CEsat
(mV)
2
−10
MHC023
(1)
(2)
(3)
−10
−1
3
−10
−1
−1 −10
−10
2
IC (mA)
−10
3
TR2 (PNP); IC/IB = 20.
= 150 °C.
(1) T
amb
(2) T
= 25 °C.
amb
(3) T
= −55 °C.
amb
Fig.11 Collector-emitter saturation voltage as a
function of collector current; typical values.
2001 Nov 07 6
Page 7
NXP Semiconductors Product data sheet
6
NPN/PNP general purpose transistors PEMZ7
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads SOT66
D
A
E
X
S
YS
pin 1 index
123
e
DIMENSIONS (mm are the original dimensions)
UNIT b
mm
A
0.6
0.5
0.27
0.17
p
cD
0.18
0.08
1
1.7
1.5
b
p
e
E
1.3
1.1
456
A
w M
A
0 1 2 mm
scale
e
H
L
1.0
e
1
E
1.7
0.5
1.5
0.3
0.1
p
w
0.1y0.1
H
E
detail X
c
L
p
OUTLINE
VERSION
SOT666
REFERENCES
IEC JEDEC EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
01-01-04
01-08-27
2001 Nov 07 7
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NXP Semiconductors Product data sheet
NPN/PNP general purpose transistors PEMZ7
DATA SHEET STATUS
DOCUMENT
STATUS
Objective data sheet Development This document contains data from the objective specification for product
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this do cument was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
http://www.nxp.com.
URL
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General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
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Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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not designed, authorized or warranted to be su itable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
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property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modificati on .
(1)
PRODUCT
STATUS
(2)
DEFINITION
development.
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
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products are sold subject to the general terms and
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http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
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No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveya nce or
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Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC
the device. Limiting values are stress ratings only an d
operation of the device at these or any other conditions
2001 Nov 07 8
60134) may cause permanent damage to
Page 9
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors . No changes were
made to the content, except for the legal definitions and disclaimers.
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All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this documen t d oes not form part of any quotation or contract, is believe d to be accurate and reliable and may be changed
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under patent- or other industri al or intellectual property rights.
Printed in The Netherlands 613514/02/pp9 Date of release: 2001 Nov 07 Document order number: 9397 750 09054
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