Page 1
DATA SH EET
DISCRETE SEMICONDUCTORS
4
M3D74
PEMF21
12 V PNP loadswitch
Product data sheet 2004 Jan 12
Page 2
NXP Semiconductors Product data sheet
12 V PNP loadswitch PEMF21
FEATURES
• Low V
transistor and resistor-equipped transistor in
CEsat
one package
• Very small 1.6 × 1.2 mm ultra thin package
• Reduced component count.
APPLICATIONS
• Line switches
• Battery charger switches
• Power supply switches
• Drive switches
• General purpose analog switches.
DESCRIPTION
Low V
PNP transistor and NPN resistor-equipped
CEsat
transistor in a SOT666 plastic package (see
information” for package details).
MARKING
T YPE NUMBER MARKING CODE
PEMF21 2F
“Ordering
QUICK REFERENCE DATA
SYMBOL PARAMETER TYP. MAX. UNIT
TR1; PNP; low V
V
CEO
collector-emitter
CEsat
transistor
− −12 V
voltage
I
C
R
CEsat
collector current (DC) − −500 mA
equivalent
− 500 mΩ
on-resistance
TR2; NPN; resistor-equipped transistor
V
CEO
collector-emitter
− 50 V
voltage
I
O
output current (DC) − 100 mA
R1 bias resistor 10 − kΩ
R2 bias resistor 10 − kΩ
PINNING
PIN DESCRIPTION
1 emitter TR1
2 base TR1
3 collector TR2
4 emitter TR2
5 base TR2
6 collector TR1
handbook, halfpage
123
Top view
46
5
6
TR1
12 3
54
R2
R1
TR2
MHC707
Fig.1 Simplified outline (SOT666) and symbol.
ORDERING INFORMATION
PACKAGE
T YPE NUMBER
NAME DESCRIPTION VERSION
PEMF21 − plastic surface mounted package; 6 leads SOT666
2004 Jan 12 2
Page 3
NXP Semiconductors Product data sheet
12 V PNP loadswitch PEMF21
LIMITING VALUES
In accordance with the Absolu te Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Transistor TR1
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
Transistor TR2
V
CBO
V
CEO
V
EBO
V
i
I
O
I
CM
P
tot
Per device
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − −15 V
collector-emitter voltage open base − −12 V
emitter-base voltage open collector − −6 V
collector current (DC) − −500 mA
peak collector current − −1 A
peak base current − −100 mA
total power dissipation T
= 25 °C; note 1 − 200 mW
amb
collector-base voltage open emitter − 50 V
collector-emitter voltage open base − 50 V
emitter-base voltage open collector − 10 V
input voltage
positive − +40 V
negative − −10 V
output current (DC) − 100 mA
peak collector current − 100 mA
total power dissipation T
total power dissipation T
= 25 °C; note 1 − 200 mW
amb
= 25 °C; note 1 − 300 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Per device
R
th(j-a)
thermal resistance from junction to
notes 1 and 2 416 K/W
ambient
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. Reflow soldering is the only recommended soldering method.
2004 Jan 12 3
Page 4
NXP Semiconductors Product data sheet
12 V PNP loadswitch PEMF21
CHARACTERISTICS
T
= 25 °C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Transistor TR1
I
CBO
I
EBO
h
FE
V
CEsat
R
CEsat
V
BEsat
V
BEon
f
T
C
c
Transistor TR2
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
V
i(off)
V
i(on)
R1 input resistor 7 10 13 kΩ
R2
------- R1
C
c
collector-base cut-off curren t VCB = −15 V; IE = 0 − − −100 nA
emitter-base cut-off current VEB = −5 V; IC = 0 − − −100 nA
DC current gain VCE = −2 V; IC = −10 mA 200 − −
collector-emitter saturation voltage IC = −200 mA; IB = −10 mA − − −250 mV
equivalent on-resistance IC = −500 mA; IB = −50 mA; note 1 − 300 500 mΩ
base-emitter saturation vo ltage IC = −500 mA; IB = −50 mA; note 1 − − −1.1 V
base-emitter turn-on voltage VCE = −2 V; IC = −100 mA; note 1 − − −0.9 V
transition frequency IC = −100 mA; VCE = −5 V;
= 100 MHz
f
100 280 − MHz
collector capacitance VCB = −10 V; IE = ie = 0; f = 1 MHz − − 10 pF
collector-base cut-off curren t VCB = 50 V; IE = 0 − − 100 nA
collector-emitter cut-off current VCE = 30 V; IB = 0 − − 1 µA
emitter-base cut-off current VEB = 5 V; IC = 0 − − 400 µA
DC current gain VCE = 5 V; IC = 5 mA 30 − −
collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA − − 300 mV
input-off voltage VCE = 5 V; IC = 100 µA − − 0.5 V
input-on voltage VCE = 0.3 V; IC = 10 mA 3 − − V
resistor ratio 0.8 1 1.2
collector capacitance VCB = 10 V; IE = ie = 0; f = 1 MHz
− −
2.5 pF
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2004 Jan 12 4
Page 5
NXP Semiconductors Product data sheet
12 V PNP loadswitch PEMF21
600
handbook, halfpage
h
FE
500
(1)
MHC697
400
300
(2)
200
(3)
100
0
−10
−1
−1 −10
−10
2
IC (mA)
Transistor TR1; VCE = −2 V.
(1) T
= 150 °C.
amb
(2) T
= 25 °C.
amb
(3) T
= −55 °C.
amb
Fig.2 DC current gain as a function of collector
current; typical values.
−10
−1200
handbook, halfpage
I
C
(mA)
−1000
(1)
(2)
(3)
(4)
−800
−600
−400
−200
3
0
0 −10
−2 −4 −6
MHC698
(5)
(6)
(7)
(8)
(9)
(10)
−8
VCE (V)
Transistor TR1;
= 25 °C.
T
amb
(1) IB = −7.0 mA.
(2) IB = −6.3 mA.
(3) I
= −5.6 mA.
B
(4) IB = −4.9 mA.
(5) IB = −4.2 mA.
(6) IB = −3.5 mA.
(7) IB = −2.8 mA.
(8) IB = −2.1 mA.
(9) IB = −1.4 mA.
(10)IB = −0.7 mA.
Fig.3 Collector current as a function of
collector-emitter voltage; typical values.
−1200
handbook, halfpage
V
BE
(mV)
−1000
−800
(1)
(2)
−600
−400
−200
−10
−1
(3)
−1 −10
−10
2
IC (mA)
Transistor TR1; VCE = −2 V.
(1) T
= −55 °C.
amb
(2) T
= 25 °C.
amb
= 150 °C.
(3) T
amb
Fig.4 Base-emitter voltage as a function of
collector current; typical values.
MHC699
−10
−1200
handbook, halfpage
V
BEsat
(mV)
MHC700
−1000
−800
(1)
(2)
−600
−400
3
−200
−10
−1
(3)
−1 −10
−10
2
IC (mA)
−10
3
Transistor TR1; IC/IB = 20.
(1) T
= 150 °C.
amb
(2) T
= 25 °C.
amb
= −55 °C.
(3) T
amb
Fig.5 Base-emitter saturation voltage as a
function of collector current; typical values.
2004 Jan 12 5
Page 6
NXP Semiconductors Product data sheet
12 V PNP loadswitch PEMF21
3
−10
handbook, halfpage
V
CEsat
(mV)
2
−10
MHC701
(1)
(2)
(3)
−10
−1
−10
−1
−1 −10
−10
2
IC (mA)
Transistor TR1; IC/IB = 20.
(1) T
= 150 °C.
amb
(2) T
= 25 °C.
amb
(3) T
= −55 °C.
amb
Fig.6 Collector-emitter saturation voltage as a
function of collector current; typical values.
−10
3
10
handbook, halfpage
R
CEsat
(Ω)
2
10
MHC702
10
1
−1
3
10
−1
−10
−1 −10
−10
(1)
(2)
(3)
2
IC (mA)
−10
3
Transistor TR1; IC/IB = 20.
(1) T
= −55 °C.
amb
(2) T
= 25 °C.
amb
(3) T
= 150 °C.
amb
Fig.7 Equivalent on-resistance as a function of
collector current; typical values.
handbook, halfpage
1
V
CEsat
(V)
−1
10
−2
10
11010
(1)
(2)
(3)
MHC703
IC (mA)
Transistor TR2; IC/IB = 20.
(1) T
= 100 °C.
amb
(2) T
= 25 °C.
amb
= −40 °C.
(3) T
amb
Fig.8 Collector-emitter saturation voltage as a
function of collector current; typical values.
3
10
handbook, halfpage
h
FE
2
10
MHC704
(1)
(2)
(3)
10
1
−1
2
10
110
IC (mA)
2
10
Transistor TR2; VCE = 5 V.
(1) T
= 150 °C.
amb
(2) T
= 25 °C.
amb
= −40 °C.
(3) T
amb
Fig.9 DC current gain as a function of collector
current; typical values.
2004 Jan 12 6
Page 7
NXP Semiconductors Product data sheet
12 V PNP loadswitch PEMF21
2
10
handbook, halfpage
V
i(on)
MHC705
(V)
10
(1)
(2)
1
−1
10
−1
10
110
(3)
IC (mA)
Transistor TR2; VCE = 0.3 V.
(1) T
= −40 °C.
amb
(2) T
= 25 °C.
amb
(3) T
= 100 °C.
amb
Fig.10 Input-on voltage as a function of collector
current; typical values.
10
handbook, halfpage
V
i(off)
MHC706
(V)
(1)
1
−1
10
2
10
−2
10
(2)
(3)
−1
10
1
IC (mA)
10
Transistor TR2; VCE = 5 V.
(1) T
= −40 °C.
amb
(2) T
= 25 °C.
amb
(3) T
= 100 °C.
amb
Fig.11 Input-off voltage as a function of collector
current; typical values.
2004 Jan 12 7
Page 8
NXP Semiconductors Product data sheet
6
12 V PNP loadswitch PEMF21
PACKAGE OUTLINE
Plastic surface-mounted package; 6 leads SOT66
D
S
YS
A
E
H
E
X
456
pin 1 index
123
e
b
1
p
e
w M
A
A
c
L
p
detail X
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT b
mm
OUTLINE
VERSION
SOT666
A
0.6
0.5
0.27
0.17
cD
p
0.18
1.7
0.08
1.5
IEC JEDEC JEITA
1.3
1.1
e
E
1.0
REFERENCES
e
0.5
H
L
w
1
1.7
1.5
p
E
0.3
0.1y0.1
0.1
EUROPEAN
PROJECTION
ISSUE DATE
04-11-08
06-03-16
2004 Jan 12 8
Page 9
NXP Semiconductors Product data sheet
12 V PNP loadswitch PEMF21
DATA SHEET STATUS
DOCUMENT
STATUS
Objective data sheet Development This doc ument contains data from the objective specification for product
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
http://www.nxp.com.
URL
DISCLAIMERS
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be su itable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modificati on .
(1)
PRODUCT
STATUS
(2)
DEFINITION
development.
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveya nce or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC
the device. Limiting values are stress ratings only an d
operation of the device at these or any other conditions
2004 Jan 12 9
60134) may cause permanent damage to
Page 10
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: [email protected]
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this documen t d oes not form part of any quotation or contract, is believe d to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industri al or intellectual property rights.
Printed in The Netherlands R75/01/pp10 Date of release: 2004 Jan 12 Document order number: 9397 750 12204
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