Philips pemd15_pumd15 Datasheet [en, ca]

PEMD15; PUMD15

NPN/PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = 4.7 kΩ

Rev. 03 — 2 September 2009 Product data sheet

1. Product profile

1.1 General description

NPN/PNP Resistor-Equipped Transistors (RET)

Table 1. Product overview

Type number Package PNP/PNP

PEMD15 SOT666 - PEMB15 PEMH15
PUMD15 SOT363 SC-88 PUMB15 PUMH15

1.2 Features

n Built-in bias resistors
n Simplifies circuit design
n Reduces component count
n Reduces pick and place costs

NXP JEITA

complement

NPN/NPN
complement

1.3 Applications

n Low current peripheral driver
n Control of IC inputs
n Replaces general-purpose transistors in digital applications

1.4 Quick reference data

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

V

CEO

I

O

R1 bias resistor 1 (input) 3.3 4.7 6.1 kΩ
R2/R1 bias resistor ratio 0.8 1 1.2

collector-emitter voltage open base - - 50 V
output current (DC) - - 100 mA

NXP Semiconductors

2. Pinning information

Table 3. Pinning

Pin Description Simplified outline Symbol

1 GND (emitter) TR1
2 input (base) TR1
3 output (collector) TR2
4 GND (emitter) TR2
5 input (base) TR2
6 output (collector) TR1

PEMD15; PUMD15

NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ

6 45

1 32

001aab555

65 4

R2

R1

TR1

R2 R1

TR2

3. Ordering information

Table 4. Ordering information

Type number Package

PEMD15 - plastic surface mounted package; 6 leads SOT666
PUMD15 SC-88 plastic surface mounted package; 6 leads SOT363

4. Marking

Table 5. Marking codes

Type number Marking code

PEMD15 5E
PUMD15 D0*

[1] * = -: made in Hong Kong

* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China

1

23

006aaa143

Name Description Version

[1]

PEMD15_PUMD15_3 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 03 — 2 September 2009 2 of 10

NXP Semiconductors

5. Limiting values

Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per transistor; for the PNP transistor with negative polarity

V

CBO

V

CEO

V

EBO

V

I

I

O

I

CM

P

tot

T

stg

T

j

T

amb

Per device

P

tot

PEMD15; PUMD15

NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ

collector-base voltage open emitter - 50 V
collector-emitter voltage open base - 50 V
emitter-base voltage open collector - 10 V
input voltage TR1

positive - +30 V
negative - −10 V

input voltage TR2

positive - +10 V

negative - −30 V
output current (DC) - 100 mA
peak collector current - 100 mA
total power dissipation T

SOT363

SOT666
storage temperature −65 +150 °C
junction temperature - 150 °C
ambient temperature −65 +150 °C

total power dissipation T

SOT363

SOT666

amb

amb

≤ 25 °C

≤ 25 °C

[1]

- 200 mW

[1][2]

- 200 mW

[1]

- 300 mW

[1][2]

- 300 mW

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2] Reflow soldering is the only recommended soldering method.

PEMD15_PUMD15_3 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 03 — 2 September 2009 3 of 10

NXP Semiconductors

6. Thermal characteristics

Table 7. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

R

th(j-a)

Per device

R

th(j-a)

[1] Device mounted on a FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.

thermal resistance from
junction to ambient

SOT363
SOT666

thermal resistance from
junction to ambient

SOT363
SOT666

PEMD15; PUMD15

NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ

in free air

[1]

- - 625 K/W

[1][2]

- - 625 K/W

in free air

[1]

- - 416 K/W

[1][2]

- - 416 K/W

7. Characteristics

Table 8. Characteristics

T

= 25°C unless otherwise specified.

amb

Symbol Parameter Conditions Min Typ Max Unit

Per transistor; for the PNP transistor with negative polarity

I

CBO

I

CEO

I

EBO

h

FE

V

CEsat

V

I(off)

V

I(on)

R1 bias resistor 1 (input) 3.3 4.7 6.1 kΩ
R2/R1 bias resistor ratio 0.8 1 1.2
C

c

collector-base cut-off

VCB=50V; IE= 0 A - - 100 nA

current
collector-emitter

cut-off current

emitter-base cut-off

VCE=30V; IB=0A - - 1 µA

=30V; IB=0A;

V

CE

T

= 150 °C

j

--50µA

VEB=5V; IC= 0 A - - 0.9 mA

current
DC current gain VCE=5V; IC=10mA 30 - ­collector-emitter

IC= 10 mA; IB= 0.5 mA - - 150 mV

saturation voltage
off-state input voltage VCE=5V; IC= 100 µA - 1.1 0.5 V
on-state input voltage VCE= 0.3 V; IC= 20 mA 2.5 1.9 - V

collector capacitance VCB=10V; IE=ie=0A;

f = 1 MHz
TR1 (NPN) - - 2.5 pF
TR2 (PNP) - - 3 pF

PEMD15_PUMD15_3 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 03 — 2 September 2009 4 of 10

NXP Semiconductors

PEMD15; PUMD15

NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ

3

10

h

FE

2

10

10

1

−1

10

006aaa030

(1)
(2)
(3)

2

101

IC (mA)

10

VCE=5V
(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C
=25°C
= −40 °C

Fig 1. TR1 (NPN): DC current gain as a function of

collector current; typical values

1

V

CEsat

(V)

−1

10

−2

10

110

(1)
(2)
(3)

10

006aaa031

IC (mA)

IC/IB=20
(1) T
(2) T
(3) T

amb
amb
amb

= 100 °C
=25°C
= −40 °C

Fig 2. TR1 (NPN): Collector-emitter saturation

voltage as a function of collector current;

typical values

2

10

V

I(on)

(V)

(1)

(2)

1

(3)

−1

10

−1

10

006aaa032

101

IC (mA)

10

VCE= 0.3 V
(1) T
(2) T
(3) T

amb
amb
amb

= −40 °C
=25°C
= 100 °C

Fig 3. TR1 (NPN): On-state input voltage as a

function of collector current; typical values

10

V

I(off)

(V)

(1)

1

−1

2

10

(2)

(3)

−2

10

−1

006aaa033

IC (mA)

10110

VCE=5V
(1) T
(2) T
(3) T

amb
amb
amb

= −40 °C
=25°C
= 100 °C

Fig 4. TR1 (NPN): Off-state input voltage as a

function of collector current; typical values

PEMD15_PUMD15_3 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 03 — 2 September 2009 5 of 10

NXP Semiconductors

PEMD15; PUMD15

NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ

3

10

h

FE

2

10

10

1

−1

−10

006aaa213

(2)

(1)

(3)

2

−10−1
IC (mA)

−10

VCE= −5V
(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C
=25°C
= −40 °C

Fig 5. TR2 (PNP): DC current gain as a function of

collector current; typical values

−1

V

CEsat

(V)

−1

−10

−2

−10

−1 −10

(2)

−10

006aaa214

(1)

(3)

IC (mA)

IC/IB=20
(1) T
(2) T
(3) T

amb
amb
amb

= 100 °C
=25°C
= −40 °C

Fig 6. TR2 (PNP): Collector-emitter saturation

voltage as a function of collector current;

typical values

2

006aaa215

−10−1
IC (mA)

−10

V

I(on)

(V)

−10

−10

−1

−1

−10

(1)

(2)
(3)

−1

VCE= −0.3 V
(1) T
(2) T
(3) T

amb
amb
amb

= −40 °C
=25°C
= 100 °C

Fig 7. TR2 (PNP): On-state input voltage as a

function of collector current; typical values

−10

V

I(off)

(V)

(1)

−1

−1

2

−10

−10

−2

(2)
(3)

−1

006aaa216

IC (mA)

−10−1−10

VCE= −5V
(1) T
(2) T
(3) T

amb
amb
amb

= −40 °C
=25°C
= 100 °C

Fig 8. TR2 (PNP): Off-state input voltage as a

function of collector current; typical values

PEMD15_PUMD15_3 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 03 — 2 September 2009 6 of 10

NXP Semiconductors

8. Package outline

PEMD15; PUMD15

NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ

2.2

2.0

1.35

1.15

2.2

1.8

pin 1
index

132

0.65

1.3

0.45

465

0.15

0.3

0.2

1.1

0.8

0.25

0.10

1.7

1.5

1.7

1.3

1.5

1.1

06-03-16Dimensions in mm

Dimensions in mm

pin 1 index

123

0.5
1

Fig 9. Package outline SOT363 (SC-88) Fig 10. Package outline SOT666

9. Packing information

Table 9. Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

Type number Package Description Packing quantity

3000 4000 8000 10000

PEMD15 SOT666 2 mm pitch, 8 mm tape and reel - - -315 -

4 mm pitch, 8 mm tape and reel - -115 - -

[2]

PUMD15 SOT363 4 mm pitch, 8 mm tape and reel; T1

4 mm pitch, 8 mm tape and reel; T2

-115 - - -135

[3]

-125 - - -165

0.6

0.5

456

0.3

0.1

0.27

0.17

[1]

0.18

0.08

04-11-08

[1] For further information and the availability of packing methods, seeSection 12.
[2] T1: normal taping
[3] T2: reverse taping

PEMD15_PUMD15_3 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 03 — 2 September 2009 7 of 10

NXP Semiconductors

NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ

PEMD15; PUMD15

10. Revision history

Table 10. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PEMD15_PUMD15_3 20090902 Product data sheet - PEMD15_PUMD15_2
Modifications:

PEMD15_PUMD15_2 20050425 Product data sheet - PUMD15_1
PUMD15_1 20040204 Product specification - -

• This data sheet was changed to reflect the new company name NXP Semiconductors,

including new legal definitions and disclaimers. No changes were made to the technical
content.

• Figure 9 “Package outline SOT363 (SC-88)”: updated

PEMD15_PUMD15_3 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 03 — 2 September 2009 8 of 10

NXP Semiconductors

11. Legal information

11.1 Data sheet status

PEMD15; PUMD15

NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The productstatus of device(s) described inthis document may havechanged since this document waspublished andmay differin caseof multiple devices. The latest product status

information is available on the Internet at URL

[1][2]

Product status

11.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information includedherein and shallhave no liabilityfor the consequencesof
use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet
with thesame product typenumber(s) and title.A short data sheetis intended
for quickreference only and shouldnot be relied upon tocontain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.

11.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXPSemiconductors does not giveany representations or
warranties, expressed or implied, asto the accuracy or completenessof such
information and shall have no liability for the consequences of use of such
information.

Right to make changes — NXP Semiconductors reserves theright to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. Thisdocument supersedes and replaces all information supplied prior
to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental

[3]

http://www.nxp.com.

Definition

damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in
the Absolute MaximumRatings System of IEC 60134)may cause permanent
damage tothe device. Limitingvalues are stress ratingsonly and operationof
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditionsof commercial sale, as published
at

http://www.nxp.com/profile/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of anylicense under any copyrights,patents
or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.

Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.

11.4 Trademarks

Notice: Allreferenced brands,product names, servicenames and trademarks
are the property of their respective owners.

12. Contact information

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]

PEMD15_PUMD15_3 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 03 — 2 September 2009 9 of 10

NXP Semiconductors

NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ

13. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7

9 Packing information. . . . . . . . . . . . . . . . . . . . . . 7

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8

11 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9

11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9

11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

12 Contact information. . . . . . . . . . . . . . . . . . . . . . 9

13 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

PEMD15; PUMD15

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2009. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]

Date of release: 2 September 2009

Document identifier: PEMD15_PUMD15_3