Philips pemd13_pumd13 Datasheet

DATA SH EET

DISCRETE SEMICONDUCTORS

PEMD13; PUMD13

NPN/PNP resistor-equipped
transistors; R1 = 4.7 kΩ, R2 = 47 kΩ

Product data sheet
Supersedes data of 2001 Feb 27

2003 Oct 08

NXP Semiconductors Product data sheet

NPN/PNP resistor-equipped transistors;

PEMD13; PUMD13

R1 = 4.7 kΩ, R2 = 47 kΩ

FEATURES

• Built-in bias resistors

• Simplified circuit design

• Reduction of component count

• Reduced pick and place costs.

APPLICATIONS

• Low current peripheral driver

• Replacement of general purpose transis tor s in digital

applications

• Control of IC inputs.

PRODUCT OVERVIEW

TYPE

NUMBER

PHILIPS EIAJ

PACKAGE

MARKING CODE

PEMD13 SOT666 Z1 PEMB13 PEMH13
PUMD13 SOT363 SC-88 3*1

QUICK REFERENCE DATA

SYMBOL PARAMETER TYP. MAX. UNIT

V

CEO

collector-emitter

− 50 V

voltage

I

O

output current (DC) − 100 mA
TR1 NPN − − −
TR2 PNP − − −
R1 bias resistor 4.7 − kΩ
R2 bias resistor 47 − kΩ

DESCRIPTION

NPN/PNP resistor-equipped transistors (see “Simplified
outline, symbol and pinning” for package details).

PNP/PNP

(1)

COMPLEMENT

PUMB13 PUMH13

COMPLEMENT

NPN/NPN

Note

1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.

SIMPLIFIED OUTLINE, SYMBOL AND PINNING

PINNING

T YPE NUMBER SIMPLIFIED OUTLINE AND SYMBOL

PIN DESCRIPTION

PEMD13 1 emitter TR1

46

PUMD13 2 base TR1

Top view

5

123

654

R1 R2

TR1

R2

123

TR2

R1

MAM468

3 collector TR2
4 emitter TR2
5 base TR2
6 collector TR1

2003 Oct 08 2

NXP Semiconductors Product data sheet

NPN/PNP resistor-equipped transistors;

PEMD13; PUMD13

R1 = 4.7 kΩ, R2 = 47 kΩ

ORDERING INFORMATION

T YPE NUMBER

NAME DESCRIPTION VERSION

PEMD13 − plastic surface mounted package; 6 leads SOT666
PUMD13 − plastic surface mounted package; 6 leads SOT363

LIMITING VALUES

In accordance with the Absolu te Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per transistor; for the PNP transistor with negative polarity

V
V
V
V

CBO
CEO
EBO
I

collector-base voltage open emitter − 50 V
collector-emitter voltage open base − 50 V
emitter-base voltage open collector − 10 V
input voltage TR1

positive − +30 V
negative − −5 V

V

I

input voltage TR2

positive − +5 V

negative − −30 V
I
I
P

O
CM

tot

output current (DC) − 100 mA
peak collector current − 100 mA
total power dissipation T

amb

≤ 25 °C
SOT363 note 1 − 200 mW
SOT666 notes 1 and 2 − 200 mW

T
T
T

stg
j
amb

storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C

Per device

P

tot

total power dissipation T

amb

≤ 25 °C
SOT363 note 1 − 300 mW
SOT666 notes 1 and 2 − 300 mW

PACKAGE

Notes

1. Device mounted on an FR4 printed-circuit board, si ngle-sided copper, standard footprint.

2. Reflow soldering is the only recommended soldering method.

2003 Oct 08 3

NXP Semiconductors Product data sheet

NPN/PNP resistor-equipped transistors;

PEMD13; PUMD13

R1 = 4.7 kΩ, R2 = 47 kΩ

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Per transistor

R

th j-a

Per device

R

th j-a

Notes

1. Device mounted on an FR4 printed-circuit board, si ngle-sided copper, standard footprint.

2. Reflow soldering is the only recommended soldering method.

CHARACTERISTICS

T

= 25 °C unless otherwise specified.

amb

thermal resistance from junction to ambient T

amb

≤ 25 °C
SOT363 note 1 625 K/W
SOT666 notes 1 and 2 625 K/W

thermal resistance from junction to ambient T

amb

≤ 25 °C
SOT363 note 1 416 K/W
SOT666 notes 1 and 2 416 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per transistor; for the PNP transistor with negative polarity

I

CBO

I

CEO

collector-base cut-off curren t VCB = 50 V; IE = 0 − − 100 nA
collector-emitter cut-off current VCE = 30 V; IB = 0 − − 1 μA

VCE = 30 V; IB = 0; Tj = 150 °C − − 50 μA

I

EBO

h

FE

V

CEsat

V

i(off)

V

i(on)

emitter-base cut-off current VEB = 5 V; IC = 0 − − 170 μA
DC current gain VCE = 5 V; IC = 10 mA 100 − −
collector-emitter saturation voltage IC = 5 mA; IB = 0.25 mA − − 100 mV
input-off voltage IC = 100 μA; VCE = 5 V − 0.6 0.5 V
input-on voltage IC = 5 mA; VCE = 0.3 V 1.3 0.9 − V

R1 input resistor 3.3 4.7 6.1 kΩ

R2

------- ­R1

C

c

resistor ratio 8 10 12
collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz

TR1 (NPN) − − 2.5 pF
TR2 (PNP) − − 3 pF

2003 Oct 08 4

NXP Semiconductors Product data sheet

6

NPN/PNP resistor-equipped transistors;

PEMD13; PUMD13

R1 = 4.7 kΩ, R2 = 47 kΩ

PACKAGE OUTLINES

Plastic surface mounted package; 6 leads SOT66

D

S

YS

A

E

H

E

X

pin 1 index

123

e

DIMENSIONS (mm are the original dimensions)

UNIT b

mm

A

0.6

0.5

0.27

0.17

p

cD

0.18

0.08

1

1.7

1.5

b

p

e

E

1.3

1.1

456

A

w M

A

0 1 2 mm

scale

e

H

L

1.0

e

1

E

1.7

0.5

1.5

0.3

0.1

p

w

0.1y0.1

detail X

c

L

p

OUTLINE
VERSION

SOT666

REFERENCES

IEC JEDEC EIAJ

EUROPEAN

PROJECTION

ISSUE DATE

01-01-04
01-08-27

2003 Oct 08 5

NXP Semiconductors Product data sheet

Plastic surface mounted package; 6 leads SOT363

NPN/PNP resistor-equipped transistors;

PEMD13; PUMD13

R1 = 4.7 kΩ, R2 = 47 kΩ

y

D

56

4

E

H

E

AB

X

v

M

A

pin 1
index

132

e

1

DIMENSIONS (mm are the original dimensions)

A

UNIT

mm

A

1.1

0.8

max

0.1

1

b

p

0.30

0.25

0.20

0.10

b

p

e

cD

2.2

1.8

A

wB

M

0 1 2 mm

scale

H

e

e

E

1.35

1.15

1.3

0.65

E

1

2.2

0.45

2.0

0.15

Q

A

1

c

L

p

detail X

L

Qywv

p

0.25

0.15

0.2 0.10.2

OUTLINE
VERSION

SOT363 SC-88

IEC JEDEC EIAJ

REFERENCES

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28

2003 Oct 08 6

NXP Semiconductors Product data sheet

NPN/PNP resistor-equipped transistors;

PEMD13; PUMD13

R1 = 4.7 kΩ, R2 = 47 kΩ

DATA SHEET STATUS

DOCUMENT

STATUS

Objective data sheet Development This document contains data from the objective specification for product

Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product status of device(s) described in this document may have changed since this do cument was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at

http://www.nxp.com.

URL

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(1)

PRODUCT
STATUS

(2)

DEFINITION

development.

above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.

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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.

Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC
the device. Limiting values are stress ratings only an d
operation of the device at these or any other conditions

2003 Oct 08 7

60134) may cause permanent damage to

NXP Semiconductors

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Printed in The Netherlands R75/02/pp8 Date of release: 2003 Oct 08 Document order number: 9397 750 11863