Philips pemb30_pumb30 Datasheet

PEMB30; PUMB30

PNP/PNP double resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = open

Rev. 02 — 2 September 2009 Product data sheet

1. Product profile

1.1 General description

PNP/PNP double Resistor-Equipped Transistors (RET) in Surface-MountedDevice (SMD)
plastic packages

Table 1. Product overview

Type number Package NPN/PNP

PEMB30 SOT666 - PEMD30 PEMH30
PUMB30 SOT363 SC-88 PUMD30 PUMH30

1.2 Features

NXP JEITA

complement

NPN/NPN
complement

n 100 mA output current capability n Reduces component count
n Built-in bias resistors n Reduces pick and place costs
n Simplifies circuit design

1.3 Applications

n Low current peripheral driver n Cost-saving alternative for BC857BS

and BC857BV

n Control of IC inputs

1.4 Quick reference data

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

V

CEO

I

O

R1 bias resistor 1 (input) 1.54 2.2 2.86 kΩ

collector-emitter voltage open base - - −50 V
output current - - −100 mA

NXP Semiconductors

2. Pinning information

Table 3. Pinning

Pin Description Simplified outline Symbol

1 GND (emitter) TR1
2 input (base) TR1
3 output (collector) TR2
4 GND (emitter) TR2
5 input (base) TR2
6 output (collector) TR1

3. Ordering information

Table 4. Ordering information

Type number Package

PEMB30 - plastic surface-mounted package; 6 leads SOT666
PUMB30 SC-88 plastic surface-mounted package; 6 leads SOT363

PEMB30; PUMB30

PNP/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open

6 45

1 32

001aab555

Name Description Version

654

R1

TR1

1

TR2

R1

23

006aaa268

4. Marking

Table 5. Marking codes

Type number Marking code

PEMB30 2T
PUMB30 *B2

[1] * = -: made in Hong Kong

* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China

[1]

PEMB30_PUMB30_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 2 September 2009 2 of 10

NXP Semiconductors

5. Limiting values

Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

Per transistor

V

CBO

V

CEO

V

EBO

I

O

I

CM

P

tot

Per device

P

tot

T

stg

T

j

T

amb

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2] Reflow soldering is the only recommended soldering method.

PEMB30; PUMB30

PNP/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open

collector-base voltage open emitter - −50 V
collector-emitter voltage open base - −50 V
emitter-base voltage open collector - −5V
output current - −100 mA
peak collector current single pulse;

t

≤ 1ms

p

total power dissipation T

amb

≤ 25 °C
SOT363
SOT666

total power dissipation T

amb

≤ 25 °C
SOT363
SOT666

storage temperature −65 +150 °C
junction temperature - 150 °C
ambient temperature −65 +150 °C

- −100 mA

[1]

- 200 mW

[1][2]

- 200 mW

[1]

- 300 mW

[1][2]

- 300 mW

6. Thermal characteristics

Table 7. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

R

th(j-a)

thermal resistance from
junction to ambient

SOT363
SOT666

Per device

R

th(j-a)

thermal resistance from
junction to ambient

SOT363
SOT666

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.

PEMB30_PUMB30_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 2 September 2009 3 of 10

in free air

in free air

[1]

- - 625 K/W

[1][2]

- - 625 K/W

[1]

- - 416 K/W

[1][2]

- - 416 K/W

NXP Semiconductors

7. Characteristics

Table 8. Characteristics

T

amb

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

I

CBO

I

CEO

I

EBO

h

FE

V

CEsat

R1 bias resistor 1 (input) 1.54 2.2 2.86 kΩ
C

c

PEMB30; PUMB30

PNP/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open

=25°C unless otherwise specified.

collector-base cut-off
current

collector-emitter cut-off
current

emitter-base cut-off
current

DC current gain VCE= −5 V; IC= −20 mA 30 - ­collector-emitter

saturation voltage

collector capacitance VCB= −10 V; IE=ie=0A;

VCB= −50 V; IE=0A - - −100 nA

VCE= −30 V; IB=0A - - −1 µA

= −30 V; IB=0A;

V

CE

T

= 150 °C

j

--−50 µA

VEB= −5 V; IC=0A - - −100 nA

IC= −10 mA; IB= −0.5 mA - - −150 mV

--3pF

f=1MHz

500

h

FE

400

300

200

100

0

−10

−1

(1)

(2)

(3)

006aaa691

2

−10−1
IC (mA)

−10

VCE= −5V
(1) T
(2) T
(3) T

amb
amb
amb

= 100 °C
=25°C
= −40 °C

Fig 1. DC current gain as a function of collector

current; typical values

006aaa692

−10−1
IC (mA)

−10

V

−10

−10

CEsat

(V)

−1

−1

−2

−10

(1)
(2)
(3)

−1

IC/IB=20
(1) T
(2) T
(3) T

amb
amb
amb

= 100 °C
=25°C
= −40 °C

Fig 2. Collector-emitter saturation voltage as a

function of collector current; typical values

2

PEMB30_PUMB30_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 2 September 2009 4 of 10

NXP Semiconductors

8. Package outline

PEMB30; PUMB30

PNP/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open

2.2

2.0

1.35

1.15

2.2

1.8

pin 1
index

132

0.65

1.3

0.45

465

0.15

0.3

0.2

1.1

0.8

0.25

0.10

1.7

1.5

1.7

1.3

1.5

1.1

06-03-16Dimensions in mm

Dimensions in mm

pin 1 index

123

0.5
1

Fig 3. Package outline SOT363 (SC-88) Fig 4. Package outline SOT666

9. Packing information

Table 9. Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

Type number Package Description Packing quantity

PEMB30 SOT666 2 mm pitch, 8 mm tape and reel - - -315 -

4 mm pitch, 8 mm tape and reel - -115 - -

PUMB30 SOT363 4 mm pitch, 8 mm tape and reel; T1

4 mm pitch, 8 mm tape and reel; T2

[2]
[3]

0.6

0.5

456

0.3

0.1

0.27

0.17

[1]

0.18

0.08

04-11-08

3000 4000 8000 10000

-115 - - -135

-125 - - -165

[1] For further information and the availability of packing methods, seeSection 13.
[2] T1: normal taping
[3] T2: reverse taping

PEMB30_PUMB30_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 2 September 2009 5 of 10

NXP Semiconductors

10. Soldering

PEMB30; PUMB30

PNP/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open

2.65

solder lands

2.35

1.5

0.6

(4×)

0.5

(4×)

0.4 (2×)
solder resist

solder paste

0.5

(4×)

0.6

(4×)

0.6

(2×)

1.8

Dimensions in mm

Fig 5. Reflow soldering footprint SOT363 (SC-88)

1.5

4.5

1.5

1.3 1.3

2.45

5.3

0.3

occupied area

Dimensions in mm

sot363_fr

solder lands

2.5
solder resist

occupied area

Dimensions in mm

preferred transport

direction during soldering

sot363_fw

Fig 6. Wave soldering footprint SOT363 (SC-88)

PEMB30_PUMB30_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 2 September 2009 6 of 10

NXP Semiconductors

PEMB30; PUMB30

PNP/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open

2.75

2.45

2.1

1.6

0.538

1.075

1.72

0.55
(2×)

1.7

0.45
(4×)

0.5

(4×)

Reflow soldering is the only recommended soldering method.

Fig 7. Reflow soldering footprint SOT666

0.6

(2×)

0.65
(2×)

0.4

(6×)

0.25
(2×)

0.325
(4×)

0.3

(2×)

0.375
(4×)

solder lands

placement area

solder paste

occupied area

Dimensions in mm

sot666_fr

PEMB30_PUMB30_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 2 September 2009 7 of 10

NXP Semiconductors

PNP/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open

PEMB30; PUMB30

11. Revision history

Table 10. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PEMB30_PUMB30_2 20090902 Product data sheet - PEMB30_PUMB30_1
Modifications:

PEMB30_PUMB30_1 20060331 Product data sheet - -

• This data sheet was changed to reflect the new company name NXP Semiconductors,

including new legal definitions and disclaimers. No changes were made to the technical
content.

• Figure 3 “Package outline SOT363 (SC-88)”: updated

• Figure 5 “Reflow soldering footprint SOT363 (SC-88)”: updated

• Figure 6 “Wave soldering footprint SOT363 (SC-88)”: updated

• Figure 7 “Reflow soldering footprint SOT666”: updated

PEMB30_PUMB30_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 2 September 2009 8 of 10

NXP Semiconductors

12. Legal information

12.1 Data sheet status

PEMB30; PUMB30

PNP/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s)described in this document may havechanged since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL

[1][2]

Product status

12.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.

12.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or
warranties, expressedor implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.

Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental

[3]

http://www.nxp.com.

Definition

damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at

http://www.nxp.com/profile/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyanceor implication of any license under any copyrights, patents
or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.

Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.

12.4 Trademarks

Notice: All referencedbrands, product names, service names and trademarks
are the property of their respective owners.

13. Contact information

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]

PEMB30_PUMB30_2 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 02 — 2 September 2009 9 of 10

NXP Semiconductors

PNP/PNP double resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open

14. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 5

9 Packing information. . . . . . . . . . . . . . . . . . . . . . 5

10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8

12 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9

12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9

12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

13 Contact information. . . . . . . . . . . . . . . . . . . . . . 9

14 Contents. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

PEMB30; PUMB30

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2009. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]

Date of release: 2 September 2009

Document identifier: PEMB30_PUMB30_2