Philips PDTD114ET Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

handbook, halfpage

M3D088

PDTD114ET

NPN resistor-equipped transistor

Objective specification
Supersedes data of February 1995

1997 Sep 02

File under Discrete Semiconductors, SC04

Philips Semiconductors Objective specification

NPN resistor-equipped transistor PDTD114ET

FEATURES

• Built-in bias resistors R1 and R2
(typ. 10 kΩ each)

• Simplification of circuit design

• Reduces number of components

and board space.

APPLICATIONS

• Especially suitable for space
reduction in interface and driver
circuits

• Inverter circuit configurations
without use of external resistors.

DESCRIPTION

handbook, 4 columns

Top view

Fig.1 Simplified outline (SOT23) and symbol.

3

3

R1

1

R2

2

21

MAM097

NPN resistor-equipped transistor in a

MARKING

SOT23 plastic package.
PNP complement: PDTB114ET.

PINNING

PIN DESCRIPTION

1 base/input
2 emitter/ground

1

2

MGA893 - 1

3

Fig.2 Equivalent inverter

symbol.

TYPE

NUMBER

PDTD114ET p10

MARKING

CODE

3 collector/output

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V
I
I
P
h

CEO

O
CM

tot

FE

collector-emitter voltage open base −−50 V
output current (DC) −−500 mA
peak collector current −−500 mA
total power dissipation T

≤ 25 °C −−250 mW

amb

DC current gain IC= 50 mA; VCE=5V 56 −−

R1 input resistor 7 10 13 kΩ
R2

------- ­R1

resistor ratio 0.8 1 1.2

1997 Sep 02 2

Philips Semiconductors Objective specification

NPN resistor-equipped transistor PDTD114ET

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
V
V

I
I
P
T
T
T

O
CM

CBO
CEO
EBO
I

tot
stg
j
amb

collector-base voltage open emitter − 50 V
collector-emitter voltage open base − 50 V
emitter-base voltage open collector − 10 V
input voltage

positive − +40 V

negative −−10 V
output current (DC) − 500 mA
peak collector current − 500 mA
total power dissipation T

≤ 25 °C; note 1 − 250 mW

amb

storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C

Note

1. Transistor mounted on an FR4 printed-circuit board.

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-a

thermal resistance from junction to ambient note 1 500 K/W

Note

1. Transistor mounted on an FR4 printed-circuit board.

1997 Sep 02 3