DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
PDTC143ZT
NPN resistor-equipped transistor
Product specification |
|
1999 May 21 |
|||||
Supersedes data of 1998 May 19 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Philips Semiconductors |
Product specification |
|
|
NPN resistor-equipped transistor |
PDTC143ZT |
|
|
|
|
FEATURES
∙Built-in bias resistors R1 and R2 (typ. 4.7 kΩ and 47 kΩ respectively)
∙Simplification of circuit design
∙Reduces number of components and board space.
APPLICATIONS
∙Especially suitable for space reduction in interface and driver circuits
∙Inverter circuit configurations without use of external resistors.
DESCRIPTION
NPN resistor-equipped transistor in a SOT23 plastic package. PNP complement: PDTA143ZT.
MARKING
TYPE NUMBER |
MARKING CODE(1) |
PDTC143ZT |
18 |
|
|
Note
1.= p : Made in Hong Kong.= t : Made in Malaysia.
PINNING
PIN |
DESCRIPTION |
|
|
1 |
base/input |
|
|
2 |
emitter/ground |
|
|
3 |
collector/output |
|
|
dbook, 4 columns |
3 |
|
3 |
|
R1 |
|
1 |
|
R2 |
|
2 |
1 |
2 |
Top view |
MAM097 |
Fig.1 Simplified outline (SOT23) and symbol.
1 |
3 |
2
MGA893 - 1
Fig.2 Equivalent inverter symbol.
1999 May 21 |
2 |
Philips Semiconductors |
|
|
Product specification |
||
|
|
|
|
|
|
NPN resistor-equipped transistor |
|
PDTC143ZT |
|||
|
|
|
|
|
|
LIMITING VALUES |
|
|
|
|
|
In accordance with the Absolute Maximum Rating System (IEC 134). |
|
|
|
||
|
|
|
|
|
|
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
|
|
|
|
|
|
VCBO |
collector-base voltage |
open emitter |
− |
50 |
V |
VCEO |
collector-emitter voltage |
open base |
− |
50 |
V |
VEBO |
emitter-base voltage |
open collector |
− |
10 |
V |
VI |
input voltage |
|
|
|
|
|
positive |
|
− |
+30 |
V |
|
negative |
|
− |
−5 |
V |
|
|
|
|
|
|
IO |
output current (DC) |
|
− |
100 |
mA |
ICM |
peak collector current |
|
− |
100 |
mA |
Ptot |
total power dissipation |
Tamb ≤ 25 °C; note 1 |
− |
250 |
mW |
Tstg |
storage temperature |
|
−65 |
+150 |
°C |
Tj |
junction temperature |
|
− |
150 |
°C |
Tamb |
operating ambient temperature |
|
−65 |
+150 |
°C |
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL |
PARAMETER |
CONDITIONS |
VALUE |
UNIT |
|
|
|
|
|
Rth j-a |
thermal resistance from junction to ambient |
note 1 |
500 |
K/W |
Note |
|
|
|
|
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
TYP. |
MAX. |
UNIT |
|
|
|
|
|
|
|
ICBO |
collector cut-off current |
IE = 0; VCB = 50 V |
− |
− |
100 |
nA |
ICEO |
collector cut-off current |
IB = 0; VCE = 30 V |
− |
− |
1 |
μA |
|
|
IB = 0; VCE = 30 V; Tj = 150 °C |
− |
− |
50 |
μA |
IEBO |
emitter cut-off current |
IC = 0; VEB = 5 V |
− |
− |
170 |
μA |
hFE |
DC current gain |
IC = 10 mA; VCE = 5 V |
100 |
− |
− |
|
VCEsat |
collector-emitter saturation voltage |
IC = 5 mA; IB = 0.25 mA |
− |
− |
100 |
mV |
Vi(off) |
input-off voltage |
IC = 100 μA; VCE = 5 V |
− |
0.6 |
0.5 |
V |
Vi(on) |
input-on voltage |
IC = 5 mA; VCE = 0.3 V |
1.3 |
0.9 |
− |
V |
R1 |
input resistor |
|
3.3 |
4.7 |
6.1 |
kΩ |
|
|
|
|
|
|
|
R2 |
resistor ratio |
|
8 |
10 |
12 |
|
------- |
|
|
||||
R1 |
|
|
|
|
|
|
|
|
|
|
|
|
|
Cc |
collector capacitance |
IE = ie = 0; VCB = 10 V; f = 1 MHz |
− |
− |
2.5 |
pF |
1999 May 21 |
3 |
Loading...