Philips PDTC143XT Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D088
PDTC143XT
NPN resistor-equipped transistor
Product specification
1999 Apr 20
Philips Semiconductors Product specification
NPN resistor-equipped transistor PDTC143XT
FEATURES
• Built-in bias resistors R1 and R2
(typ. 4.7 kΩ and 10 kΩ
respectively)
• Simplification of circuit design
• Reduces number of components
and board space.
APPLICATIONS
• Especially suitable for space
reduction in interface and driver
circuits
• Inverter circuit configurations
without use of external resistors.
DESCRIPTION
NPN resistor-equipped transistor in a
SOT23 plastic package.
handbook, 4 columns
Top view
Fig.1 Simplified outline (SOT23) and symbol.
1
3
3
R1
1
R2
2
21
MAM097
MARKING
TYPE
NUMBER
3
PDTC143XT ∗32
MARKING
(1)
CODE
PINNING
PIN DESCRIPTION
1 base/input
2 emitter/ground
2
MGA893 - 1
Fig.2 Equivalent inverter
symbol.
Note
1. ∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
3 collector/output
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
V
CBO
CEO
EBO
I
collector-base voltage open emitter − 50 V
collector-emitter voltage open base − 50 V
emitter-base voltage open collector − 10 V
input voltage
positive − 20 V
negative −−7V
I
O
I
CM
P
tot
T
stg
T
j
T
amb
output current (DC) − 100 mA
peak collector current − 100 mA
total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Refer to SOT23 standard mounting conditions.
1999 Apr 20 2
Philips Semiconductors Product specification
NPN resistor-equipped transistor PDTC143XT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Refer to SOT23 standard mounting conditions.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
V
i(off)
V
i(on)
R1 input resistor 3.3 4.7 6.1 kΩ
R2
-------R1
C
c
thermal resistance from junction to ambient note 1 500 K/W
collector cut-off current IE= 0; VCB=50V −−100 nA
collector cut-off current IB= 0; VCE=30V −−1µA
I
= 0; VCE=30V; Tj= 150 °C −−50 µA
B
emitter cut-off current IC= 0; VEB=5V −−600 µA
DC current gain IC= 10 mA; VCE=5V 50 −−
collector-emitter saturation voltage IC= 10 mA; IB= 0.5 mA −−100 mV
input-off voltage IC= 100 µA; VCE=5V −−0.3 V
input-on voltage IC= 20 mA; VCE= 0.3 V 2.5 −−V
resistor ratio 1.7 2.1 2.6
collector capacitance IE=ie= 0; VCB=10V; f=1MHz −−2.5 pF
1999 Apr 20 3
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