Philips PDTC143TT Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
k, halfpage
M3D088
PDTC143TT
NPN resistor-equipped transistor
Product specification
Supersedes data of 1998 May 29
1999 May 21
Philips Semiconductors Product specification
NPN resistor-equipped transistor PDTC143TT
FEATURES
• Built-in bias resistor R1 (typ. 4.7 kΩ)
• Simplification of circuit design
• Reduces number of components and board space.
APPLICATIONS
• Especially suitable for space reduction in interface and
driver circuits
• Inverter circuit configurations without use of an external
resistor.
DESCRIPTION
NPN resistor-equipped transistor in a SOT23 plastic
package.
MARKING
TYPE NUMBER MARKING CODE
(1)
PDTC143TT ∗33
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
PINNING
PIN DESCRIPTION
1 base/input
2 emitter/ground
3 collector/output
ok, 4 columns
Top view
3
1
21
MAM360
Fig.1 Simplified outline (SOT23) and symbol.
1
3
3
R1
2
MGA893 - 1
2
Fig.2 Equivalent inverter symbol.
1999 May 21 2
Philips Semiconductors Product specification
NPN resistor-equipped transistor PDTC143TT
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
O
I
CM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
collector-base voltage open emitter − 50 V
collector-emitter voltage open base − 50 V
emitter-base voltage open collector − 5V
output current (DC) − 100 mA
peak collector current − 100 mA
total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 500 K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
collector cut-off current IE= 0; VCB=50V −−100 nA
collector cut-off current IB= 0; VCE=30V −−1µA
= 0; VCE=30V; Tj= 150 °C −−50 µA
I
B
emitter cut-off current IC= 0; VEB=5V −−100 nA
DC current gain IC= 1 mA; VCE= 5 V 200 −−
collector-emitter saturation
IC= 5 mA; IB= 0.25 mA −−100 mV
voltage
R1 input resistor 3.3 4.7 6.1 kΩ
C
c
collector capacitance IE=ie= 0; VCB=10V; f=1MHz −−2.5 pF
1999 May 21 3
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