Philips PDTC124XEF Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D425
PDTC124XEF
NPN resistor-equipped transistor
Preliminary specification
Supersedes data of 1998 Nov 11
1999 May 18
Philips Semiconductors Preliminary specification
NPN resistor-equipped transistor PDTC124XEF
FEATURES
• Power dissipation comparable to SOT23
• Built-in bias resistors R1 and R2 (typ. 22 kΩ and 47 kΩ
respectively)
• Simplification of circuit design
• Reduces number of components and board space.
APPLICATIONS
• Especially suitable for space reduction in interface and
driver circuits
• Inverter circuit configurations without use of external
resistors.
DESCRIPTION
NPN resistor-equipped transistor encapsulated in an ultra
small SC-89 (SOT490) plastic SMD package.
PNP complement: PDTA124XEF.
handbook, halfpage
12
Top view
Fig.1 Simplified outline (SC-89; SOT490) and
3
symbol.
MAM412
R1
1
R2
3
2
MARKING
TYPE NUMBER MARKING CODE
PDTC124XEF 32
PINNING
PIN DESCRIPTION
1 base/input
2 emitter/ground
3 collector/output
1
2
MGA893 - 1
3
Fig.2 Equivalent inverter symbol.
1999 May 18 2
Philips Semiconductors Preliminary specification
NPN resistor-equipped transistor PDTC124XEF
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
V
I
I
P
T
T
T
O
CM
CBO
CEO
EBO
I
tot
stg
j
amb
collector-base voltage open emitter − 50 V
collector-emitter voltage open base − 50 V
emitter-base voltage open collector − 10 V
input voltage
positive − +40 V
negative −−10 V
output current (DC) − 100 mA
peak collector current − 100 mA
total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Refer to SC-89 (SOT490) standard mounting conditions.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS MAX. UNIT
R
th j-a
thermal resistance from junction to ambient in free air; note 1 500 K/W
Note
1. Refer to SC-89 (SOT490) standard mounting conditions.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
collector cut-off current IE= 0; VCB=50V −−100 nA
collector cut-off current IB= 0; VCE=30V −−1µA
= 0; VCE=30V; Tj= 150 °C −−50 µA
I
B
emitter cut-off current IC= 0; VEB=5V −−120 µA
DC current gain IC= 5 mA; VCE=5V 80 −−
collector-emitter saturation
IC= 10 mA; IB= 0.5 mA −−150 mV
voltage
V
V
i(off)
i(on)
input-off voltage IC= 100 µA; VCE=5V − 0.9 0.5 V
input-on voltage IC= 2 mA; VCE= 300 mV 2 1.1 − V
R1 input resistor 15.4 22 28.6 kΩ
R2
-------R1
C
c
resistor ratio 1.7 2.1 2.6
collector capacitance IE=ie= 0; VCB=10V; f=1MHz −−2.5 pF
1999 May 18 3
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