Philips PDTC123JEF Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D425
PDTC123JEF
NPN resistor-equipped transistor
Preliminary specification
1999 May 27
Philips Semiconductors Preliminary specification
NPN resistor-equipped transistor PDTC123JEF
FEATURES
• Built-in bias resistors R1 and R2
(typ. 2.2 kΩ and 47 kΩ
respectively)
• Simplification of circuit design
• Reduces number of components
and board space.
APPLICATIONS
• Especially suitable for space
reduction in interface and driver
circuits
• Inverter circuit configurations
without use of external resistors.
DESCRIPTION
NPN resistor-equipped transistor in
an SC-89 (SOT490) plastic package.
handbook, halfpage
12
Top view
Fig.1 Simplified outline (SC-89; SOT490) and symbol.
1
3
R1
1
R2
MAM412
3
2
MARKING
TYPE
NUMBER
3
PDTC123JEF 28
MARKING
CODE
PINNING
MGA893 - 1
2
PIN DESCRIPTION
1 base/input
2 emitter/ground
Fig.2 Equivalent inverter
symbol.
3 collector/output
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
V
CBO
CEO
EBO
I
collector-base voltage open emitter − 50 V
collector-emitter voltage open base − 50 V
emitter-base voltage open collector − 10 V
input voltage
positive − +12 V
negative −−5V
I
O
I
CM
P
tot
T
stg
T
j
T
amb
output current (DC) − 100 mA
peak collector current − 100 mA
total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Refer to SC-89 (SOT490) standard mounting conditions.
1999 May 27 2
Philips Semiconductors Preliminary specification
NPN resistor-equipped transistor PDTC123JEF
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Refer to SC-89 (SOT490) standard mounting conditions.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
V
i(off)
V
i(on)
R1 input resistor 1.54 2.2 2.86 kΩ
R2
-------R1
C
c
thermal resistance from junction to ambient note 1 500 K/W
collector cut-off current IE= 0; VCB=50V −−100 nA
collector cut-off current IB= 0; VCE=30V −−1µA
I
= 0; VCE=30V; Tj= 150 °C −−50 µA
B
emitter cut-off current IC= 0; VEB=5V −−180 µA
DC current gain IC= 10 mA; VCE= 5 V 100 −−
collector-emitter saturation voltage IC= 5 mA; IB= 0.25 mA −−100 mV
input-off voltage IC= 100 µA; VCE=5V − 0.6 0.5 V
input-on voltage IC= 5 mA; VCE= 0.3 V 1.1 0.75 − V
resistor ratio 17 21 26
collector capacitance IE=ie= 0; VCB=10V; f=1MHz −−2.5 pF
1999 May 27 3
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