Philips PDTC123ET Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D088
PDTC123ET
NPN resistor-equipped transistor
Product specification
Supersedes data of 1998 May 08
1999 May 21
Philips Semiconductors Product specification
NPN resistor-equipped transistor PDTC123ET
FEATURES
• Built-in bias resistors R1 and R2 (typ. 2.2 kΩ each)
• Simplification of circuit design
• Reduces number of components and board space.
3
3
R1
1
R2
2
21
MAM097
APPLICATIONS
• Especially suitable for space reduction in interface and
driver circuits
• Inverter circuit configurations without use of external
resistors.
DESCRIPTION
NPN resistor-equipped transistor in a SOT23 plastic
package. PNP complement: PDTA123ET.
, 4 columns
Top view
PINNING
PIN DESCRIPTION
1 base/input
2 emitter/ground
3 collector/output
MARKING
TYPE NUMBER MARKING CODE
PDTC123ET ∗26
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
(1)
Fig.1 Simplified outline (SOT23) and symbol.
1
2
MGA893 - 1
3
Fig.2 Equivalent inverter symbol.
1999 May 21 2
Philips Semiconductors Product specification
NPN resistor-equipped transistor PDTC123ET
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
V
I
I
P
T
T
T
O
CM
CBO
CEO
EBO
I
tot
stg
j
amb
collector-base voltage open emitter − 50 V
collector-emitter voltage open base − 50 V
emitter-base voltage open collector − 10 V
input voltage
positive − +12 V
negative −−10 V
output current (DC) − 100 mA
peak collector current − 100 mA
total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 500 K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
V
i(off)
V
i(on)
collector cut-off current IE= 0; VCB=50V −−100 nA
collector cut-off current IB= 0; VCE=30V −−1µA
I
= 0; VCE= 30 V; Tj= 150 °C −−50 µA
B
emitter cut-off current IC= 0; VEB=5V −−2mA
DC current gain IC= 20 mA; VCE=5V 30 −−
collector-emitter saturation voltage IC= 10 mA; IB= 0.5 mA −−150 mV
input-off voltage IC= 1 mA; VCE=5V − 1.2 0.5 V
input-on voltage IC= 20 mA; VCE= 0.3 V 2 1.6 − V
R1 input resistor 1.54 2.2 2.86 kΩ
R2
------- R1
C
c
resistor ratio 0.8 1 1.2
collector capacitance IE=ie= 0; VCB=10V;
−−2.5 pF
f = 1 MHz
1999 May 21 3
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