Philips pdtc115t_ser Datasheet

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Page 1

PDTC115T series

NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = open

Rev. 04 — 17 February 2005 Product data sheet

1. Product proﬁle

1.1 General description

NPN resistor-equipped transistors.

Table 1: Product overview

Type number Package PNP complement

PDTC115TE SOT416 SC-75 PDTA115TE PDTC115TK SOT346 SC-59A PDTA115TK PDTC115TM SOT883 SC-101 PDTA115TM PDTC115TS PDTC115TT SOT23 - PDTA115TT PDTC115TU SOT323 SC-70 PDTA115TU

Philips JEITA

[1]

SOT54 (TO-92) SC-43A PDTA115TS

[1] Also available in SOT54A and SOT54 variant packages (seeSection 2).

1.2 Features

■ Built-in bias resistor ■ Reduces component count

■ Simpliﬁes circuit design ■ Reduces pick and place costs

1.3 Applications

■ General-purpose switching and

ampliﬁcation

■ Inverter and interface circuits

■ Circuit drivers

1.4 Quick reference data

Table 2: Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

CEO

R1 bias resistor 1 (input) 70 100 130 kΩ

collector-emitter voltage open base - - 50 V output current (DC) - - 100 mA

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Philips Semiconductors

2. Pinning information

Table 3: Pinning

Pin Description Simpliﬁed outline Symbol

SOT54

1 input (base) 2 output (collector) 3 GND (emitter)

SOT54A

1 input (base) 2 output (collector) 3 GND (emitter)

PDTC115T series

NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = open

006aaa218

001aab347

001aab348

1 2 3

SOT54 variant

1 input (base) 2 output (collector) 3 GND (emitter)

SOT23, SOT323, SOT346, SOT416

1 input (base) 2 GND (emitter) 3 output (collector)

SOT883

1 input (base) 2 GND (emitter) 3 output (collector)

1 2 3

001aab447

006aaa144

1 2

Transparent

top view

006aaa218

sym012

Product data sheet Rev. 04 — 17 February 2005 2 of 10

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Philips Semiconductors

3. Ordering information

Table 4: Ordering information

Type number Package

PDTC115TE SC-75 plastic surface mounted package; 3 leads SOT416 PDTC115TK SC-59A plastic surface mounted package; 3 leads SOT346 PDTC115TM SC-101 leadless ultra small plastic package; 3 solder lands;

PDTC115TS

PDTC115TT - plastic surface mounted package; 3 leads SOT23 PDTC115TU SC-70 plastic surface mounted package; 3 leads SOT323

[1] Also available in SOT54A and SOT54 variant packages (seeSection 2 and Section 9).

[1]

4. Marking

PDTC115T series

NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = open

Name Description Version

SOT883

body 1.0 × 0.6 × 0.5 mm

SC-43A plastic single-ended leaded (through hole) package;

3 leads

SOT54

Table 5: Marking codes

Type number Marking code

PDTC115TE 17 PDTC115TK 28 PDTC115TM G5 PDTC115TS TC115T PDTC115TT *AK PDTC115TU *17

[1] * = -: made in Hong Kong

* = p: made in Hong Kong * = t: made in Malaysia * = W: made in China

[1]

Product data sheet Rev. 04 — 17 February 2005 3 of 10

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Philips Semiconductors

5. Limiting values

Table 6: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

CBO

CEO

EBO

tot

stg

amb

[1] Refer to standard mounting conditions. [2] Reﬂow soldering is the only recommended soldering method. [3] Refer to SOT883 standard mounting conditions; FR4 printed-circuit board with 60 µm copper strip line.

PDTC115T series

NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = open

collector-base voltage open emitter - 50 V collector-emitter voltage open base - 50 V emitter-base voltage open collector - 5 V output current (DC) - 100 mA peak collector current - 100 mA total power dissipation

SOT416 T SOT346 T SOT883 T SOT54 T SOT23 T SOT323 T

amb amb amb amb amb amb

≤ 25 °C ≤ 25 °C ≤ 25 °C ≤ 25 °C ≤ 25 °C ≤ 25 °C

storage temperature −65 +150 °C junction temperature - 150 °C ambient temperature −65 +150 °C

[1]

- 150 mW

[1]

- 250 mW

[2] [3]

- 250 mW

[1]

- 500 mW

[1]

- 250 mW

[1]

- 200 mW

6. Thermal characteristics

Table 7: Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

th(j-a)

thermal resistance from junction to ambient

SOT416 SOT346 SOT883 SOT54 SOT23 SOT323

in free air

[1]

- - 833 K/W

[1]

- - 500 K/W

[2] [3]

- - 500 K/W

[1]

- - 250 K/W

[1]

- - 500 K/W

[1]

- - 625 K/W

Product data sheet Rev. 04 — 17 February 2005 4 of 10

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Philips Semiconductors

PDTC115T series

NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = open

7. Characteristics

Table 8: Characteristics

=25°C unless otherwise speciﬁed.

amb

Symbol Parameter Conditions Min Typ Max Unit

CBO

collector-base cut-off current

CEO

collector-emitter cut-off current

EBO

emitter-base cut-off

current h V

CEsat

DC current gain VCE=5V; IC= 1 mA 100 - -

collector-emitter

saturation voltage R1 bias resistor 1 (input) 70 100 130 kΩ C

collector capacitance IE=ie = 0 A; VCB=10V;

VCB=50V; IE= 0 A - - 100 nA

VCE=30V; IB=0A --1µA

=30V; IB=0A;

= 150 °C

--50µA

VEB=5V; IC= 0 A - - 100 nA

IC= 5 mA; IB= 0.25 mA - - 150 mV

- - 2.5 pF

f=1MHz

−1

(1)

(2)

(3)

006aaa058

101

IC (mA)

VCE = 5 V (1) T (2) T (3) T

= 100 °C

amb

= 25 °C

amb

= −40 °C

amb

Fig 1. DC current gain as a function of collector

current; typical values

006aaa059

101

IC (mA)

CEsat

(V)

−1

(1) (2) (3)

−2

−1

IC/IB = 20 (1) T (2) T (3) T

= 100 °C

amb

= 25 °C

amb

= −40 °C

amb

Fig 2. Collector-emitter saturation voltage as a

function of collector current; typical values

Product data sheet Rev. 04 — 17 February 2005 5 of 10

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Philips Semiconductors

8. Package outline

PDTC115T series

NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = open

1.3

1.0

0.26

0.10

1.75

1.45

1.8

1.4

0.9

0.7

0.30

0.15

0.45

0.15

0.95

0.60

0.25

0.10

3.1

2.7

3.0

1.7

2.5

1.3

1.9

04-11-04Dimensions in mm

0.50

0.35

0.6

0.2

Fig 3. Package outline SOT416 (SC-75) Fig 4. Package outline SOT346 (SC-59A/TO-236)

0.62

0.30

0.22

0.30

0.22

0.55

0.47

0.65

0.50

0.46

1.02

0.95

4.2

3.6

4.8

4.4

0.45

0.38

0.48

0.40

1 2

1.27

04-11-11Dimensions in mm

2.54

0.20

0.12

0.35 03-04-03Dimensions in mm

5.2

5.0

14.5

12.7 04-11-16Dimensions in mm

Fig 5. Package outline SOT883 (SC-101) Fig 6. Package outline SOT54 (SC-43A/TO-92)

0.45

0.38

1.27

0.48

0.40

1 2 3

1.27

2.54

05-01-10Dimensions in mm

4.2

3.6

4.8

4.4

5.2

5.0

3 max

14.5

12.7

0.45

0.38

0.48

0.40

5.08

2.54

04-06-28Dimensions in mm

4.2

3.6

4.8

4.4

5.2

5.0

2.5

max

14.5

12.7

Fig 7. Package outline SOT54A Fig 8. Package outline SOT54 variant

Product data sheet Rev. 04 — 17 February 2005 6 of 10

Page 7

Philips Semiconductors

PDTC115T series

NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = open

2.5

2.1

3.0

2.8

0.45

0.15

1.4

1.2

0.48

1.9

0.38

1.1

0.9

0.15

0.09

2.2

1.8

0.4

0.3

0.45

0.15

2.2

1.35

2.0

1.15

1.3

04-11-04Dimensions in mm

1.1

0.8

0.25

0.10

Fig 9. Package outline SOT23 (TO-236AB) Fig 10. Package outline SOT323 (SC-70)

9. Packing information

Table 9: Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

Type number Package Description Packing quantity

PDTC115TE SOT416 4 mm pitch, 8 mm tape and reel -115 - -135 PDTC115TK SOT346 4 mm pitch, 8 mm tape and reel -115 - -135 PDTC115TM SOT883 2 mm pitch, 8 mm tape and reel - - -315 PDTC115TS SOT54 bulk, straight leads - -412 PDTC115TS SOT54A tape and reel, wide pitch - - -116 PDTC115TS SOT54A tape ammopack, wide pitch - - -126 PDTC115TS SOT54 variant bulk, delta pinning - -112 PDTC115TT SOT23 4 mm pitch, 8 mm tape and reel -215 - -235 PDTC115TU SOT323 4 mm pitch, 8 mm tape and reel -115 - -135

[1]

3000 5000 10000

04-11-04Dimensions in mm

[1] For further information and the availability of packing methods, seeSection 14.

Product data sheet Rev. 04 — 17 February 2005 7 of 10

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Philips Semiconductors

NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = open

PDTC115T series

10. Revision history

Table 10: Revision history

Document ID Release date Data sheet status Change notice Doc. number Supersedes

PDTC115T_SER_4 20050217 Product data sheet - 9397 750 14021 PDTC115TT_3 Modiﬁcations

PDTC115TT_3 20040727 Product data sheet - 9397 750 13505 PDTC115TT_2 PDTC115TT_2 20040510 Objective data sheet - 9397 750 13206 PDTC115TT_1 PDTC115TT_1 20040305 Objective data sheet - 9397 750 12554 -

• The types PDTC115TE, PDTC115TK, PDTC115TM, PDTC115TS and PDTC115TU were

added.

• Table 1 “Product overview” added

• Figure 1 and 2 added

• Section 9 “Packing information” added

Product data sheet Rev. 04 — 17 February 2005 8 of 10

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Philips Semiconductors

11. Data sheet status

PDTC115T series

NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = open

Level Data sheet status

I Objective data Development This data sheet contains data from the objective speciﬁcation for product development. Philips

II Preliminary data Qualiﬁcation This data sheet contains data from the preliminary speciﬁcation. Supplementary data will be published

III Product data Production This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the

[1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

[1]

Product status

12. Deﬁnitions

Short-form speciﬁcation — The data in a short-form speciﬁcation is

extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.

Limiting values deﬁnition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the speciﬁed use without further testing or modiﬁcation.

[2] [3]

Deﬁnition

Semiconductors reserves the right to change the speciﬁcation in any manner without notice.

at a later date. Philips Semiconductors reserves the right to change the speciﬁcation without notice, in order to improve the design and supply the best possible product.

right to make changes at any time in order to improve the design, manufacturing and supply.Relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).

13. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, andmakes no representations or warranties that these productsare free from patent, copyright, or mask work right infringement, unless otherwise speciﬁed.

14. Contact information

For additional information, please visit: http://www.semiconductors.philips.com For sales ofﬁce addresses, send an email to: [email protected]

Product data sheet Rev. 04 — 17 February 2005 9 of 10

Page 10

Philips Semiconductors

NPN resistor-equipped transistors; R1 = 100 kΩ, R2 = open

15. Contents

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 3

4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4

6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6

9 Packing information. . . . . . . . . . . . . . . . . . . . . . 7

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8

11 Data sheet status. . . . . . . . . . . . . . . . . . . . . . . . 9

12 Deﬁnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

13 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

14 Contact information . . . . . . . . . . . . . . . . . . . . . 9

PDTC115T series

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

Published in The Netherlands

Date of release: 17 February 2005

Document number: 9397 750 14021