Philips PDTC115EE Technical data
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D173
PDTC115EE
NPN resistor-equipped transistor;
R1 = 100 kΩ, R2 = 100 kΩ
Product specification 2002 May 08
Philips Semiconductors Product specification
NPN resistor-equipped transistor;
R1 = 100 kΩ, R2 = 100 kΩ
FEATURES
• Built-in bias resistorsR1 and R2 (typically 100 kΩ each)
• Simplification of circuit design
• Reduces number of components and required
PCB area.
APPLICATIONS
• Especially suitable for space reduction in interface and
driver circuits
• Inverter circuit configuration without use of external
resistors.
DESCRIPTION
NPN resistor-equipped transistor in a SOT416 (SC-75)
plastic package.
MARKING
TYPE NUMBER MARKING CODE
PDTC115EE 46
PDTC115EE
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
I
O
R1 bias resistor 100 kΩ
R2 bias resistor 100 kΩ
PINNING
PIN DESCRIPTION
1 base/input
2 emitter/ground
3 collector/output
handbook, halfpage
collector-emitter voltage 50 V
output current (DC) 20 mA
3
12
Top view
R1
1
R2
3
2
MAM346
Fig.1 Simplified outline (SOT416) and symbol.
1
2
MGA893 - 1
3
Fig.2 Equivalent inverter symbol.
2002 May 08 2
Philips Semiconductors Product specification
NPN resistor-equipped transistor;
PDTC115EE
R1 = 100 kΩ, R2 = 100 kΩ
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
V
i
I
O
I
CM
P
tot
T
stg
T
j
T
amb
Note
1. Refer to standard SOT416 (SC-75) mounting conditions.
collector-base voltage open emitter − 50 V
collector-emitter voltage open base − 50 V
emitter-base voltage open collector − 10 V
input voltage
positive − +40 V
negative −−10 V
output current (DC) − 20 mA
peak collector current − 100 mA
total power dissipation T
≤ 25 °C; note 1 − 150 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to
in free air; note 1 833 K/W
ambient
Note
1. Refer to standard SOT416 (SC-75) mounting conditions.
CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
CEO
collector-base cut-off current VCB= 50 V; IE=0 −−100 nA
collector-emitter cut-off current VCE= 30 V; IB=0 −−1 µA
VCE= 30 V; IB= 0; Tj= 150 °C −−50 µA
I
EBO
h
V
V
V
FE
CEsat
i(off)
i(on)
emitter-base cut-off current VEB=5V; IC=0 −−50 µA
DC current gain VCE=5V; IC=5mA 80 −−
collector-emitter saturation voltage IC= 300 mA; IB=10mA −−150 mV
input off voltage VCE=5V; IC= 100 µA −−0.5 V
input on voltage VCE= 0.3 V; IC= 1 mA 3 −−V
R1 input resistor 70 100 130 kΩ
R2
------- R1
C
c
resistor ratio 0.8 1 1.2
collector capacitance IE=ie= 0; VCB=10V;
−−2.5 pF
f = 1 MHz
2002 May 08 3
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