Philips PDTC115EE Technical data

DISCRETE SEMICONDUCTORS

DATA SHEET

M3D173

PDTC115EE

NPN resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ

Product specification			2002 May 08

Philips Semiconductors	Product specification

NPN resistor-equipped transistor;

Ω Ω PDTC115EE

R1 = 100 k , R2 = 100 k

FEATURES

∙Built-in bias resistors R1 and R2 (typically 100 kΩ each)

∙Simplification of circuit design

∙Reduces number of components and required PCB area.

APPLICATIONS

∙Especially suitable for space reduction in interface and driver circuits

∙Inverter circuit configuration without use of external resistors.

DESCRIPTION

NPN resistor-equipped transistor in a SOT416 (SC-75) plastic package.

MARKING

TYPE NUMBER	MARKING CODE
PDTC115EE	46

QUICK REFERENCE DATA

SYMBOL	PARAMETER	MAX.	UNIT
VCEO	collector-emitter voltage	50	V
IO	output current (DC)	20	mA
R1	bias resistor	100	kΩ
R2	bias resistor	100	kΩ
PINNING
PIN	DESCRIPTION
1	base/input
2	emitter/ground
3	collector/output

handbook, halfpage	3		3
			R1
			1
			R2
1		2	2
Top view			MAM346

Fig.1 Simplified outline (SOT416) and symbol.

1

3

2

MGA893 - 1

Fig.2 Equivalent inverter symbol.

2002 May 08

2

Philips Semiconductors	Product specification

NPN resistor-equipped transistor;

Ω Ω PDTC115EE R1 = 100 k , R2 = 100 k

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VCBO	collector-base voltage	open emitter	−	50	V
VCEO	collector-emitter voltage	open base	−	50	V
VEBO	emitter-base voltage	open collector	−	10	V
Vi	input voltage
	positive		−	+40	V
	negative		−	−10	V
IO	output current (DC)		−	20	mA
ICM	peak collector current		−	100	mA
Ptot	total power dissipation	Tamb ≤ 25 °C; note 1	−	150	mW
Tstg	storage temperature		−65	+150	°C
Tj	junction temperature		−	150	°C
Tamb	operating ambient temperature		−65	+150	°C

Note

1. Refer to standard SOT416 (SC-75) mounting conditions.

THERMAL CHARACTERISTICS

SYMBOL	PARAMETER	CONDITIONS	VALUE	UNIT
Rth j-a	thermal resistance from junction to	in free air; note 1	833	K/W
	ambient
Note

1. Refer to standard SOT416 (SC-75) mounting conditions.

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
ICBO	collector-base cut-off current	VCB = 50 V; IE = 0	−	−	100	nA
ICEO	collector-emitter cut-off current	VCE = 30 V; IB = 0	−	−	1	μA
		VCE = 30 V; IB = 0; Tj = 150 °C	−	−	50	μA
IEBO	emitter-base cut-off current	VEB = 5 V; IC = 0	−	−	50	μA
hFE	DC current gain	VCE = 5 V; IC = 5 mA	80	−	−
VCEsat	collector-emitter saturation voltage	IC = 300 mA; IB = 10 mA	−	−	150	mV
Vi(off)	input off voltage	VCE = 5 V; IC = 100 μA	−	−	0.5	V
Vi(on)	input on voltage	VCE = 0.3 V; IC = 1 mA	3	−	−	V
R1	input resistor		70	100	130	kΩ
R2	resistor ratio		0.8	1	1.2
-------
R1
Cc	collector capacitance	IE = ie = 0; VCB = 10 V;	−	−	2.5	pF
		f = 1 MHz

2002 May 08

3