Philips PDTC114YE Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D173
PDTC114YE
NPN resistor-equipped transistor
Product specification
Supersedes data of 1998 May 19
1999 May 18
Philips Semiconductors Product specification
NPN resistor-equipped transistor PDTC114YE
FEATURES
• Built-in bias resistors R1 and R2 (typ. 10 kΩ and 47 kΩ
respectively)
• Simplification of circuit design
• Reduces number of components and board space.
APPLICATIONS
• Especially suitable for space reduction in interface and
driver circuits
• Inverter circuit configurations without use of external
resistors.
DESCRIPTION
NPN resistor-equipped transistor in a SC-75 (SOT416)
plastic package.
MARKING
TYPE NUMBER MARKING CODE
PDTC114YE 33
PINNING
PIN DESCRIPTION
1 base/input
2 emitter/ground
3 collector/output
handbook, halfpage
12
Top view
3
R1
1
R2
Fig.1 Simplified outline (SC-75; SOT416) and
symbol.
1
2
MGA893 - 1
3
3
2
MAM346
Fig.2 Equivalent inverter symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
V
CBO
CEO
EBO
I
collector-base voltage open emitter − 50 V
collector-emitter voltage open base − 50 V
emitter-base voltage open collector − 10 V
input voltage
positive − +40 V
negative −−6V
I
O
I
CM
P
tot
T
stg
T
j
T
amb
output current (DC) − 100 mA
peak collector current − 100 mA
total power dissipation T
≤ 25 °C; note 1 − 150 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 May 18 2
Philips Semiconductors Product specification
NPN resistor-equipped transistor PDTC114YE
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
V
i(off)
V
i(on)
R1 input resistor 7 10 13 kΩ
R2
-------R1
C
c
thermal resistance from junction to ambient note 1 833 K/W
collector cut-off current IE= 0; VCB=50V −−100 nA
collector cut-off current IB= 0; VCE=30V −−1µA
I
= 0; VCE=30V; Tj= 150 °C −−50 µA
B
emitter cut-off current IC= 0; VEB=5V −−150 µA
DC current gain IC= 5 mA; VCE= 5 V 100 −−
collector-emitter saturation
IC= 5 mA; IB= 0.25 mA −−100 mV
voltage
input-off voltage IC= 100 µA; VCE=5V − 0.7 0.5 V
input-on voltage IC= 1 mA; VCE= 0.3 V 1.4 0.8 − V
resistor ratio 3.7 4.7 5.7
collector capacitance IE=ie= 0; VCB=10V; f=1MHz −−2.5 pF
1999 May 18 3
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