Philips PDTC114TT Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
k, halfpage
M3D088
PDTC114TT
NPN resistor-equipped transistor
Objective specification
Supersedes data of 1998 May 19
1999 Apr 16
Philips Semiconductors Objective specification
NPN resistor-equipped transistor PDTC114TT
FEATURES
• Built-in bias resistor R1 (typ. 10 kΩ)
• Simplification of circuit design
• Reduces number of components
and board space.
APPLICATIONS
• Especially suitable for space
reduction in interface and driver
circuits
• Inverter circuit configurations
without use of an external resistor.
DESCRIPTION
handbook, 4 columns
Top view
Fig.1 Simplified outline (SOT23) and symbol.
3
3
R1
1
2
21
MAM360
NPN resistor-equipped transistor in a
SOT23 plastic package.
PNP complement: PDTA114TT.
PINNING
PIN DESCRIPTION
1 base/input
2 emitter/ground
1
2
MGA893 - 1
3
Fig.2 Equivalent inverter
symbol.
MARKING
TYPE
NUMBER
MARKING
CODE
PDTC114TT ∗12
Note
1. ∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
3 collector/output
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
O
I
CM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 50 V
collector-emitter voltage open base − 50 V
emitter-base voltage open collector − 5V
output current (DC) − 100 mA
peak collector current − 100 mA
total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
(1)
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 16 2
Philips Semiconductors Objective specification
NPN resistor-equipped transistor PDTC114TT
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
R1 input resistor 7 10 13 kΩ
C
c
thermal resistance from junction to ambient note 1 500 K/W
collector cut-off current IE= 0; VCB=50V −−100 nA
collector cut-off current IB= 0; VCE=30V −−1µA
I
= 0; VCE= 30 V; Tj= 150 °C −−50 µA
B
emitter cut-off current IC= 0; VEB=5V −−100 nA
DC current gain IC= 1 mA; VCE= 5 V 200 −−
collector-emitter saturation voltage IC= 10 mA; IB= 0.5 mA −−150 mV
collector capacitance IE=ie= 0; VCB=10V;
−−2.5 pF
f = 1 MHz
600
handbook, halfpage
h
FE
400
200
0
−1
10
VCE=5V.
(1) T
(2) T
(3) T
amb
amb
amb
= 150°C.
=25°C.
= −40 °C.
(1)
(2)
(3)
11010
MGM902
IC (mA)
Fig.3 DC current gain as a function of collector
current; typical values.
2
−1
10
handbook, halfpage
V
CEsat
(V)
−2
10
−1
10
IC/IB= 10.
(1) T
(2) T
(3) T
amb
amb
amb
= 100 °C.
=25°C.
= −40 °C.
11010
MGM901
I
(mA)
C
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
(1)
(2)
(3)
2
1999 Apr 16 3
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