Philips pdtc114t_ser Datasheet

Page 1
PDTC114T series
Rev. 08 — 9 February 2006 Product data sheet
1. Product profile

1.1 General description

NPN Resistor-Equipped Transistors (RET) family.
Table 1: Product overview
Type number Package PNP complement
PDTC114TE SOT416 SC-75 - PDTA114TE PDTC114TK SOT346 SC-59A TO-236 PDTA114TK PDTC114TM SOT883 SC-101 - PDTA114TM PDTC114TS PDTC114TT SOT23 - TO-236AB PDTA114TT PDTC114TU SOT323 SC-70 - PDTA114TU
Philips JEITA JEDEC
[1]
SOT54 SC-43A TO-92 PDTA114TS
[1] Also available in SOT54A and SOT54 variant packages (see Section 2).

1.2 Features

■ Built-in bias resistors ■ Reduces component count
■ Simplifies circuit design ■ Reduces pick and place costs
■ 100 mA output current capability

1.3 Applications

■ Digital applications ■ Cost-savingalternative forBC847 series
in digital applications
■ Controlling IC inputs ■ Switching loads

1.4 Quick reference data

Table 2: Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
CEO
I
O
R1 bias resistor 1 (input) 7 10 13 kΩ
collector-emitter voltage open base - - 50 V output current - - 100 mA
Page 2
Philips Semiconductors

2. Pinning information

Table 3: Pinning
Pin Description Simplified outline Symbol
SOT54
1 input (base) 2 output (collector) 3 GND (emitter)
SOT54A
1 input (base) 2 output (collector) 3 GND (emitter)
PDTC114T series
NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = open
2
R1
1
3
006aaa218
2
R1
1
3
006aaa218
001aab347
001aab348
1 2 3
1 2 3
SOT54 variant
1 input (base) 2 output (collector) 3 GND (emitter)
SOT23; SOT323; SOT346; SOT416
1 input (base) 2 GND (emitter) 3 output (collector)
SOT883
1 input (base) 2 GND (emitter) 3 output (collector)
1 2 3
001aab447
3
12
006aaa144
1 2
Transparent
top view
3
2
R1
1
3
006aaa218
3
R1
1
2
sym012
3
R1
1
2
sym012
PDTC114T_SER_8 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 08 — 9 February 2006 2 of 11
Page 3
Philips Semiconductors

3. Ordering information

Table 4: Ordering information
Type number Package
PDTC114TE SC-75 plastic surface mounted package; 3 leads SOT416 PDTC114TK SC-59A plastic surface mounted package; 3 leads SOT346 PDTC114TM SC-101 leadless ultra small plastic package; 3 solder lands;
PDTC114TS
PDTC114TT - plastic surface mounted package; 3 leads SOT23 PDTC114TU SC-70 plastic surface mounted package; 3 leads SOT323
[1] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9).
[1]

4. Marking

PDTC114T series
NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = open
Name Description Version
SOT883
body 1.0 × 0.6 × 0.5 mm
SC-43A plastic single-ended leaded (through hole) package;
3 leads
SOT54
Table 5: Marking codes
Type number Marking code
PDTC114TE 24 PDTC114TK 24 PDTC114TM DT PDTC114TS TC114T PDTC114TT *12 PDTC114TU *24
[1] * = -: made in Hong Kong
* = p: made in Hong Kong * = t: made in Malaysia * = W: made in China
[1]
PDTC114T_SER_8 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 08 — 9 February 2006 3 of 11
Page 4
Philips Semiconductors

5. Limiting values

Table 6: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
V
CEO
V
EBO
I
O
I
CM
P
tot
T
stg
T
j
T
amb
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint. [2] Reflow soldering is the only recommended soldering method. [3] Device mounted on an FR4 PCB with 60 µm copper strip line, standard footprint.
PDTC114T series
NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = open
collector-base voltage open emitter - 50 V collector-emitter voltage open base - 50 V emitter-base voltage open collector - 5 V output current - 100 mA peak collector current single pulse;
t
≤ 1ms
p
total power dissipation T
amb
≤ 25 °C SOT416 SOT346 SOT883 SOT54 SOT23 SOT323
storage temperature −65 +150 °C junction temperature - 150 °C ambient temperature −65 +150 °C
- 100 mA
[1]
- 150 mW
[1]
- 250 mW
[2] [3]
- 250 mW
[1]
- 500 mW
[1]
- 250 mW
[1]
- 200 mW

6. Thermal characteristics

Table 7: Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from junction to ambient
SOT416 SOT346 SOT883 SOT54 SOT23 SOT323
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. [3] Device mounted on an FR4 PCB with 60 µm copper strip line, standard footprint.
PDTC114T_SER_8 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 08 — 9 February 2006 4 of 11
in free air
[1]
- - 833 K/W
[1]
- - 500 K/W
[2] [3]
- - 500 K/W
[1]
- - 250 K/W
[1]
- - 500 K/W
[1]
- - 625 K/W
Page 5
Philips Semiconductors

7. Characteristics

Table 8: Characteristics
T
=25°C unless otherwise specified.
amb
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
R1 bias resistor 1 (input) 7 10 13 kΩ C
c
PDTC114T series
NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = open
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain VCE=5V; IC= 1 mA 200 - ­collector-emitter
saturation voltage
collector capacitance VCB=10V; IE=ie=0A;
VCB=50V; IE= 0 A - - 100 nA
VCE=30V; IB=0A - - 1 µA
=30V; IB=0A;
V
CE
T
= 150 °C
j
--50µA
VEB=5V; IC= 0 A - - 100 nA
IC= 10 mA; IB= 0.5 mA - - 150 mV
- - 2.5 pF
f=1MHz
600
(1)
h
FE
400
200
0
−1
10
(2)
(3)
006aaa552
2
(mA)
10
101
I
C
VCE=5V (1) T (2) T (3) T
amb amb amb
= 150 °C =25°C = −40 °C
Fig 1. DC current gain as a function of collector
current; typical values
006aaa553
101
IC (mA)
10
V
CEsat
(V)
10
10
1
−1
(1) (2) (3)
−2
−1
10
IC/IB=20 (1) T (2) T (3) T
amb amb amb
= 100 °C =25°C = −40 °C
Fig 2. Collector-emitter saturation voltage as a
function of collector current; typical values
2
PDTC114T_SER_8 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 08 — 9 February 2006 5 of 11
Page 6
Philips Semiconductors

8. Package outline

PDTC114T series
NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = open
1.3
1.0
0.26
0.10
1.75
1.45
1.8
1.4
3
0.9
0.7
12
0.30
1
0.15
0.45
0.15
0.95
0.60
0.25
0.10
3.1
2.7
3
3.0
1.7
2.5
1.3
12
1.9
04-11-04Dimensions in mm
0.50
0.35
0.6
0.2
Fig 3. Package outline SOT416 (SC-75) Fig 4. Package outline SOT346 (SC-59A/TO-236)
0.62
0.30
0.22
0.30
0.22
21
0.55
0.55
0.47
3
0.65
0.50
0.46
1.02
0.95
4.2
3.6
4.8
4.4
0.45
0.38
0.48
0.40
1 2
1.27
3
04-11-11Dimensions in mm
2.54
0.20
0.12
0.35 03-04-03Dimensions in mm
5.2
5.0
14.5
12.7 04-11-16Dimensions in mm
Fig 5. Package outline SOT883 (SC-101) Fig 6. Package outline SOT54 (SC-43A/TO-92)
0.45
0.38
1.27
0.48
0.40
1 2 3
1.27
2.54
05-01-10Dimensions in mm
4.2
3.6
4.8
4.4
5.2
5.0
3 max
14.5
12.7
0.45
0.38
0.48
0.40
1
2
3
5.08
2.54
04-06-28Dimensions in mm
4.2
3.6
4.8
4.4
5.2
5.0
2.5
max
14.5
12.7
Fig 7. Package outline SOT54A Fig 8. Package outline SOT54 variant
PDTC114T_SER_8 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 08 — 9 February 2006 6 of 11
Page 7
Philips Semiconductors
PDTC114T series
NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = open
2.5
2.1
3.0
2.8
3
0.45
0.15
1.4
1.2
12
0.48
1.9
0.38
1.1
0.9
0.15
0.09
2.2
1.8
3
2.2
1.35
2.0
1.15
12
0.4
1.3
04-11-04Dimensions in mm
0.3
Fig 9. Package outline SOT23 (TO-236AB) Fig 10. Package outline SOT323 (SC-70)

9. Packing information

Table 9: Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
Type number Package Description Packing quantity
PDTC114TE SOT416 4 mm pitch, 8 mm tape and reel -115 - -135 PDTC114TK SOT346 4 mm pitch, 8 mm tape and reel -115 - -135 PDTC114TM SOT883 2 mm pitch, 8 mm tape and reel - - -315 PDTC114TS SOT54 bulk, straight leads - -412 -
SOT54A tape and reel, wide pitch - - -116
tape ammopack, wide pitch - - -126
SOT54 variant bulk, delta pinning - -112 ­PDTC114TT SOT23 4 mm pitch, 8 mm tape and reel -215 - -235 PDTC114TU SOT323 4 mm pitch, 8 mm tape and reel -115 - -135
[1]
3000 5000 10000
0.45
0.15
1.1
0.8
0.25
0.10
04-11-04Dimensions in mm
[1] For further information and the availability of packing methods, seeSection 15.
PDTC114T_SER_8 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 08 — 9 February 2006 7 of 11
Page 8
Philips Semiconductors
PDTC114T series
NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = open

10. Revision history

Table 10: Revision history
Document ID Release date Data sheet status Change notice Doc. number Supersedes
PDTC114T_SER_8 20060209 Product data sheet - - PDTC114T_SER_7 Modifications:
PDTC114T_SER_7 20041011 Product
PDTC114T_SERIES_6 20040817 Product
PDTC114T_SERIES_5 20040119 Product
PDTC114T_SERIES_4 20030414 Product
PDTC114TU_3 19990416 Preliminary
PDTC114TU_2 19980519 Preliminary
PDTC114TU_1 19970716 Preliminary
PDTC114TT_3 19990416 Objective
PDTC114TT_2 19980519 Objective
PDTC114TT_1 19970714 Objective
PDTC114TS_2 19980518 Product
PDTC114TS_1 19970703 Product
PDTC114TK_2 19980519 Product
• The format of this data sheet has been redesigned to comply with the new presentation and
information standard of Philips Semiconductors.
• Type number PDTC114TEF removed
• Table 1 “Product overview”: EIAJ in table header amended to JEITA
• Section 1.2 “Features”: amended
• Section 1.3 “Applications”: amended
• Figure 1, 2, 7 and 8: added
• Figure 3, 4, 5, 6, 9 and 10: superseded by minimized package outline drawings
• Section 9 “Packing information”: added
• Section 14 “Trademarks”: added
- 9397 750 14186 PDTC114T_SERIES_6
specification
- 9397 750 13664 PDTC114T_SERIES_5
specification
- 9397 750 11731 PDTC114T_SERIES_4
specification
- 9397 750 11011 PDTC114TE_2
specification
- 9397 750 05599 PDTC114TU_2
specification
- 9397 750 03908 PDTC114TU_1
specification
- 9397 750 01149 -
specification
- 9397 750 05598 PDTC114TT_2
specification
- 9397 750 03912 PDTC114TT_1
specification
- 9397 750 01371 -
specification
- 9397 750 03891 PDTC114TS_1
specification
- 9397 750 02297 -
specification
- 9397 750 03899 PDTC114TK_1
specification
PDTC114TK_2 PDTC114TS_2 PDTC114TT_3 PDTC114TU_3
PDTC114T_SER_8 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 08 — 9 February 2006 8 of 11
Page 9
Philips Semiconductors
PDTC114T series
NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = open
Table 10: Revision history
Document ID Release date Data sheet status Change notice Doc. number Supersedes
PDTC114TK_1 19970528 Product
PDTC114TE_2 19980803 Product
PDTC114TE_1 19970711 Product
…continued
- 9397 750 01367 -
specification
- 9397 750 04123 PDTC114TE_1
specification
- 9397 750 02628 -
specification
PDTC114T_SER_8 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 08 — 9 February 2006 9 of 11
Page 10
Philips Semiconductors

11. Data sheet status

PDTC114T series
NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = open
Level Data sheet status
I Objective data Development This data sheet contains data from the objective specification for product development. Philips
II Preliminary data Qualification This data sheetcontains data from thepreliminary specification. Supplementary data willbe published
III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the
[1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
[1]
Product status
12. Definitions
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors makes norepresentation or warrantythat such applicationswill be suitablefor the specified use without further testing or modification.
[2] [3]
Definition
Semiconductors reserves the right to change the specification in any manner without notice.
at a laterdate. Philips Semiconductors reserves the righttochange the specification without notice,in order to improve the design and supply the best possible product.
right to make changesat any time in order to improvethe design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, andmakes norepresentations or warrantiesthat these productsare free frompatent, copyright, or maskwork right infringement, unlessotherwise specified.

14. Trademarks

13. Disclaimers

Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors
Notice — All referenced brands, product names, service names and trademarks are the property of their respective owners.

15. Contact information

For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: [email protected]
PDTC114T_SER_8 © Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Product data sheet Rev. 08 — 9 February 2006 10 of 11
Page 11
Philips Semiconductors
NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = open

16. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 3
4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6
9 Packing information. . . . . . . . . . . . . . . . . . . . . . 7
10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8
11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 10
12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
13 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
15 Contact information . . . . . . . . . . . . . . . . . . . . 10
PDTC114T series
© Koninklijke Philips Electronics N.V. 2006
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form partof any quotation or contract,is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Published in The Netherlands
Date of release: 9 February 2006
Document number: PDTC114T_SER_8
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