Philips pdta144t_series Datasheet

DATA SH EET

DISCRETE SEMICONDUCTORS

PDTA144T series

PNP resistor-equipped transistors;
R1 = 47 kΩ, R2 = open

Product data sheet
Supersedes data of 2004 Apr 27

2004 Aug 05

NXP Semiconductors Product data sheet

PNP resistor-equipped transistors;

PDTA144T series

R1 = 47 kΩ, R2 = open

FEATURES

• Built-in bias resistors

• Simplified circuit design

• Reduction of component count

• Reduced pick and place costs.

APPLICATIONS

• General purpose switching and amplification

• Inverter and interface circuits

• Circuit driver.

PRODUCT OVERVIEW

PACKAGE

TYPE NUMBER

PHILIPS EIAJ

PDTA144TE SOT416 SC-75 5B PDTC144TE
PDTA144TEF SOT490 SC-89 2M PDTC144TEF
PDTA144TK SOT346 SC-59 58 PDTC144TK
PDTA144TM SOT883 SC-101 F9 PDTC144TM
PDTA144TS SOT54 (TO-92) SC-43 TA144T PDTC144TS
PDTA144TT SOT23 − *AF
PDTA144TU SOT323 SC-70 *7A

QUICK REFERENCE DATA

SYMBOL PARAMETER TYP. MAX. UNIT

V

CEO

I

O

R1 bias resistor 47 − kΩ
R2 open − − −

DESCRIPTION

PNP resistor-equipped transistor (see “Simplified outline,
symbol and pinning” for package details).

collector-emitter
voltage

output current (DC) − −100 mA

MARKING CODE NPN COMPLEMENT

(1)
(1)

− −50 V

PDTC144TT
PDTC144TU

Note

1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.

2004 Aug 05 2

NXP Semiconductors Product data sheet

MAM352

PNP resistor-equipped transistors;

PDTA144T series

R1 = 47 kΩ, R2 = open

SIMPLIFIED OUTLINE, SYMBOL AND PINNING

T YPE NUMBER SIMPLIFIED OUTLINE AND SYMBOL

PDTA144TS 1 base

handbook, halfpage

1
2
3

R1

1

2

3

PDTA144TE 1 base
PDTA144TEF 2 emitter
PDTA144TK 3 collector

handbook, halfpage

PDTA144TT

3

R1

1

3

PDTA144TU

1

Top view

2

MDB272

2

PINNING

PIN DESCRIPTION

2 collector
3 emitter

PDTA144TM 1 base

2 emitter

handbook, halfpage

2

1

Bottom view

R1

3

1

MDB268

3

2

3 collector

2004 Aug 05 3

NXP Semiconductors Product data sheet

PNP resistor-equipped transistors;

PDTA144T series

R1 = 47 kΩ, R2 = open

ORDERING INFORMATION

TYPE NUMBER

NAME DESCRIPTION VERSION

PDTA144TE − plastic surface mounted package; 3 leads SOT416
PDTA144TEF − plastic surface mounted package; 3 leads SOT490
PDTA144TK − plastic surface mounted package; 3 leads SOT346
PDTA144TM − leadless ultra small plastic package; 3 solder lands;

body 1.0 × 0.6 × 0.5 mm
PDTA144TS − plastic single-ended leaded (through hole) package; 3 leads SOT54
PDTA144TT − plastic surface mounted package; 3 leads SOT23
PDTA144TU − plastic surface mounted package; 3 leads SOT323

LIMITING VALUES

In accordance with the Absolu te Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
V
I
I
P

CBO
CEO

EBO
O
CM

tot

collector-base voltage open emitter − −50 V
collector-emitter voltage open base − −50 V
emitter-base voltage open collector − −5 V
output current (DC) − −100 mA
peak collector current − −100 mA
total power dissipation T

amb

≤ 25 °C
SOT23 note 1 − 250 mW
SOT54 note 1 − 500 mW
SOT323 note 1 − 200 mW
SOT346 note 1 − 250 mW
SOT416 note 1 − 150 mW
SOT490 notes 1 and 2 − 250 mW
SOT883 notes 2 and 3 − 250 mW

T
T
T

stg
j
amb

storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C

PACKAGE

SOT883

Notes

1. Refer to standard mounting conditions.

2. Reflow soldering is the only recommended soldering method.

3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.

2004 Aug 05 4

NXP Semiconductors Product data sheet

PNP resistor-equipped transistors;

PDTA144T series

R1 = 47 kΩ, R2 = open

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th(j-a)

Notes

1. Refer to standard mounting conditions.

2. Reflow soldering is the only recommended soldering method.

3. Refer to SOT883 standard mounting conditions; FR4 with 60 μm copper strip line.

CHARACTERISTICS

T

= 25 °C unless otherwise specified.

amb

thermal resistance from junction to ambient in free air

SOT23 note 1 500 K/W
SOT54 note 1 250 K/W
SOT323 note 1 625 K/W
SOT346 note 1 500 K/W
SOT416 note 1 833 K/W
SOT490 notes 1 and 2 500 K/W
SOT883 notes 2 and 3 500 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

I

CEO

collector-base cut-off curren t VCB = −50 V; IE = 0 A − − −100 nA
collector-emitter cut-off current VCE = −30 V; IB = 0 A − − −1 μA

VCE = −30 V; IB = 0; Tj = 150 °C − − −50 μA

I

EBO

h
V

FE

CEsat

emitter-base cut-off current VEB = −5 V; IC = 0 A − − −100 nA
DC current gain VCE = −5 V; IC = −1 mA 100 − −

collector-emitter saturation voltage IC = −10 mA; IB = −0.5 mA − − −150 mV
R1 input resistor 33 47 61 kΩ
C

c

collector capacitance IE = ie = 0; VCB = −10 V;

= 1 MHz

f

− − 3 pF

2004 Aug 05 5

NXP Semiconductors Product data sheet

4

PNP resistor-equipped transistors;

PDTA144T series

R1 = 47 kΩ, R2 = open

PACKAGE OUTLINES

Plastic single-ended leaded (through hole) package; 3 leads SOT5

c

E

d

1

D

2

A L

b

e

1

e

3

b

1

0 2.5 5 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

A

5.2

mm

5.0

Note

1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.

OUTLINE
VERSION

SOT54 TO-92 SC-43A

b

0.48

0.40

b

c

D

d

1

0.66

0.45

0.38

4.8

4.4

0.55

IEC JEDEC JEITA

E

1.7

4.2

1.4

3.6

REFERENCES

2.54

e

e

1

1.27

L

14.5

12.7

L

1

(1)

L

1

max.

2.5

EUROPEAN

PROJECTION

ISSUE DATE

04-06-28
04-11-16

2004 Aug 05 6

NXP Semiconductors Product data sheet

3

PNP resistor-equipped transistors;

PDTA144T series

R1 = 47 kΩ, R2 = open

Plastic surface-mounted package; 3 leads SOT2

D

3

E

H

E

AB

X

v

M

A

12

e

1

DIMENSIONS (mm are the original dimensions)

A

1

UNIT

A

1.1

mm

0.9

OUTLINE
VERSION

SOT23 TO-236AB

max.

0.1

b

p

0.48

0.15

0.38

0.09

IEC JEDEC JEITA

b

p

e

cD

3.0

2.8

w

M

B

0 1 2 mm

scale

e

0.95

H

1

2.5

2.1

e

E

1.4

1.9

1.2

REFERENCES

Q

A

A

1

c

L

p

detail X

L

Qwv

p

E

0.55

0.45

0.15

0.45

0.2

0.1

EUROPEAN

PROJECTION

ISSUE DATE

04-11-04
06-03-16

2004 Aug 05 7

NXP Semiconductors Product data sheet

6

PNP resistor-equipped transistors;

PDTA144T series

R1 = 47 kΩ, R2 = open

Plastic surface-mounted package; 3 leads SOT34

D

B

E

H

E

3

A

X

v

M

A

12

e

1

DIMENSIONS (mm are the original dimensions)

UNIT

mm

OUTLINE
VERSION

SOT346 TO-236 SC-59A

A

1.3

1.0

A

1

0.1

0.013

b

cD

p

0.50

0.26

0.35

0.10

IEC JEDEC JEITA

b

p

e

0 1 2 mm

e

E

3.1

1.7

2.7

1.9

1.3

REFERENCES

Q

A

A

1

c

L

w

M

B

detail X

scale

e

H

L

Qwv

p

E

0.33

0.6

0.2

0.23

0.2

0.95

1

3.0

2.5

p

0.2

EUROPEAN

PROJECTION

ISSUE DATE

04-11-11
06-03-16

2004 Aug 05 8

NXP Semiconductors Product data sheet

3

PNP resistor-equipped transistors;

PDTA144T series

R1 = 47 kΩ, R2 = open

Plastic surface-mounted package; 3 leads SOT32

D

y

3

E

AB

X

H

E

v

M

A

12

e

DIMENSIONS (mm are the original dimensions)

A

1

mm

1.1

0.8

A

max

0.1

b

0.4

0.3

p

UNIT

b

1

p

e

cD

0.25

2.2

0.10

1.8

A

A

1

B

w

M

0 1 2 mm

scale

e

1.3

e1HEL

2.2

0.65

2.0

p

0.45

0.15

E

1.35

1.15

Qwv

0.23

0.13

detail X

Q

c

L

p

0.20.2

OUTLINE
VERSION

SOT323 SC-70

IEC JEDEC JEITA

REFERENCES

EUROPEAN

PROJECTION

ISSUE DATE

04-11-04
06-03-16

2004 Aug 05 9

NXP Semiconductors Product data sheet

6

PNP resistor-equipped transistors;

PDTA144T series

R1 = 47 kΩ, R2 = open

Plastic surface-mounted package; 3 leads SOT41

D

v

M

A

3

E

AB

X

H

E

12

e

DIMENSIONS (mm are the original dimensions)

A

1

UNIT

A

0.95

mm

0.60

OUTLINE
VERSION

SOT416 SC-75

max

0.1

b

p

0.30

0.15

IEC JEDEC JEITA

b

1

p

e

cD

0.25

1.8

0.10

1.4

E

0.9

0.7

REFERENCES

w

e

1

A

M

B

0 0.5 1 mm

scale

e

H

L

p

E

0.45

0.15

0.5

1

1.75

1.45

A

1

L

p

detail X

v

Qw

0.23

0.13

0.2

0.2

EUROPEAN

PROJECTION

Q

c

ISSUE DATE

04-11-04
06-03-16

2004 Aug 05 10

NXP Semiconductors Product data sheet

0

PNP resistor-equipped transistors;

PDTA144T series

R1 = 47 kΩ, R2 = open

Plastic surface-mounted package; 3 leads SOT49

D

3

E

H

E

AB

X

v M

A

12

e

b

1

p

e

0 1 2 mm

DIMENSIONS (mm are the original dimensions)

UNIT b

A

0.8

0.6

0.33

0.23

mm

OUTLINE
VERSION

SOT490 SC-89

cD

p

0.2

1.7

1.5

0.95

0.75

0.1

IEC JEDEC JEITA

e

E

e

0.5

1.0

REFERENCES

1

w M

B

H

1.7

1.5

scale

E

L

0.5

0.3

A

c

L

p

detail X

0.1

wv

0.1

EUROPEAN

PROJECTION

ISSUE DATE

05-07-28
06-03-16

p

2004 Aug 05 11

NXP Semiconductors Product data sheet

L

3

PNP resistor-equipped transistors;

PDTA144T series

R1 = 47 kΩ, R2 = open

eadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm SOT88

L

2

b

e

1

e

1

L

1

3

b

1

E

DIMENSIONS (mm are the original dimensions)

A

(1)

UNIT

A

0.50

mm

0.46

Note

1. Including plating thickness

OUTLINE
VERSION

SOT883 SC-101

max.

0.03

1

bb

0.20

0.12

IEC JEDEC JEITA

1

0.55

0.47

DE

0.62

0.55

eLL

1.02

0.35 0.65

0.95

REFERENCES

A

A

1

D

0 0.5 1 mm

scale

e

1

0.30

0.22

0.30

0.22

1

EUROPEAN

PROJECTION

ISSUE DATE

03-02-05
03-04-03

2004 Aug 05 12

NXP Semiconductors Product data sheet

PNP resistor-equipped transistors;

PDTA144T series

R1 = 47 kΩ, R2 = open

DATA SHEET STATUS

DOCUMENT

STATUS

Objective data sheet Development This document contains data from the objective specification for product

Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the pr oduct specification.

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at

http://www.nxp.com.

URL

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does not give any representations or warranties,
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reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
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NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
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(1)

PRODUCT

STATUS

(2)

DEFINITION

development.

above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.

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products are sold subject to the general terms and
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Export control ⎯ This document as well as the item(s)
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regulations. Export might require a prior authorization from
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Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.

Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC
the device. Limiting values are stress ratings only an d
operation of the device at these or any other conditions

2004 Aug 05 13

60134) may cause permanent damage to

NXP Semiconductors

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This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.

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Printed in The Netherlands R75/03/pp14 Date of release: 2004 Aug 05 Document order number: 9397 750 13661