Philips pdta124x_ser Datasheet

PDTA124X series

PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ

Rev. 08 — 3 September 2009 Product data sheet

1. Product profile

1.1 General description

PNP Resistor-Equipped Transistors (RET) family.

Table 1. Product overview

Type number Package NPN complement

PDTA124XE SOT416 SC-75 - PDTC124XE
PDTA124XEF SOT490 SC-89 - PDTC124XEF
PDTA124XK SOT346 SC-59A TO-236 PDTC124XK
PDTA124XM SOT883 SC-101 - PDTC124XM
PDTA124XS
PDTA124XT SOT23 - TO-236AB PDTC124XT
PDTA124XU SOT323 SC-70 - PDTC124XU

NXP JEITA JEDEC

[1]

SOT54 SC-43A TO-92 PDTC124XS

[1] Also available in SOT54A and SOT54 variant packages (see Section 2)

1.2 Features

n Built-in bias resistors n Reduces component count
n Simplifies circuit design n Reduces pick and place costs
n 100 mA output current capability

1.3 Applications

n Digital applications n Cost-savingalternative forBC857 series

in digital applications

n Controlling IC inputs n Switching loads

1.4 Quick reference data

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

V

CEO

I

O

R1 bias resistor 1 (input) 15.4 22 28.6 kΩ
R2/R1 bias resistor ratio 1.7 2.1 2.6

collector-emitter voltage open base - - −50 V
output current (DC) - - −100 mA

NXP Semiconductors

2. Pinning information

Table 3. Pinning

Pin Description Simplified outline Symbol

SOT54

1 input (base)
2 output (collector)
3 GND (emitter)

SOT54A

1 input (base)
2 output (collector)
3 GND (emitter)

PDTA124X series

PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ

2

3

2

3

001aab347

001aab348

R1

1

1
2
3

1
2
3

R2

006aaa148

R1

1

R2

006aaa148

SOT54 variant

1 input (base)
2 output (collector)
3 GND (emitter)

SOT23; SOT323; SOT346; SOT416; SOT490

1 input (base)
2 GND (emitter)
3 output (collector)

SOT883

1 input (base)
2 GND (emitter)
3 output (collector)

1
2
3

001aab447

3

12

006aaa144

1
2

Transparent

top view

3

R1

1

R2

006aaa148

R1

1

R1

1

2

3

3

R2

2

sym003

3

R2

2

sym003

PDTA124X_SER_8 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 08 — 3 September 2009 2 of 12

NXP Semiconductors

3. Ordering information

Table 4. Ordering information

Type number Package

PDTA124XE SC-75 plastic surface mounted package; 3 leads SOT416
PDTA124XEF SC-89 plastic surface mounted package; 3 leads SOT490
PDTA124XK SC-59A plastic surface mounted package; 3 leads SOT346
PDTA124XM SC-101 leadless ultra small plastic package; 3 solder lands;

PDTA124XS

PDTA124XT - plastic surface mounted package; 3 leads SOT23
PDTA124XU SC-70 plastic surface mounted package; 3 leads SOT323

[1] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9)

[1]

PDTA124X series

PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ

Name Description Version

SOT883

body 1.0 × 0.6 × 0.5 mm

SC-43A plastic single-ended leaded (through hole) package;

3 leads

SOT54

4. Marking

Table 5. Marking codes

Type number Marking code

PDTA124XE 31
PDTA124XEF 31
PDTA124XK 44
PDTA124XM DK
PDTA124XS TA124X
PDTA124XT *47
PDTA124XU *44

[1] * = -: made in Hong Kong

* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China

[1]

PDTA124X_SER_8 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 08 — 3 September 2009 3 of 12

NXP Semiconductors

5. Limiting values

Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

CBO

V

CEO

V

EBO

V

I

I

O

I

CM

P

tot

T

stg

T

j

T

amb

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 60 µm copper strip line, standard footprint.

PDTA124X series

PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ

collector-base voltage open emitter - −50 V
collector-emitter voltage open base - −50 V
emitter-base voltage open collector - −7V
input voltage

positive - +7 V

negative - −40 V
output current (DC) - −100 mA
peak collector current - −100 mA
total power dissipation T

SOT416

SOT490

SOT346

SOT883

SOT54

SOT23

SOT323
storage temperature −65 +150 °C
junction temperature - 150 °C
ambient temperature −65 +150 °C

amb

≤ 25 °C

[1]

- 150 mW

[1][2]

- 250 mW

[1]

- 250 mW

[2][3]

- 250 mW

[1]

- 500 mW

[1]

- 250 mW

[1]

- 200 mW

PDTA124X_SER_8 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 08 — 3 September 2009 4 of 12

NXP Semiconductors

6. Thermal characteristics

Table 7. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

R

th(j-a)

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 60 µm copper strip line, standard footprint.

thermal resistance from
junction to ambient

SOT416
SOT490
SOT346
SOT883
SOT54
SOT23
SOT323

PDTA124X series

PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ

in free air

[1]

- - 833 K/W

[1][2]

- - 500 K/W

[1]

- - 500 K/W

[2][3]

- - 500 K/W

[1]

- - 250 K/W

[1]

- - 500 K/W

[1]

- - 625 K/W

7. Characteristics

Table 8. Characteristics

T

amb

Symbol Parameter Conditions Min Typ Max Unit

I

CBO

I

CEO

I

EBO

h

FE

V

CEsat

V

I(off)

V

I(on)

R1 bias resistor 1 (input) 15.4 22 28.6 kΩ
R2/R1 bias resistor ratio 1.7 2.1 2.6
C

c

=25°C unless otherwise specified

collector-base cut-off

VCB= −50 V; IE=0A - - −100 nA

current
collector-emitter cut-off

current

emitter-base cut-off

VCE= −30 V; IB=0A - - −1 µA

= −30 V; IB=0A;

V

CE

T

= 150 °C

j

--−50 µA

VEB= −5 V; IC=0A - - −120 µA

current
DC current gain VCE= −5 V; IC= −5mA 80 - ­collector-emitter

saturation voltage

IC= −10 mA;
I

= −0.5 mA

B

--−150 mV

off-state input voltage VCE= −5 V; IC= −100 µA- −0.8 −0.5 V
on-state input voltage VCE= −0.3 V; IC= −2mA −2 −1.1 - V

collector capacitance VCB= −10 V;IE=ie=0A;

--3pF

f=1MHz

PDTA124X_SER_8 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 08 — 3 September 2009 5 of 12

NXP Semiconductors

PDTA124X series

PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ

3

10

h

FE

2

10

10

1

−1

−10

006aaa198

(1)

(2)
(3)

2

−10−1
IC (mA)

−10

VCE = −5 V
(1) T
(2) T
(3) T

= 100 °C

amb

= 25 °C

amb

= −40 °C

amb

Fig 1. DC current gain as a function of collector

current; typical values

006aaa199

−10−1
IC (mA)

−10

V

(mV)

−10

CEsat

−10

−10

3

2

−10

(1)
(2)
(3)

−1

IC/IB = 20
(1) T
(2) T
(3) T

= 100 °C

amb

= 25 °C

amb

= −40 °C

amb

Fig 2. Collector-emitter saturation voltage as a

function of collector current; typical values

2

−10

V

I(on)

(mV)

−10

−10

4

3

2

−10

(1)
(2)

(3)

−1

006aaa200

−10−1
IC (mA)

−10

VCE = −0.3 V
(1) T
(2) T
(3) T

= −40 °C

amb

= 25 °C

amb

= 100 °C

amb

Fig 3. On-state input voltage as a function of

collector current; typical values

4

−10

V

I(off)

(mV)

3

−10

2

−10

−10

(1)
(2)

(3)

2

−2

−1

006aaa201

IC (mA)

−10−1−10

VCE = −5 V
(1) T
(2) T
(3) T

= −40 °C

amb

= 25 °C

amb

= 100 °C

amb

Fig 4. Off-state input voltage as a function of

collector current; typical values

PDTA124X_SER_8 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 08 — 3 September 2009 6 of 12

NXP Semiconductors

8. Package outline

PDTA124X series

PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ

1.7

1.5

3

1

0.33

0.23

0.5

0.3

1.75

1.45

1.8

1.4

3

0.9

0.7

12

0.30

1

0.15

0.45

0.15

0.95

0.60

0.25

0.10

1.7

0.95

1.5

0.75

12

04-11-04Dimensions in mm

Fig 5. Package outline SOT416 (SC-75) Fig 6. Package outline SOT490 (SC-89)

0.62

0.55

0.55

0.47

0.50

0.46

3

0.65

3.0

2.5

1.7

1.3

3.1

2.7

1.3

1.0

3

0.6

0.2

0.30

0.22

0.8

0.6

0.2

0.1

1.02

0.95

98-10-23Dimensions in mm

0.30

0.22

12

1.9

0.50

0.35

0.26

0.10

04-11-11Dimensions in mm

21

0.20

0.12

0.35

Fig 7. Package outline SOT346 (SC-59A/TO-236) Fig 8. Package outline SOT883 (SC-101)

4.2

3.6

4.8

4.4

5.2

5.0

14.5

12.7

0.45

0.38

0.48

0.40

1
2
3

1.27

2.54

04-11-16Dimensions in mm

4.2

3.6

4.8

4.4

5.2

5.0

3 max

14.5

12.7

Fig 9. Package outline SOT54 (SC-43A/TO-92) Fig 10. Package outline SOT54A

03-04-03Dimensions in mm

0.45

0.38

0.48

0.40

1

2

3

5.08

2.54

04-06-28Dimensions in mm

PDTA124X_SER_8 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 08 — 3 September 2009 7 of 12

NXP Semiconductors

PDTA124X series

PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ

4.2

3.6

4.8

4.4

5.2

5.0

2.5

max

14.5

12.7

0.45

0.38

1.27

0.48

0.40

1
2
3

1.27

2.54

05-01-10Dimensions in mm

2.5

2.1

1.4

1.2

12

3.0

2.8

1.9

3

0.45

0.15

0.48

0.38

Fig 11. Package outline SOT54 variant Fig 12. Package outline SOT23 (TO-236AB)

2.2

2.0

1.35

1.15

2.2

1.8

3

0.45

0.15

1.1

0.8

1.1

0.9

0.15

0.09

04-11-04Dimensions in mm

Fig 13. Package outline SOT323 (SC-70)

12

1.3

0.4

0.3

0.25

0.10

04-11-04Dimensions in mm

PDTA124X_SER_8 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 08 — 3 September 2009 8 of 12

NXP Semiconductors

9. Packing information

PDTA124X series

PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ

Table 9. Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

Type number Package Description Packing quantity

PDTA124XE SOT416 4 mm pitch, 8 mm tape and reel -115 - - -135
PDTA124XEF SOT490 4 mm pitch, 8 mm tape and reel - -115 - ­PDTA124XK SOT346 4 mm pitch, 8 mm tape and reel -115 - - -135
PDTA124XM SOT883 2 mm pitch, 8 mm tape and reel - - - -315
PDTA124XS SOT54 bulk, straight leads - - -412 -

SOT54A tape and reel, wide pitch - - - -116

tape ammopack, wide pitch - - - -126

SOT54 variant bulk, delta pinning - - -112 ­PDTA124XT SOT23 4 mm pitch, 8 mm tape and reel -215 - - -235
PDTA124XU SOT323 4 mm pitch, 8 mm tape and reel -115 - - -135

[1] For further information and the availability of packing methods, seeSection 12.

[1]

3000 4000 5000 10000

PDTA124X_SER_8 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 08 — 3 September 2009 9 of 12

NXP Semiconductors

PDTA124X series

PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ

10. Revision history

Table 10. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PDTA124X_SER_8 20090903 Product data sheet - PDTA124X_SER_7
Modifications:

PDTA124X_SER_7 20050811 Product data sheet - PDTA124X_SERIES_6
PDTA124X_SERIES_6 20040804 Product specification - PDTA124X_SERIES_5
PDTA124X_SERIES_5 20040407 Product specification - PDTA124X_SERIES_4
PDTA124X_SERIES_4 20030414 Product specification - PDTA124XE_3

PDTA124XE_3 19990521 Product specification - PDTA124XE_2
PDTA124XE_2 19981125 Product specification - PDTA124XE_1
PDTA124XE_1 19971215 Product specification - ­PDTA124XEF_2 19990525 Preliminary specification - PDTA124XEF_1
PDTA124XEF_1 19981116 Preliminary specification - -

• This data sheet was changed to reflect the new company name NXP Semiconductors,

including new legal definitions and disclaimers. No changes were made to the technical
content

PDTA124XEF_2

PDTA124X_SER_8 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 08 — 3 September 2009 10 of 12

NXP Semiconductors

11. Legal information

11.1 Data sheet status

PDTA124X series

PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s)described inthis document may have changed since thisdocument waspublished and may differin case ofmultiple devices.The latestproduct status

information is available on the Internet at URL

[1][2]

Product status

11.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information includedherein and shallhave no liabilityfor the consequencesof
use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet
with thesame product typenumber(s) and title.A short data sheet isintended
for quickreference only and shouldnot be relied upon tocontain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.

11.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXPSemiconductors does not giveany representations or
warranties, expressed or implied, as tothe accuracy or completenessof such
information and shall have no liability for the consequences of use of such
information.

Right to make changes — NXP Semiconductors reserves the right tomake
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. Thisdocument supersedes and replaces all informationsupplied prior
to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental

[3]

http://www.nxp.com.

Definition

damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in
the Absolute MaximumRatings System of IEC 60134)may cause permanent
damage tothe device. Limitingvalues are stress ratingsonly and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions ofcommercial sale, as published
at

http://www.nxp.com/profile/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of anylicense under any copyrights, patents
or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.

Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.

11.4 Trademarks

Notice: Allreferenced brands,product names, servicenames and trademarks
are the property of their respective owners.

12. Contact information

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]

PDTA124X_SER_8 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 08 — 3 September 2009 11 of 12

NXP Semiconductors

PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ

13. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 3

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4

6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7

9 Packing information. . . . . . . . . . . . . . . . . . . . . . 9

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10

11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11

11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11

11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

11.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

12 Contact information. . . . . . . . . . . . . . . . . . . . . 11

13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

PDTA124X series

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2009. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]

Date of release: 3 September 2009

Document identifier: PDTA124X_SER_8