Philips pdta123t_ser Datasheet

Page 1
PDTA123T series
Rev. 02 — 3 September 2009 Product data sheet
1. Product profile

1.1 General description

PNP Resistor-Equipped Transistors (RET) family.
Table 1. Product overview
Type number Package NPN complement
PDTA123TE SOT416 SC-75 - PDTC123TE PDTA123TK SOT346 SC-59A TO-236 PDTC123TK PDTA123TM SOT883 SC-101 - PDTC123TM PDTA123TS PDTA123TT SOT23 - TO-236AB PDTC123TT PDTA123TU SOT323 SC-70 - PDTC123TU
NXP JEITA JEDEC
[1]
SOT54 SC-43A TO-92 PDTC123TS
[1] Also available in SOT54A and SOT54 variant packages (see Section 2)

1.2 Features

n Built-in bias resistors n Reduces component count n Simplifies circuit design n Reduces pick and place costs n 100 mA output current capability

1.3 Applications

n Digital applications n Cost-savingalternative forBC857 series
in digital applications
n Controlling IC inputs n Switching loads

1.4 Quick reference data

Table 2. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
CEO
I
O
R1 bias resistor 1 (input) 1.54 2.2 2.86 kΩ
collector-emitter voltage open base - - −50 V output current - - −100 mA
Page 2
NXP Semiconductors

2. Pinning information

Table 3. Pinning
Pin Description Simplified outline Symbol
SOT54
1 input (base) 2 output (collector) 3 GND (emitter)
SOT54A
1 input (base) 2 output (collector) 3 GND (emitter)
PDTA123T series
PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
2
R1
1
3
006aaa217
2
R1
1
3
006aaa217
001aab347
001aab348
1 2 3
1 2 3
SOT54 variant
1 input (base) 2 output (collector) 3 GND (emitter)
SOT23; SOT323; SOT346; SOT416
1 input (base) 2 GND (emitter) 3 output (collector)
SOT883
1 input (base) 2 GND (emitter) 3 output (collector)
1 2 3
001aab447
3
12
006aaa144
1 2
Transparent
top view
3
2
R1
1
3
006aaa217
3
R1
1
2
sym009
3
R1
1
2
sym009
PDTA123T_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 3 September 2009 2 of 10
Page 3
NXP Semiconductors

3. Ordering information

Table 4. Ordering information
Type number Package
PDTA123TE SC-75 plastic surface mounted package; 3 leads SOT416 PDTA123TK SC-59A plastic surface mounted package; 3 leads SOT346 PDTA123TM SC-101 leadless ultra small plastic package; 3 solder lands;
PDTA123TS
PDTA123TT - plastic surface mounted package; 3 leads SOT23 PDTA123TU SC-70 plastic surface mounted package; 3 leads SOT323
[1] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9)
[1]

4. Marking

PDTA123T series
PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
Name Description Version
SOT883
body 1.0 × 0.6 × 0.5 mm
SC-43A plastic single-ended leaded (through hole) package;
3 leads
SOT54
Table 5. Marking codes
Type number Marking code
PDTA123TE 2A PDTA123TK GA PDTA123TM FA PDTA123TS TA123T PDTA123TT ZL* PDTA123TU *1S
[1] * = -: made in Hong Kong
* = p: made in Hong Kong * = t: made in Malaysia * = W: made in China
[1]
PDTA123T_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 3 September 2009 3 of 10
Page 4
NXP Semiconductors

5. Limiting values

Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
V
CEO
V
EBO
I
O
I
CM
P
tot
T
stg
T
j
T
amb
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint. [2] Reflow soldering is the only recommended soldering method. [3] Device mounted on an FR4 PCB with 60 µm copper strip line, standard footprint.
PDTA123T series
PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
collector-base voltage open emitter - −50 V collector-emitter voltage open base - −50 V emitter-base voltage open collector - −5V output current - −100 mA peak collector current single pulse;
t
≤ 1ms
p
total power dissipation T
amb
≤ 25 °C SOT416 SOT346 SOT883 SOT54 SOT23 SOT323
storage temperature −65 +150 °C junction temperature - 150 °C ambient temperature −65 +150 °C
- −100 mA
[1]
- 150 mW
[1]
- 250 mW
[2][3]
- 250 mW
[1]
- 500 mW
[1]
- 250 mW
[1]
- 200 mW

6. Thermal characteristics

Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from junction to ambient
SOT416 SOT346 SOT883 SOT54 SOT23 SOT323
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommended soldering method. [3] Device mounted on an FR4 PCB with 60 µm copper strip line, standard footprint.
PDTA123T_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 3 September 2009 4 of 10
in free air
[1]
- - 833 K/W
[1]
- - 500 K/W
[2][3]
- - 500 K/W
[1]
- - 250 K/W
[1]
- - 500 K/W
[1]
- - 625 K/W
Page 5
NXP Semiconductors

7. Characteristics

Table 8. Characteristics
T
amb
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
R1 bias resistor 1 (input) 1.54 2.2 2.86 kΩ C
c
PDTA123T series
PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
=25°C unless otherwise specified
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain VCE= −5 V; IC= −20 mA 30 - ­collector-emitter
saturation voltage
collector capacitance VCB= −10 V; IE=ie=0A;
VCB= −50 V; IE=0A - - −100 nA
VCE= −30 V; IB=0A - - −1 µA
= −30 V; IB=0A;
V
CE
T
= 150 °C
j
--−50 µA
VEB= −5 V; IC=0A - - −100 nA
IC= −10 mA; IB= −0.5 mA - - −150 mV
--3pF
f=1MHz
500
h
FE
400
300
200
100
0
−10
−1
(1)
(2)
(3)
006aaa691
2
−10−1 IC (mA)
−10
VCE= −5V (1) T (2) T (3) T
amb amb amb
= 100 °C =25°C = −40 °C
Fig 1. DC current gain as a function of collector
current; typical values
006aaa692
−10−1 IC (mA)
−10
V
−10
−10
CEsat
(V)
−1
−1
−2
−10
(1) (2) (3)
−1
IC/IB=20 (1) T (2) T (3) T
amb amb amb
= 100 °C =25°C = −40 °C
Fig 2. Collector-emitter saturation voltage as a
function of collector current; typical values
2
PDTA123T_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 3 September 2009 5 of 10
Page 6
NXP Semiconductors

8. Package outline

PDTA123T series
PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
1.3
1.0
0.26
0.10
04-11-11Dimensions in mm
1.75
1.45
1.8
1.4
3
0.9
0.7
12
0.30
1
0.15
0.45
0.15
0.95
0.60
0.25
0.10
3.1
2.7
3
3.0
1.7
2.5
1.3
12
1.9
04-11-04Dimensions in mm
0.50
0.35
0.6
0.2
Fig 3. Package outline SOT416 (SC-75) Fig 4. Package outline SOT346 (SC-59A/TO-236)
0.62
0.30
0.22
0.30
0.22
21
0.55
0.55
0.47
3
0.65
0.50
0.46
1.02
0.95
4.2
3.6
4.8
4.4
0.45
0.38
0.48
0.40
1 2
1.27
3
2.54
0.20
0.12
0.35 03-04-03Dimensions in mm
5.2
5.0
14.5
12.7 04-11-16Dimensions in mm
Fig 5. Package outline SOT883 (SC-101) Fig 6. Package outline SOT54 (SC-43A/TO-92)
0.45
0.38
1.27
0.48
0.40
1 2 3
1.27
2.54
05-01-10Dimensions in mm
4.2
3.6
4.8
4.4
5.2
5.0
3 max
14.5
12.7
0.45
0.38
0.48
0.40
1
2
3
5.08
2.54
04-06-28Dimensions in mm
4.2
3.6
4.8
4.4
5.2
5.0
2.5
max
14.5
12.7
Fig 7. Package outline SOT54A Fig 8. Package outline SOT54 variant
PDTA123T_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 3 September 2009 6 of 10
Page 7
NXP Semiconductors
PDTA123T series
PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
2.5
2.1
3.0
2.8
3
0.45
0.15
1.4
1.2
12
0.48
1.9
0.38
1.1
0.9
0.15
0.09
2.2
1.8
0.4
0.3
0.45
0.15
3
2.2
1.35
2.0
1.15
12
1.3
04-11-04Dimensions in mm
Fig 9. Package outline SOT23 (TO-236AB) Fig 10. Package outline SOT323 (SC-70)

9. Packing information

Table 9. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
Type number Package Description Packing quantity
PDTA123TE SOT416 4 mm pitch, 8 mm tape and reel -115 - -135 PDTA123TK SOT346 4 mm pitch, 8 mm tape and reel -115 - -135 PDTA123TM SOT883 2 mm pitch, 8 mm tape and reel - - -315 PDTA123TS SOT54 bulk, straight leads - -412 -
SOT54A tape and reel, wide pitch - - -116
tape ammopack, wide pitch - - -126
SOT54 variant bulk, delta pinning - -112 ­PDTA123TT SOT23 4 mm pitch, 8 mm tape and reel -215 -235 PDTA123TU SOT323 4 mm pitch, 8 mm tape and reel -115 -135
[1]
3000 5000 10000
1.1
0.8
0.25
0.10
04-11-04Dimensions in mm
[1] For further information and the availability of packing methods, seeSection 12.
PDTA123T_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 3 September 2009 7 of 10
Page 8
NXP Semiconductors
PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
PDTA123T series

10. Revision history

Table 10. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PDTA123T_SER_2 20090903 Product data sheet - PDTA123T_SER_1 Modifications:
PDTA123T_SER_1 20060307 Product data sheet - -
• This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical content.
PDTA123T_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 3 September 2009 8 of 10
Page 9
NXP Semiconductors

11. Legal information

11.1 Data sheet status

PDTA123T series
PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open
Document status
Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s)described inthis document may have changed since thisdocument waspublished and may differin case ofmultiple devices.The latestproduct status
information is available on the Internet at URL
[1][2]
Product status
11.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information includedherein and shallhave no liabilityfor the consequencesof use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet with thesame product typenumber(s) and title.A short data sheet isintended for quickreference only and shouldnot be relied upon tocontain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.

11.3 Disclaimers

General — Information in this document is believed to be accurate and
reliable. However, NXPSemiconductors does not giveany representations or warranties, expressed or implied, as tothe accuracy or completenessof such information and shall have no liability for the consequences of use of such information.
Right to make changes — NXP Semiconductors reserves the right tomake changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. Thisdocument supersedes and replaces all informationsupplied prior to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental
[3]
http://www.nxp.com.
Definition
damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in the Absolute MaximumRatings System of IEC 60134)may cause permanent damage tothe device. Limitingvalues are stress ratingsonly and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold subject to the general terms and conditions ofcommercial sale, as published at
http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of anylicense under any copyrights, patents or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.

11.4 Trademarks

Notice: Allreferenced brands,product names, servicenames and trademarks are the property of their respective owners.

12. Contact information

For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected]
PDTA123T_SER_2 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 02 — 3 September 2009 9 of 10
Page 10
NXP Semiconductors
PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open

13. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 3
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6
9 Packing information. . . . . . . . . . . . . . . . . . . . . . 7
10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8
11 Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9
11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9
11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
11.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
12 Contact information. . . . . . . . . . . . . . . . . . . . . . 9
13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
PDTA123T series
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009. All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected]
Date of release: 3 September 2009
Document identifier: PDTA123T_SER_2
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