Philips pdta114t_ser Datasheet

PDTA114T series

PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open

Rev. 07 — 20 April 2007 Product data sheet

1. Product profile

1.1 General description

PNP Resistor-Equipped Transistors (RET) family in small plastic packages.

Table 1. Product overview

Type number Package NPN complement

PDTA114TE SOT416 SC-75 - PDTC114TE
PDTA114TK SOT346 SC-59A TO-236 PDTC114TK
PDTA114TM SOT883 SC-101 - PDTC114TM
PDTA114TS
PDTA114TT SOT23 - TO-236AB PDTC114TT
PDTA114TU SOT323 SC-70 - PDTC114TU

NXP JEITA JEDEC

[1]

SOT54 SC-43A TO-92 PDTC114TS

[1] Also available in SOT54A and SOT54 variant packages (see Section 2).

1.2 Features

n 100 mA output current capability n Reduces component count
n Built-in bias resistors n Reduces pick and place costs
n Simplifies circuit design

1.3 Applications

n Digital applications n Cost-saving alternative to BC857 series

in digital applications

n Control of IC inputs n Low current peripheral driver

1.4 Quick reference data

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

V

CEO

I

O

R1 bias resistor 1 (input) 7 10 13 kΩ

collector-emitter voltage open base - - −50 V
output current - - −100 mA

NXP Semiconductors

2. Pinning information

Table 3. Pinning

Pin Description Simplified outline Symbol

SOT54

1 input (base)
2 output (collector)
3 GND (emitter)

SOT54A

1 input (base)
2 output (collector)
3 GND (emitter)

PDTA114T series

PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open

2

R1

1

3

006aaa217

2

R1

1

3

006aaa217

001aab347

001aab348

1
2
3

1
2
3

SOT54 variant

1 input (base)
2 output (collector)
3 GND (emitter)

SOT23; SOT323; SOT346; SOT416

1 input (base)
2 GND (emitter)
3 output (collector)

SOT883

1 input (base)
2 GND (emitter)
3 output (collector)

1
2
3

001aab447

3

12

006aaa144

1
2

Transparent

top view

3

2

R1

1

3

006aaa217

3

R1

1

2

sym009

3

R1

1

2

sym009

PDTA114T_SER_7 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 07 — 20 April 2007 2 of 11

NXP Semiconductors

3. Ordering information

Table 4. Ordering information

Type number Package

PDTA114TE SC-75 plastic surface-mounted package; 3leads SOT416
PDTA114TK SC-59A plastic surface-mounted package; 3 leads SOT346
PDTA114TM SC-101 leadless ultra small plastic package; 3 solder lands;

PDTA114TS

PDTA114TT - plastic surface-mounted package; 3 leads SOT23
PDTA114TU SC-70 plastic surface-mounted package; 3 leads SOT323

[1] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9).

[1]

4. Marking

PDTA114T series

PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open

Name Description Version

SOT883

body 1.0 × 0.6 × 0.5 mm

SC-43A plasticsingle-endedleaded(throughhole)package;

3 leads

SOT54

Table 5. Marking codes

Type number Marking code

PDTA114TE 11
PDTA114TK 23
PDTA114TM DE
PDTA114TS TA114T
PDTA114TT *11
PDTA114TU *23

[1] * = -: made in Hong Kong

* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China

[1]

PDTA114T_SER_7 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 07 — 20 April 2007 3 of 11

NXP Semiconductors

5. Limiting values

Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

CBO

V

CEO

V

EBO

I

O

I

CM

P

tot

T

j

T

amb

T

stg

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 60 µm copper strip line, standard footprint.

PDTA114T series

PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open

collector-base voltage open emitter - −50 V
collector-emitter voltage open base - −50 V
emitter-base voltage open collector - −5V
output current - −100 mA
peak collector current single pulse;

t

≤ 1ms

p

total power dissipation T

amb

≤ 25 °C
PDTA114TE
PDTA114TK
PDTA114TM
PDTA114TS
PDTA114TT
PDTA114TU

junction temperature - 150 °C
ambient temperature −65 +150 °C
storage temperature −65 +150 °C

- −100 mA

[1]

- 150 mW

[1]

- 250 mW

[2][3]

- 250 mW

[1]

- 500 mW

[1]

- 250 mW

[1]

- 200 mW

6. Thermal characteristics

Table 7. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

R

th(j-a)

thermal resistance from
junction to ambient

PDTA114TE
PDTA114TK
PDTA114TM
PDTA114TS
PDTA114TT
PDTA114TU

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 60 µm copper strip line, standard footprint.

PDTA114T_SER_7 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 07 — 20 April 2007 4 of 11

in free air

[1]

- - 833 K/W

[1]

- - 500 K/W

[2][3]

- - 500 K/W

[1]

- - 250 K/W

[1]

- - 500 K/W

[1]

- - 625 K/W

NXP Semiconductors

7. Characteristics

Table 8. Characteristics

T

amb

Symbol Parameter Conditions Min Typ Max Unit

I

CBO

I

CEO

I

EBO

h

FE

V

CEsat

R1 bias resistor 1 (input) 7 10 13 kΩ
C

c

PDTA114T series

PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open

=25°C unless otherwise specified.

collector-base cut-off
current

collector-emitter
cut-off current

emitter-base cut-off
current

DC current gain VCE= −5 V; IC= −1 mA 200 - ­collector-emitter

saturation voltage

collector capacitance VCB= −10 V;IE=ie=0A;

VCB= −50 V; IE=0A - - −100 nA

VCE= −30 V; IB=0A - - −1 µA

= −30 V; IB=0A;

V

CE

T

= 150 °C

j

--−50 µA

VEB= −5 V; IC=0A - - −100 nA

IC= −10 mA;
I

= −0.5 mA

B

--−150 mV

--3pF

f = 1 MHz

600

h

FE

400

200

0

−1

−10

006aaa554

(1)

(2)

(3)

(mA)

C

−10

−10−1

I

VCE= −5V
(1) T
(2) T
(3) T

amb
amb
amb

= 150 °C
=25°C
= −40 °C

Fig 1. DC current gain as a function of collector

current; typical values

−1

V

CEsat

(V)

−1

−10

−2

2

−10

−10

−1

(1)
(2)
(3)

006aaa555

2

−10−1
IC (mA)

−10

IC/IB=20
(1) T
(2) T
(3) T

amb
amb
amb

= 100 °C
=25°C
= −40 °C

Fig 2. Collector-emitter saturation voltage as a

function of collector current; typical values

PDTA114T_SER_7 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 07 — 20 April 2007 5 of 11

NXP Semiconductors

8. Package outline

PDTA114T series

PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open

1.3

1.0

0.26

0.10

1.75

1.45

1.8

1.4

3

0.9

0.7

12

0.30

1

0.15

0.45

0.15

0.95

0.60

0.25

0.10

3.1

2.7

3

3.0

1.7

2.5

1.3

12

1.9

04-11-04Dimensions in mm

0.50

0.35

0.6

0.2

Fig 3. Package outline SOT416 (SC-75) Fig 4. Package outline SOT346 (SC-59A/TO-236)

0.62

0.30

0.22

0.30

0.22

21

0.55

0.55

0.47

3

0.65

0.50

0.46

1.02

0.95

4.2

3.6

4.8

4.4

0.45

0.38

0.48

0.40

1
2

1.27

3

04-11-11Dimensions in mm

2.54

0.20

0.12

0.35
03-04-03Dimensions in mm

5.2

5.0

14.5

12.7
04-11-16Dimensions in mm

Fig 5. Package outline SOT883 (SC-101) Fig 6. Package outline SOT54 (SC-43A/TO-92)

0.45

0.38

1.27

0.48

0.40

1
2
3

1.27

2.54

05-01-10Dimensions in mm

4.2

3.6

4.8

4.4

5.2

5.0

3 max

14.5

12.7

0.45

0.38

0.48

0.40

1

2

3

5.08

2.54

04-06-28Dimensions in mm

4.2

3.6

4.8

4.4

5.2

5.0

2.5

max

14.5

12.7

Fig 7. Package outline SOT54A Fig 8. Package outline SOT54 variant

PDTA114T_SER_7 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 07 — 20 April 2007 6 of 11

NXP Semiconductors

PDTA114T series

PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open

2.5

2.1

3.0

2.8

3

0.45

0.15

1.4

1.2

12

0.48

1.9

0.38

1.1

0.9

0.15

0.09

2.2

1.8

0.4

0.3

0.45

0.15

3

2.2

1.35

2.0

1.15

12

1.3

04-11-04Dimensions in mm

Fig 9. Package outline SOT23 (TO-236AB) Fig 10. Package outline SOT323 (SC-70)

1.1

0.8

0.25

0.10

04-11-04Dimensions in mm

PDTA114T_SER_7 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 07 — 20 April 2007 7 of 11

NXP Semiconductors

9. Packing information

PDTA114T series

PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open

Table 9. Packing methods

The indicated -xxx are the last three digits of the 12NC ordering code.

Type number Package Description Packing quantity

PDTA114TE SOT416 4 mm pitch, 8 mm tape and reel -115 - -135
PDTA114TK SOT346 4 mm pitch, 8 mm tape and reel -115 - -135
PDTA114TM SOT883 2 mm pitch, 8 mm tape and reel - - -315
PDTA114TS SOT54 bulk, straight leads - -412 -

SOT54A tape and reel, wide pitch - - -116

tape ammopack, wide pitch - - -126

SOT54 variant bulk, delta pinning - -112 ­PDTA114TT SOT23 4 mm pitch, 8 mm tape and reel -215 - -235
PDTA114TU SOT323 4 mm pitch, 8 mm tape and reel -115 - -135

[1] For further information and the availability of packing methods, seeSection 12.

[1]

3000 5000 10000

PDTA114T_SER_7 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 07 — 20 April 2007 8 of 11

NXP Semiconductors

PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open

PDTA114T series

10. Revision history

Table 10. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PDTA114T_SER_7 20070420 Product data sheet - PDTA114T_SERIES_6
Modifications:

PDTA114T_SERIES_6 20040802 Product specification - PDTA114T_SERIES_5
PDTA114T_SERIES_5 20030909 Product specification - PDTA114T_SERIES_4
PDTA114T_SERIES_4 20030410 Product specification - PDTA114TE_2

PDTA114TE_2 19980723 Preliminary specification - PDTA114TE_1
PDTA114TK_3 19980515 Product specification - PDTA114TK_2
PDTA114TS_2 19980515 Product specification - PDTA114TS_1
PDTA114TT_3 19990413 Objective specification - PDTA114TT_2
PDTA114TU_3 19990413 Product specification - PDTA114TU_2

• The format of this data sheet has been redesigned to comply with the new identity

guidelines of NXP Semiconductors.

• Legal texts have been adapted to the new company name where appropriate.

• Type number PDTA114TEF removed

• Section 1.2 “Features”: amended

• Section 1.3 “Applications”: amended

• Table 4 “Ordering information”: added

• Table 5 “Marking codes”: enhanced table note section

• Table 6 “Limiting values”: I

peak collector current conditions added

CM

• Figure 1, 2, 7 and 8: added

• Figure 3, 4, 5, 6, 9 and 10: superseded by minimized package outline drawings

• Section 9 “Packing information”: added

• Section 11 “Legal information”: updated

PDTA114TK_3
PDTA114TS_2
PDTA114TT_3
PDTA114TU_3

PDTA114T_SER_7 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 07 — 20 April 2007 9 of 11

NXP Semiconductors

11. Legal information

11.1 Data sheet status

PDTA114T series

PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s)described inthis document may have changed since thisdocument waspublished and may differin case ofmultiple devices.The latestproduct status

information is available on the Internet at URL

[1][2]

Product status

11.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information includedherein and shallhave no liabilityfor the consequencesof
use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet
with thesame product typenumber(s) and title.A short data sheet isintended
for quickreference only and shouldnot be relied upon tocontain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.

11.3 Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXPSemiconductors does not giveany representations or
warranties, expressed or implied, as tothe accuracy or completenessof such
information and shall have no liability for the consequences of use of such
information.

Right to make changes — NXP Semiconductors reserves the right tomake
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. Thisdocument supersedes and replaces all informationsupplied prior
to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or

[3]

http://www.nxp.com.

Definition

malfunction ofa NXP Semiconductorsproduct can reasonablybe expectedto
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in
the Absolute MaximumRatings System of IEC 60134)may cause permanent
damage tothe device. Limitingvalues are stress ratingsonly and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions ofcommercial sale, as published
at

http://www.nxp.com/profile/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.

No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of anylicense under any copyrights, patents
or other industrial or intellectual property rights.

11.4 Trademarks

Notice: Allreferenced brands,product names, servicenames and trademarks
are the property of their respective owners.

12. Contact information

For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: [email protected]

PDTA114T_SER_7 © NXP B.V. 2007. All rights reserved.

Product data sheet Rev. 07 — 20 April 2007 10 of 11

NXP Semiconductors

PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open

13. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 3

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4

6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6

9 Packing information. . . . . . . . . . . . . . . . . . . . . . 8

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9

11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10

11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10

11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 10

11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10

12 Contact information. . . . . . . . . . . . . . . . . . . . . 10

13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

PDTA114T series

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2007. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]

Date of release: 20 April 2007

Document identifier: PDTA114T_SER_7