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Philips Semiconductors Product specification
Rectifier diodes PBYR30100PT series
schottky barrier
GENERAL DESCRIPTION QUICK REFERENCE DATA
Dual, low leakage, platinum barrier SYMBOL PARAMETER MAX. MAX. MAX. UNIT
schottky rectifier diodes in a plastic
envelope featuring low forward PBYR30- 60PT 80PT 100PT
voltage drop and absence of stored V
RRM
charge.Thesedevices can withstand voltage
reverse voltage transients and have V
guaranteed reverse surge capability. I
F
O(AV)
The devices are intended for use in diodes conducting)
switched mode power supplies and
high frequency circuits in general
where low conduction and zero
switching losses are important.
PINNING - SOT93 PIN CONFIGURATION SYMBOL
Repetitive peak reverse 60 80 100 V
Forward voltage 0.7 0.7 0.7 V
Output current (both 30 30 30 A
PIN DESCRIPTION
tab
1 Anode 1 (a)
a1
a2
2 Cathode (k)
3 Anode 2 (a)
tab Cathode (k)
1 2 3
k
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
V
RWM
V
R
I
O(AV)
I
O(RMS)
I
FRM
I
FSM
Repetitive peak reverse voltage - 60 80 100 V
Crest working reverse voltage - 60 80 100 V
Continuous reverse voltage Tmb ≤ 139 ˚C - 60 80 100 V
Output current (both diodes square wave; δ = 0.5; - 30 A
conducting)
1
Tmb ≤ 124 ˚C
RMS forward current - 43 A
Repetitive peak forward current t = 25 µs; δ = 0.5; - 30 A
per diode Tmb ≤ 124 ˚C
Non-repetitive peak forward t = 10 ms - 180 A
current per diode. t = 8.3 ms - 200 A
sinusoidal; Tj = 125 ˚C prior
to surge; with reapplied
V
I2t I2t for fusing t = 10 ms - 162 A2s
I
RRM
Repetitive peak reverse current tp = 2 µs; δ = 0.001 - 1 A
RWM(max)
per diode.
I
RSM
T
T
stg
j
Non-repetitive peak reverse tp = 100 µs - 1 A
current per diode.
Storage temperature -65 175 ˚C
Operating junction temperature - 150 ˚C
-60 -80 -100
1 For output currents in excess of 20 A connection should be made to the exposed metal mounting base.
October 1994 1 Rev 1.100
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Philips Semiconductors Product Specification
Rectifier Diode PBYR30100PT series
Schottky Barrier
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
R
th j-a
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
C
d
Thermal resistance junction to per diode - - 1.4 K/W
mounting base both diodes - - 1.0 K/W
Thermal resistance junction to in free air. - 45 - K/W
ambient
Forward voltage (per diode) IF = 15 A; Tj = 125˚C - 0.61 0.70 V
IF = 30 A; Tj = 125˚C - 0.74 0.85 V
IF = 15 A; Tj = 25˚C - 0.77 0.85 V
Reverse current (per diode) VR = V
VR = V
; Tj = 25 ˚C - 5.0 150 µA
RWM
; Tj = 125 ˚C - 5.0 15 mA
RWM
Junction capacitance (per f = 1MHz; VR = 5V; Tj = 25 ˚C to - 600 - pF
diode) 125 ˚C
October 1994 2 Rev 1.100