Philips PBYR2100CT, PBYR280CT, PBYR290CT Datasheet

DATA SH EET

Product specification
Supersedes data of 1996 May 03
File under Discrete Semiconductors, SC01

1996 Oct 14

DISCRETE SEMICONDUCTORS

PBYR2100CT series

Schottky barrier double diodes

page

M3D087

1996 Oct 14 2

Philips Semiconductors Product specification

Schottky barrier double diodes PBYR2100CT series

FEATURES

• Low switching losses

• High breakdown voltage

• Fast recovery time

• Guard ring protected

• Plastic SMD package.

APPLICATIONS

• Low power, switched-mode power
supplies

• Rectification

• Polarity protection.

DESCRIPTION

The PBYR2100CT series consists of
Schottky barrier double diodes,
fabricated in planar technology, and
encapsulated in SOT223 plastic SMD
packages.

PINNING

PIN DESCRIPTION

1 anode (a

1

)
2 common cathode
3 anode (a

2

)
4 common cathode

MARKING

TYPE NUMBER

MARKING

CODE

PBYR280CT BYR28
PBYR290CT BYR29
PBYR2100CT BYR210

4

123

Top view

MAM086

4

1

3

2

Fig.1 Simplified outline (SOT223), pin configuration and symbol.

1996 Oct 14 3

Philips Semiconductors Product specification

Schottky barrier double diodes PBYR2100CT series

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Notes

1. Refer to SOT223 standard mounting conditions.

2. For Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse power
losses P

R

are a significant part of the total power losses. Nomograms for determination of the reverse power losses

PR and I

F(AV)

rating will be available on request.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per diode

V

R

continuous reverse voltage

PBYR280CT

−

80 V

PBYR290CT

−

90 V

PBYR2100CT

−

100 V

V

RRM

repetitive peak reverse voltage

PBYR280CT

−

80 V

PBYR290CT

−

90 V

PBYR2100CT

−

100 V

V

RWM

crest working reverse voltage

PBYR280CT

−

80 V

PBYR290CT

−

90 V

PBYR2100CT

−

100 V

I

F(AV)

average forward current

T

amb

=85°C; see Fig.2;

R

th j-a

= 70 K/W; note 1;

V

R(equiv)

= 0.2 V; note 2

−

1A

I

FSM

non-repetitive peak forward current t = 8.3 ms half sine wave;

JEDEC method

−

10 A

I

RSM

non-repetitive peak reverse current tp= 100 µs

−

0.5 A

T

stg

storage temperature

−65

+150 °C

T

j

junction temperature

−65

+150 °C

T

amb

operating ambient temperature

−

85 °C