Philips PBYR2545CT, PBYR2545CTB, PBYR2535CT, PBYR2535CTB, PBYR2540CT Datasheet
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Philips Semiconductors Product specification
Rectifier diodes PBYR2545CT, PBYR2545CTB series
Schottky barrier
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop V
R
= 40 V/ 45 V
• Fast switching
• Reverse surge capability I
O(AV)
= 30 A
• High thermal cycling performance
• Low thermal resistance V
F
≤ 0.62 V
GENERAL DESCRIPTION
Dual, common cathode schottky rectifier diodes in a conventional leaded plastic package and a surface mounting
plastic package. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies.
The PBYR2545CT series is supplied in the SOT78 conventional leaded package.
The PBYR2545CTB series is supplied in the SOT404 surface mounting package.
PINNING SOT78 (TO220AB) SOT404
PIN DESCRIPTION
1 anode 1 (a)
2 cathode (k)
1
3 anode 2 (a)
tab cathode (k)
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
PBYR25 40CT 45CT
PBYR25 40CTB 45CTB
V
RRM
Peak repetitive reverse - 40 45 V
voltage
V
RWM
Working peak reverse - 40 45 V
voltage
V
R
Continuous reverse voltage Tmb ≤ 113 ˚C - 40 45 V
I
O(AV)
Average rectified forward square wave; δ = 0.5; - 30 A
current (both diodes Tmb ≤ 126 ˚C
conducting)
2
I
FRM
Repetitive peak forward square wave; δ = 0.5; - 30 A
current per diode Tmb ≤ 126 ˚C
I
FSM
Non-repetitive peak forward t = 10 ms - 180 A
current per diode t = 8.3 ms - 200 A
sinusoidal; Tj = 125 ˚C prior to
surge; with reapplied V
RRM(max)
I
RRM
Peak repetitive reverse pulse width and repetition rate - 1 A
surge current per diode limited by T
j max
T
j
Operating junction - 150 ˚C
temperature
T
stg
Storage temperature - 65 175 ˚C
1. It is not possible to make connection to pin 2 of the SOT404 package.
2. SOT78 package. For output currents greater than 20A the cathode connection should be made to the metal
mounting tab.
k
a1
a2
13
2
13
tab
2
123
tab
October 1998 1 Rev 1.400
Philips Semiconductors Product specification
Rectifier diodes PBYR2545CT, PBYR2545CTB series
Schottky barrier
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction per diode - - 1.5 K/W
to mounting base both diodes - - 1 K/W
R
th j-a
Thermal resistance junction SOT78 package in free air - 60 - K/W
to ambient SOT404 package, pcb mounted, minimum - 50 - K/W
footprint, FR4 board
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
Forward voltage per diode IF = 20 A; Tj = 125˚C - 0.58 0.62 V
IF = 30 A; Tj = 125˚C - 0.72 0.76 V
IF = 30 A - 0.72 0.82 V
I
R
Reverse current per diode VR = V
RWM
- 0.3 2 mA
VR = V
RWM
; Tj = 100˚C - 30 40 mA
C
d
Junction capacitance per VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C - 530 - pF
diode
October 1998 2 Rev 1.400
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