Philips PBYR2540CTF, PBYR2545CTF Datasheet
Philips Semiconductors Product specification
Rectifier diodes PBYR2545CTF, PBYR2545CTX
Schottky barrier
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop
• Fast switching V
• Reverse surge capability
• High thermal cycling performance I
a1
13
a2
• Isolated mounting tab
k
2
GENERAL DESCRIPTION
Dual, common cathode schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended
for use as output rectifiers in low voltage, high frequency switched mode power supplies.
The PBYR2545CTF is supplied in the SOT186 package.
The PBYR2545CTX is supplied in the SOT186A package.
PINNING SOT186 SOT186A
= 40 V/ 45 V
R
= 20 A
O(AV)
VF ≤ 0.65V
PIN DESCRIPTION
case
case
1 anode 1 (a)
2 cathode (k)
3 anode 2 (a)
tab isolated
123
123
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
PBYR25 40CTF 45CTF
PBYR25 40CTX 45CTX
V
V
V
I
O(AV)
I
FRM
I
FSM
I
RRM
T
T
RRM
RWM
R
j
stg
Peak repetitive reverse - 40 45 V
voltage
Working peak reverse - 40 45 V
voltage
Continuous reverse voltage Ths ≤ 86 ˚C - 40 45 V
Average rectified output square wave; δ = 0.5; - 20 A
current (both diodes Ths ≤ 98 ˚C
conducting)
Repetitive peak forward square wave; δ = 0.5; - 20 A
current per diode Ths ≤ 98 ˚C
Non-repetitive peak forward t = 10 ms - 135 A
current per diode t = 8.3 ms - 150 A
sinusoidal; Tj = 125 ˚C prior to
Peak repetitive reverse pulse width and repetition rate - 1 A
surge; with reapplied V
surge current per diode limited by T
j max
RRM(max)
Operating junction - 150 ˚C
temperature
Storage temperature - 65 175 ˚C
October 1998 1 Rev 1.300
Philips Semiconductors Product specification
Rectifier diodes PBYR2545CTF, PBYR2545CTX
Schottky barrier
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
V
isol
C
isol
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-hs
R
th j-a
Peak isolation voltage from SOT186 package; R.H. ≤ 65%; clean and - - 1500 V
all terminals to external dustfree
heatsink
R.M.S. isolation voltage from SOT186A package; f = 50-60 Hz; - - 2500 V
all terminals to external sinusoidal waveform; R.H. ≤ 65%; clean
heatsink and dustfree
Capacitance from pin 2 to f = 1 MHz - 10 - pF
external heatsink
Thermal resistance junction per diode - - 4.8 K/W
to heatsink both diodes - - 4 K/W
(with heatsink compound)
Thermal resistance junction in free air - 55 - K/W
to ambient
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
C
d
Forward voltage per diode IF = 20 A; Tj = 125˚C - 0.58 0.65 V
IF = 20 A - 0.63 0.68 V
Reverse current per diode VR = V
VR = V
RWM
; Tj = 100˚C - 30 40 mA
RWM
- 0.3 2 mA
Junction capacitance per VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C - 530 - pF
diode
October 1998 2 Rev 1.300
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