Philips PBYR2520CT, PBYR2525CT Datasheet
Philips Semiconductors Product specification
Rectifier diodes PBYR2525CT series
schottky barrier
GENERAL DESCRIPTION QUICK REFERENCE DATA
Dual nickel silicide schottky barrier SYMBOL PARAMETER MAX. MAX. UNIT
rectifier diodes in a plastic envelope
featuring low forward voltage drop PBYR25- 20CT 25CT
andabsenceofstoredcharge.These V
RRM
devices can withstand reverse voltage
voltage transients and have V
guaranteed reverse surge capability. I
F
O(AV)
The devices are intended for use in diodes conducting)
switched mode power supplies with
3 V - 3.3 V outputs, or as or-ing
diodes in fault tolerant power supply
systems.
PINNING - TO220AB PIN CONFIGURATION SYMBOL
Repetitive peak reverse 20 25 V
Forward voltage 0.41 0.41 V
Average output current (both 30 30 A
PIN DESCRIPTION
1 anode 1 (a)
2 cathode (k)
tab
a1
a2
13
3 anode 2 (a)
k
tab cathode (k)
123
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RRM
V
RWM
V
R
I
O(AV)
I
O(RMS)
Repetitive peak reverse voltage - 20 25 V
Crest working reverse voltage - 20 25 V
Continuous reverse voltage Tmb ≤ 109 ˚C - 20 25 V
Average output current (both square wave; δ = 0.5; - 30 A
diodes conducting) Tmb ≤ 135 ˚C
RMS output current (both - 43 A
diodes conducting)
I
FRM
I
FSM
I2tI
I
RRM
I
RSM
Repetitive peak forward current t = 25 µs; δ = 0.5; - 30 A
per diode Tmb ≤ 135 ˚C
Non-repetitive peak forward t = 10 ms - 180 A
current, per diode t = 8.3 ms - 200 A
2
t for fusing t = 10 ms - 162 A2s
Repetitive peak reverse current tp = 2 µs; δ = 0.001 - 2 A
per diode
Non-repetitive peak reverse tp = 100 µs-2A
current per diode
T
stg
T
j
Storage temperature -65 175 ˚C
Operating junction temperature - 150 ˚C
sinusoidal Tj = 125 ˚C prior
to surge; with reapplied
V
RRM(max)
-20 -25
January 1997 1 Rev 1.000
Philips Semiconductors Product specification
Rectifier diodes PBYR2525CT series
schottky barrier
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
R
th j-a
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
I
R
C
d
Thermal resistance junction to per diode - - 1.5 K/W
mounting base both diodes - - 1.0 K/W
Thermal resistance junction to in free air - 60 - K/W
ambient
Forward voltage (per diode) IF = 15 A; Tj = 125˚C - 0.33 0.41 V
IF = 30 A; Tj = 125˚C - 0.43 0.50 V
IF = 30 A - 0.51 0.60 V
Reverse current (per diode) VR = V
VR = V
RRM
; Tj = 100 ˚C - 30 80 mA
RRM
- 2.0 10 mA
Junction capacitance (per f = 1MHz; VR = 5V; Tj = 25 ˚C to - 900 - pF
diode) 125 ˚C
January 1997 2 Rev 1.000
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