Philips PBYR2520CT, PBYR2525CT Datasheet

Philips Semiconductors Product specification

Rectifier diodes

PBYR2525CT series

schottky barrier

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Dual nickel silicide schottky barrier

SYMBOL

PARAMETER

MAX.

MAX.

UNIT

rectifier diodes in a plastic envelope

PBYR25-

20CT

25CT

featuring low forward voltage drop

and absence of stored charge. These

VRRM

Repetitive peak reverse

20

25

V

devices

can withstand

reverse

voltage

voltage

transients

and

have

VF

Forward voltage

0.41

0.41

V

guaranteed reverse surge capability.

IO(AV)

Average output current (both

30

30

A

The devices are intended for use in

diodes conducting)

switched mode power supplies with

3 V - 3.3 V outputs,

or

as

or-ing

diodes in fault tolerant power supply

systems.

PINNING - TO220AB

PIN CONFIGURATION

SYMBOL

PIN

DESCRIPTION

tab

1

anode 1 (a)

a1

a2

2

cathode (k)

1

3

3

anode 2 (a)

tab

cathode (k)

1 2 3

k

2

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL	PARAMETER	CONDITIONS	MIN.		MAX.		UNIT
				-20		-25
VRRM	Repetitive peak reverse voltage		-	20		25	V
VRWM	Crest working reverse voltage	Tmb ≤ 109 ˚C	-	20		25	V
VR	Continuous reverse voltage		-	20		25	V
IO(AV)	Average output current (both	square wave; δ = 0.5;	-		30		A
IO(RMS)	diodes conducting)	Tmb ≤ 135 ˚C
	RMS output current (both		-		43		A
IFRM	diodes conducting)	t = 25 μs; δ = 0.5;
	Repetitive peak forward current		-		30		A
	per diode	Tmb ≤ 135 ˚C
IFSM	Non-repetitive peak forward	t = 10 ms	-		180		A
	current, per diode	t = 8.3 ms	-		200		A
		sinusoidal Tj = 125 ˚C prior
		to surge; with reapplied
I2t	I2t for fusing	VRRM(max)	-		162		A2s
		t = 10 ms
IRRM	Repetitive peak reverse current	tp = 2 μs; δ = 0.001	-		2		A
	per diode	tp = 100 μs
IRSM	Non-repetitive peak reverse		-		2		A
	current per diode
Tstg	Storage temperature		-65		175		˚C
Tj	Operating junction temperature		-		150		˚C

January 1997

1

Rev 1.000

Philips Semiconductors Product specification

Rectifier diodes			PBYR2525CT series
schottky barrier
THERMAL RESISTANCES
SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
Rth j-mb	Thermal resistance junction to	per diode	-	-	1.5	K/W
	mounting base	both diodes	-	-	1.0	K/W
Rth j-a	Thermal resistance junction to	in free air	-	60	-	K/W
	ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL	PARAMETER	CONDITIONS	MIN.	TYP.	MAX.	UNIT
VF	Forward voltage (per diode)	IF = 15 A; Tj = 125˚C	-	0.33	0.41	V
		IF = 30 A; Tj = 125˚C	-	0.43	0.50	V
IR		IF = 30 A	-	0.51	0.60	V
	Reverse current (per diode)	VR = VRRM	-	2.0	10	mA
		VR = VRRM; Tj = 100 ˚C	-	30	80	mA
Cd	Junction capacitance (per	f = 1MHz; VR = 5V; Tj = 25 ˚C to	-	900	-	pF
	diode)	125 ˚C

January 1997

2

Rev 1.000