Datasheet PBSS5520X Datasheet (Philips)

查询PBSS5520X供应商

DISCRETE SEMICONDUCTORS

DATA SH EET

ook, halfpage

M3D109

PBSS5520X

20 V, 5 A
PNP low V

Product specification
Supersedes data of 2004 Jun 23

CEsat

(BISS) transistor

2004 Nov 08

Philips Semiconductors Product specification

20 V, 5 A
PNP low V

CEsat

FEATURES

• High hFE and low V

• High collector current IC: 5 A

• High efficiency leading to less heat generation.

APPLICATIONS

• Medium power peripheral drivers(e.g.fans and motors)

• Strobe flash units for digital still cameras and mobile

phones

• Power switch for LAN and ADSL systems

• Medium power DC-to-DC conversion

• Battery chargers

• Supply line switching.

DESCRIPTION

PNP low V

(BISS) transistor in a SOT89 (SC-62)

CEsat

plastic package.
NPN complement: PBSS4520X.

(BISS) transistor

at high current operation

CEsat

PBSS5520X

QUICK REFERENCE DATA

SYMBOL PARAMETER MAX. UNIT

V

CEO

I

C

I

CM

R

CEsat

PINNING

PIN DESCRIPTION

1 emitter
2 collector
3 base

collector-emitter voltage −20 V
collector current (DC) −5A
peak collector current −10 A
equivalent on-resistance 54 mΩ

2

MARKING

TYPE NUMBER MARKING CODE

PBSS5520X *1K

(1)

321

Note

1. * = p: made in Hong Kong.
* = t: made in Malaysia.

Fig.1 Simplified outline (SOT89) and symbol.

* = W: made in China.

ORDERING INFORMATION

PACKAGE

TYPE NUMBER

NAME DESCRIPTION VERSION

PBSS5520X SC-62 plastic surface mounted package; collector pad for

good heat transfer; 3 leads

3

1

sym079

SOT89

2004 Nov 08 2

Philips Semiconductors Product specification

20 V, 5 A

PBSS5520X

PNP low V

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
V
I

C

I

CM

I

CRP

I

B

I

BM

P

T
T
T

CBO
CEO
EBO

tot

stg
j
amb

collector-base voltage open emitter −−20 V
collector-emitter voltage open base −−20 V
emitter-base voltage open collector −−5V
collector current (DC) −−5A
peak collector current tp≤ 1ms −−10 A
repetitive peak collector current notes 1 and 2 −−6.5 A
base current (DC) −−1A
peak base current tp≤ 1ms −−2A
total power dissipation T

storage temperature −65 +150 °C
junction temperature − 150 °C
ambient temperature −65 +150 °C

(BISS) transistor

CEsat

≤ 25 °C

amb

notes 1 and 2 − 2.5 W
note 2 − 0.55 W
note 3 − 1W
note 4 − 1.4 W
note 5 − 1.6 W

Notes

1. Operated under pulsed conditions; pulse width tp≤ 10 ms; duty cycle δ≤0.2.

2. Device mounted on a printed-circuit board, single-sided copper, tin-plated, standard footprint.

3. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm2.

4. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2.

5. Device mounted on a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper, tin-plated.

2004 Nov 08 3

Philips Semiconductors Product specification

20 V, 5 A
PNP low V

1600

P

tot

(mW)

1200

800

400

(1) FR4 PCB; 6 cm2 mounting pad for collector.
(2) FR4 PCB; 1 cm2 mounting pad for collector.
(3) FR4 PCB; standard footprint.

(1)

(2)

(3)

0

−50 20015050 1000

(BISS) transistor

CEsat

001aaa229

T

(°C)

amb

PBSS5520X

Fig.2 Power derating curves.

2004 Nov 08 4

Philips Semiconductors Product specification

20 V, 5 A

PBSS5520X

PNP low V

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th(j-a)

R

th(j-s)

Notes

1. Operated under pulsed conditions; pulse width tp≤ 10 ms; duty cycle δ≤0.2.

2. Device mounted on a printed-circuit board, single-sided copper, tin-plated, standard footprint.

3. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm2.

4. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2.

5. Device mounted on a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper, tin-plated.

thermal resistance from junction to ambient in free air

thermal resistance from junction to soldering point 16 K/W

(BISS) transistor

CEsat

notes 1 and 2 50 K/W
note 2 225 K/W
note 3 125 K/W
note 4 90 K/W
note 5 80 K/W

3

10

Z

th

(K/W)

2

10

10

1

−1

10

−5

10

Mounted on FR4 printed-circuit board; standard footprint.

(1) δ =1.
(2) δ = 0.75.

(1)
(2)

(3)
(4)
(5)

(6)
(7)
(8)
(9)

(10)

−4

10

(3) δ = 0.5.
(4) δ = 0.33.

−3

10

(5) δ = 0.2.
(6) δ = 0.1.

Fig.3 Transient thermal impedance as a function of pulse time; typical values.

−2

−1

10

(7) δ = 0.05.
(8) δ = 0.02.

1

(9) δ = 0.01.
(10) δ =0.

006aaa232

1010

2

10

tp (s)

3

10

2004 Nov 08 5

Philips Semiconductors Product specification

20 V, 5 A
PNP low V

3

10

Z

th

(K/W)

Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2.

(1)

2

10

10

(2)

(3)

(4)

(5)
(6)

(7)
(8)

(9)

1

(10)

−1

10

−5

10

(BISS) transistor

CEsat

−4

10

−3

10

−2

PBSS5520X

006aaa233

−1

10

1

1010

2

10

tp (s)

3

10

(1) δ =1.
(2) δ = 0.75.

3

10

Z

th

(K/W)

2

10

10

1

−1

10

−5

10

(1)

(3)
(5)

(6)
(7)

(8)
(9)

(10)

(3) δ = 0.5.
(4) δ = 0.33.

(5) δ = 0.2.
(6) δ = 0.1.

(7) δ = 0.05.
(8) δ = 0.02.

(9) δ = 0.01.
(10) δ =0.

Fig.4 Transient thermal impedance as a function of pulse time; typical values.

(2)
(4)

−4

10

−3

10

−2

−1

10

1

1010

006aaa234

2

10

tp (s)

3

10

Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm2.

(1) δ =1.
(2) δ = 0.75.

(3) δ = 0.5.
(4) δ = 0.33.

(5) δ = 0.2.
(6) δ = 0.1.

(7) δ = 0.05.
(8) δ = 0.02.

Fig.5 Transient thermal impedance as a function of pulse time; typical values.

2004 Nov 08 6

(9) δ = 0.01.
(10) δ =0.

Philips Semiconductors Product specification

20 V, 5 A

PBSS5520X

PNP low V

CHARACTERISTICS

T

=25°C unless otherwise specified.

amb

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

I

EBO

I

CES

h

V

R
V

V
f

T

C

FE

CEsat

CEsat

BEsat

BEon

c

collector-base cut-off current VCB= −20 V; IE=0A −−−100 nA

emitter-base cut-off current VEB= −5 V; IC=0A −−−100 nA
collector-emitter cut-off current VCE= −20 V; VBE=0V −−−100 nA
DC current gain VCE= −2V

collector-emitter saturation voltage IC= −0.5 A; IB= −5mA −−45 −70 mV

equivalent on-resistance IC= −5 A; IB= −500 mA; note 1 − 34 54 mΩ
base-emitter saturation voltage IC= −4 A; IB= −200 mA; note 1 −−0.9 −1.05 V

base-emitter turn-on voltage VCE= −2 V; IC= −2A −−0.74 −0.85 V
transition frequency IC= −100 mA; VCE= −10 V;

collector capacitance VCB= −10 V; IE=ie=0A;

(BISS) transistor

CEsat

= −20 V; IE= 0 A; Tj= 150 °C −−−50 µA

V

CB

IC= −0.5 A; note 1 300 430 −
IC= −1 A; note 1 275 400 −
IC= −2 A; note 1 250 360 −
IC= −5 A; note 1 150 260 −

IC= −1 A; IB= −10 mA −−70 −110 mV
IC= −2.5 A; IB= −125 mA; note 1 −−100 −150 mV
IC= −4 A; IB= −200 mA; note 1 −−150 −230 mV
IC= −5 A; IB= −500 mA; note 1 −−170 −270 mV

IC= −5 A; IB= −500 mA; note 1 −−0.96 −1.1 V

80 100 − MHz

f = 100 MHz

− 130 150 pF

f = 1 MHz

Note

1. Pulse test: t

≤ 300 µs; δ≤0.02.

p

2004 Nov 08 7

Philips Semiconductors Product specification

20 V, 5 A
PNP low V

−0.25
I

C

(A)

−0.20

−0.15

−0.10

−0.05

0

0 −2.0−1.6−0.8 −1.2−0.4

(1) IB= −64 mA.
(2) IB= −57.6 mA.
(3) IB= −51.2 mA.
(4) IB= −44.8 mA.

(BISS) transistor

CEsat

(5) IB= −38.4 mA.
(6) IB= −32 mA.
(7) IB= −25.6 mA.

001aaa772

(5)(4)(3)(2)(1)

(6)
(7)

(8)
(9)

(10)

VCE (V)

(8) IB= −19.2 mA.
(9) IB= −12.8 mA.
(10) IB= −6.4 mA.

−1200

V

BE

(mV)

−800

−400

0

−1

−10

VCE= −2V.
(1) T

amb

(2) T

amb

(3) T

amb

(1)

(2)

(3)

−1 −10

= −55 °C.
=25°C.
= 100 °C.

−10

PBSS5520X

001aaa773

−10

3

I

C

(mA)

−10

2

4

Fig.6 Collector current as a function of

collector-emitter voltage; typical values.

1000

h

FE

800

600

400

200

0

−1

−10

VCE= −2V.
(1) T

amb

(2) T

amb

(3) T

amb

(1)

(2)

(3)

−1 −10

= 100 °C.
=25°C.
= −55 °C.

−10

001aaa774

−10

3

I

2

(mA)

C

−10

Fig.7 Base-emitter voltage as a function of

collector current; typical values.

2

10

R

CEsat

(Ω)

10

1

−1

10

−2

4

10

−1

−10

−1 −10

−10

IC/IB= 20.
(1) T
(2) T
(3) T

amb
amb
amb

= 100 °C.
=25°C.
= −55 °C.

001aaa775

(1)
(2)

(3)

−10

3

IC (mA)

2

−10

4

Fig.8 DC current gain as a function of collector

current; typical values.

2004 Nov 08 8

Fig.9 Equivalent on-resistance as a function of

collector current; typical values.

Philips Semiconductors Product specification

20 V, 5 A
PNP low V

3

−10

V

CEsat

(mV)

2

−10

−10

−1

−1

−10

IC/IB= 20.
(1) T

amb

(2) T

amb

(3) T

amb

−1 −10

= 100 °C.
=25°C.
= −55 °C.

(BISS) transistor

CEsat

(1)
(2)

−10

2

(3)

−10

001aaa776

3

−10

I

(mA)

C

PBSS5520X

3

−10

V

CEsat

(mV)

2

−10

(1)
(2)

−10

T

amb

−1

−1

−10

=25°C.

−1 −10

−10

4

(3)

(1) IC/IB= 100.
(2) IC/IB= 50.
(3) IC/IB= 10.

001aaa777

(mA)

−10

4

−10

3

I

C

2

Fig.10 Collector-emitter saturation voltage as a

function of collector current; typical values.

−1200

V

BEsat

(mV)

−800

−400

0

−10

IC/IB= 20.
(1) T

amb

(2) T

amb

(3) T

amb

(1)

(2)

(3)

−1

−1 −10

= −55 °C.
=25°C.
= 150 °C.

−10

001aaa778

(mA)

C

−10

4

−10

3

I

2

Fig.11 Collector-emitter saturation voltage as a

function of collector current; typical values.

−1200

V

BEon

(mV)

−800

−400

0

−1

−10

T

=25°C; VCE= −2V.

amb

−1 −10

−10

001aaa779

−10

3

I

C

(mA)

−10

2

4

Fig.12 Base-emitter saturation voltage as a

function of collector current; typical values.

2004 Nov 08 9

Fig.13 Base-emitter turn-on voltage as a function

of collector current; typical values.

Philips Semiconductors Product specification

20 V, 5 A
PNP low V

Reference mounting conditions

40

mm

2.5 mm

0.5 mm

3.96 mm

(BISS) transistor

CEsat

32 mm

2.5 mm
1 mm

3 mm

1 mm

1.6 mm

001aaa234

5 mm

handbook, halfpage

40 mm

2.5 mm

0.5 mm

3.96 mm

PBSS5520X

32 mm

10 mm

10 mm

1 mm

5 mm

1.6 mm

MLE322

Fig.14 FR4, standard footprint.

32 mm
30 mm

40

mm

2.5 mm

0.5 mm

3.96 mm

1 mm

001aaa235

Fig.15 FR4, mounting pad for collector 1 cm2.

20

mm

5 mm

1.6 mm

Fig.16 FR4, mounting pad for collector 6 cm2.

2004 Nov 08 10

Philips Semiconductors Product specification

20 V, 5 A

PBSS5520X

PNP low V

PACKAGE OUTLINE

Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89

(BISS) transistor

CEsat

D

b

p3

B

A

123

w M

DIMENSIONS (mm are the original dimensions)

UNIT

mm

1.6

1.4

A

b

p1

0.48

0.35

b

p2

0.53

0.40

b

1.8

1.4

p3

c

0.44

0.23

E

L

b

p2

b

p1

e

1

e

0 2 4 mm

scale

D

E

e

e

1

4.6

2.6

3.0

4.4

2.4

1.5

p

H

4.25

3.75

H

E

c

L

1.2

0.8

w

p

0.13

E

OUTLINE
VERSION

SOT89 TO-243 SC-62

IEC JEDEC JEITA

REFERENCES

2004 Nov 08 11

EUROPEAN

PROJECTION

ISSUE DATE

99-09-13
04-08-03

Philips Semiconductors Product specification

20 V, 5 A

PBSS5520X

PNP low V

DATA SHEET STATUS

LEVEL

I Objective data Development This data sheet contains data from the objective specification for product

II Preliminary data Qualification This data sheet contains data from the preliminary specification.

III Product data Production This data sheet contains data from the product specification. Philips

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was

3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

DATA SHEET

STATUS

published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

(BISS) transistor

CEsat

(1)

PRODUCT

STATUS

(2)(3)

development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.

Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).

DEFINITION

DEFINITIONS
Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratanyother conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuchapplicationswillbe
suitable for the specified use without further testing or
modification.

DISCLAIMERS
Life support applications  These products are not

designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes in the products ­including circuits, standard cells, and/or software ­described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.

2004 Nov 08 12

Philips Semiconductors – a w orldwide compan y

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: [phone]
For sales offices addresses send e-mail to: [e-mail].

© Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands R75/02/pp13 Date of release:2004 Nov 08 Document order number: 9397 750 13892

SCA76