Philips PBSS5520X Technical data
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M3D109
PBSS5520X
20 V, 5 A
PNP low V
Product specification
Supersedes data of 2004 Jun 23
CEsat
(BISS) transistor
2004 Nov 08
Philips Semiconductors Product specification
20 V, 5 A
PNP low V
CEsat
FEATURES
• High hFE and low V
• High collector current IC: 5 A
• High efficiency leading to less heat generation.
APPLICATIONS
• Medium power peripheral drivers(e.g.fans and motors)
• Strobe flash units for digital still cameras and mobile
phones
• Power switch for LAN and ADSL systems
• Medium power DC-to-DC conversion
• Battery chargers
• Supply line switching.
DESCRIPTION
PNP low V
(BISS) transistor in a SOT89 (SC-62)
CEsat
plastic package.
NPN complement: PBSS4520X.
(BISS) transistor
at high current operation
CEsat
PBSS5520X
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
I
C
I
CM
R
CEsat
PINNING
PIN DESCRIPTION
1 emitter
2 collector
3 base
collector-emitter voltage −20 V
collector current (DC) −5A
peak collector current −10 A
equivalent on-resistance 54 mΩ
2
MARKING
TYPE NUMBER MARKING CODE
PBSS5520X *1K
(1)
321
Note
1. * = p: made in Hong Kong.
* = t: made in Malaysia.
Fig.1 Simplified outline (SOT89) and symbol.
* = W: made in China.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME DESCRIPTION VERSION
PBSS5520X SC-62 plastic surface mounted package; collector pad for
good heat transfer; 3 leads
3
1
sym079
SOT89
2004 Nov 08 2
Philips Semiconductors Product specification
20 V, 5 A
PBSS5520X
PNP low V
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
C
I
CM
I
CRP
I
B
I
BM
P
T
T
T
CBO
CEO
EBO
tot
stg
j
amb
collector-base voltage open emitter −−20 V
collector-emitter voltage open base −−20 V
emitter-base voltage open collector −−5V
collector current (DC) −−5A
peak collector current tp≤ 1ms −−10 A
repetitive peak collector current notes 1 and 2 −−6.5 A
base current (DC) −−1A
peak base current tp≤ 1ms −−2A
total power dissipation T
storage temperature −65 +150 °C
junction temperature − 150 °C
ambient temperature −65 +150 °C
(BISS) transistor
CEsat
≤ 25 °C
amb
notes 1 and 2 − 2.5 W
note 2 − 0.55 W
note 3 − 1W
note 4 − 1.4 W
note 5 − 1.6 W
Notes
1. Operated under pulsed conditions; pulse width tp≤ 10 ms; duty cycle δ≤0.2.
2. Device mounted on a printed-circuit board, single-sided copper, tin-plated, standard footprint.
3. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
4. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
5. Device mounted on a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper, tin-plated.
2004 Nov 08 3
Philips Semiconductors Product specification
20 V, 5 A
PNP low V
1600
P
tot
(mW)
1200
800
400
(1) FR4 PCB; 6 cm2 mounting pad for collector.
(2) FR4 PCB; 1 cm2 mounting pad for collector.
(3) FR4 PCB; standard footprint.
(1)
(2)
(3)
0
−50 20015050 1000
(BISS) transistor
CEsat
001aaa229
T
(°C)
amb
PBSS5520X
Fig.2 Power derating curves.
2004 Nov 08 4
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