Page 1
查询PBSS5160DS供应商
PBSS5160DS
60 V, 1 A PNP low V
Rev. 02 — 28 June 2005 Product data sheet
1. Product profile
1.1 General description
PNP/PNP low V
(SC-74) Surface Mounted Device (SMD) plastic package.
NPN complement: PBSS4160DS.
1.2 Features
■ Low collector-emitter saturation voltage V
■ High collector current capability: IC and I
■ High collector current gain (hFE) at high I
■ High efficiency due to less heat generation
■ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
(BISS) transistor
CEsat
Breakthrough in Small Signal (BISS) transistor pair in a SOT457
CEsat
CEsat
CM
C
1.3 Applications
■ Dual low power switches (e.g. motors, fans)
■ Automotive applications
1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
CEO
I
C
I
CM
R
CEsat
[1] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[2] Pulse test: tp≤ 300µs; δ≤0.02.
collector-emitter voltage open base - - −60 V
collector current (DC)
peak collector current single pulse;
t
≤ 1ms
p
collector-emitter saturation
resistance
IC= −1A;
I
= −100 mA
B
[1]
--−1A
--−2A
[2]
- 250 330 mΩ
Page 2
Philips Semiconductors
PBSS5160DS
2. Pinning information
Table 2: Pinning
Pin Description Simplified outline Symbol
1 emitter TR1
2 base TR1
3 collector TR2
4 emitter TR2
5 base TR2
6 collector TR1
3. Ordering information
Table 3: Ordering information
Type number Package
PBSS5160DS SC-74 plastic surface mounted package; 6 leads SOT457
60 V, 1 A PNP low V
4
56
132
(BISS) transistor
CEsat
6
TR1
1
sym018
5
4
TR2
2
3
Name Description Version
4. Marking
Table 4: Marking codes
Type number Marking code
PBSS5160DS A5
5. Limiting values
Table 5: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per transistor
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
collector-base voltage open emitter - −80 V
collector-emitter
open base - −60 V
voltage
emitter-base voltage open collector - −5V
collector current (DC)
[1]
- −0.77 A
[2]
- −0.9 A
[3]
- −1A
peak collector current single pulse; tp≤ 1ms - −2A
base current (DC) - −300 mA
peak base current single pulse; tp≤ 1ms - −1A
9397 750 15186 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 02 — 28 June 2005 2 of 14
Page 3
Philips Semiconductors
PBSS5160DS
Table 5: Limiting values
60 V, 1 A PNP low V
…continued
(BISS) transistor
CEsat
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
- 290 mW
[2]
- 370 mW
[3]
- 450 mW
Per device
P
tot
T
j
T
amb
T
stg
total power dissipation T
junction temperature - 150 °C
ambient temperature −65 +150 °C
storage temperature −65 +150 °C
amb
≤ 25 °C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[1]
- 420 mW
[2]
- 560 mW
[3]
- 700 mW
0.8
(1)
P
tot
(W)
0.6
(2)
(3)
0.4
0.2
0
0 16012040 80
(1) Ceramic PCB, Al2O3, standard footprint
(2) FR4 PCB, mounting pad for collector 1 cm
(3) FR4 PCB, standard footprint
Fig 1. Power derating curves
006aaa493
T
(°C)
amb
2
9397 750 15186 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 02 — 28 June 2005 3 of 14
Page 4
Philips Semiconductors
PBSS5160DS
6. Thermal characteristics
Table 6: Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
R
th(j-a)
R
th(j-sp)
Per device
R
th(j-a)
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
thermal resistance from
junction to ambient
in free air
in free air
60 V, 1 A PNP low V
[1]
- - 431 K/W
[2]
- - 338 K/W
[3]
- - 278 K/W
- - 105 K/W
[1]
- - 298 K/W
[2]
- - 223 K/W
[3]
- - 179 K/W
(BISS) transistor
CEsat
006aaa494
2
10
tp (s)
Z
th(j-a)
(K/W)
3
10
δ = 1
0.75
0.50
0.20
0.10
0.05
0.02
0.01
0
0.33
−4
10
−3
10
−2
−1
10
1
1010
2
10
10
1
−5
10
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
3
10
9397 750 15186 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 02 — 28 June 2005 4 of 14
Page 5
Philips Semiconductors
PBSS5160DS
3
10
Z
th(j-a)
(K/W)
δ = 1
0.75
0.50
2
10
10
1
−5
10
0.20
0.10
0.05
0.02
0.01
0.33
0
−4
10
10
FR4 PCB, mounting pad for collector 1 cm
60 V, 1 A PNP low V
−3
−2
2
−1
10
1
1010
(BISS) transistor
CEsat
006aaa495
2
10
tp (s)
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
3
10
006aaa496
3
10
Z
th(j-a)
(K/W)
δ = 1
0.75
0.50
2
10
10
1
10
−5
0.20
0.10
0.05
0.02
0.01
0
0.33
−4
10
−3
10
−2
−1
10
1
1010
2
10
tp (s)
Ceramic PCB, Al2O3, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
3
10
9397 750 15186 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 02 — 28 June 2005 5 of 14
Page 6
Philips Semiconductors
PBSS5160DS
7. Characteristics
Table 7: Characteristics
T
amb
Symbol Parameter Conditions Min Typ Max Unit
Per transistor
I
CBO
I
CES
I
EBO
h
FE
V
CEsat
V
BEsat
R
CEsat
V
BEon
t
d
t
r
t
on
t
s
t
f
t
off
f
T
C
c
60 V, 1 A PNP low V
(BISS) transistor
CEsat
=25°C unless otherwise specified.
collector-base cut-off
current
collector-emitter cut-off
VCB= −60 V; IE=0A - - −100 nA
= −60 V; IE=0A;
V
CB
T
= 150 °C
j
--−50 µA
VCE= −60 V; VBE=0V - - −100 nA
current
emitter-base cut-off
VEB= −5 V; IC=0A - - −100 nA
current
DC current gain VCE= −5 V; IC= −1 mA 200 350 -
[1]
150 250 -
[1]
100 160 -
[1]
- −250 −330 mV
[1]
- −0.95 −1.1 V
collector-emitter
saturation voltage
base-emitter saturation
= −5 V; IC= −500 mA
V
CE
= −5 V; IC= −1A
V
CE
IC= −100 mA; IB= −1mA - −110 −165 mV
= −500 mA; IB= −50 mA - −120 −175 mV
I
C
= −1 A; IB= −100 mA
I
C
IC= −1 A; IB= −50 mA
voltage
collector-emitter
IC= −1 A; IB= −100 mA
[1]
- 250 330 mΩ
saturation resistance
base-emitter turn-on
IC= −1 A; VCE= −5V
[1]
- −0.82 −0.9 V
voltage
delay time IC= −0.5 A; I
I
=25mA
rise time - 30 - ns
Boff
= −25 mA;
Bon
-11- ns
turn-on time - 41 - ns
storage time - 205 - ns
fall time - 55 - ns
turn-off time - 260 - ns
transition frequency VCE= −10 V; IC= −50 mA;
150 185 - MHz
f = 100 MHz
collector capacitance VCB= −10 V; IE=ie=0A;
- 9 15 pF
f=1MHz
[1] Pulse test: tp≤ 300 µs; δ≤0.02.
9397 750 15186 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 02 — 28 June 2005 6 of 14
Page 7
Philips Semiconductors
PBSS5160DS
600
h
FE
400
200
0
−1
−10
(1)
(2)
(3)
−1 −10
−10
006aaa474
−10
3
I
C
(mA)
−10
2
VCE= −5V
(1) T
(2) T
(3) T
amb
amb
amb
= 100 °C
=25°C
= −55 °C
Fig 5. DC current gain as a function of collector
current; typical values
60 V, 1 A PNP low V
−1.0
V
BE
(V)
−0.8
−0.6
−0.4
4
−0.2
−10
−1
(1)
(2)
(3)
−1 −10
−10
(BISS) transistor
CEsat
006aaa476
−10
3
I
C
(mA)
−10
2
4
VCE= −5V
(1) T
(2) T
(3) T
amb
amb
amb
= −55 °C
=25°C
= 100 °C
Fig 6. Base-emitter voltage as a function of collector
current; typical values
006aaa489
−10
3
IC (mA)
−10
2
V
CEsat
(mV)
−10
−10
−1
−1
−2
−10
(1)
(2)
(3)
−1
−1 −10
−10
IC/IB=20
(1) T
(2) T
(3) T
amb
amb
amb
= 100 °C
=25°C
= −55 °C
Fig 7. Collector-emitter saturation voltage as a
function of collector current; typical values
−1
V
CEsat
(V)
−1
−10
(1)
(2)
−2
4
−10
−10
−1
T
amb
(3)
−1 −10
−10
=25°C
006aaa490
−10
3
IC (mA)
2
−10
4
(1) IC/IB= 100
(2) IC/IB=50
(3) IC/IB=10
Fig 8. Collector-emitter saturation voltage as a
function of collector current; typical values
9397 750 15186 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 02 — 28 June 2005 7 of 14
Page 8
Philips Semiconductors
PBSS5160DS
006aaa477
(mA)
C
−10
4
−10
3
I
2
V
−1.1
BEsat
(V)
−0.9
−0.7
−0.5
−0.3
−0.1
−10
(1)
(2)
(3)
−1
−1 −10
−10
IC/IB=20
(1) T
(2) T
(3) T
amb
amb
amb
= −55 °C
=25°C
= 100 °C
Fig 9. Base-emitter saturationvoltage as a function of
collector current; typical values
R
10
CEsat
(Ω)
10
10
60 V, 1 A PNP low V
3
2
10
1
−1
−1
−10
−1 −10
−10
(BISS) transistor
CEsat
006aaa491
(1)
(2)
(3)
−10
3
IC (mA)
−10
2
4
IC/IB=20
(1) T
(2) T
(3) T
amb
amb
amb
= 100 °C
=25°C
= −55 °C
Fig 10. Collector-emitter saturation resistance as a
function of collector current; typical values
−2.0
IB (mA) = −35.0
I
C
(A)
−1.6
−1.2
−0.8
−0.4
0.0
0 −5−3−1 −2 −4
T
amb
−31.5
−28.0
−24.5
−21.0
=25°CT
Fig 11. Collector current as a function of
collector-emitter voltage; typical values
006aaa478
−17.5
−14.0
−10.5
−7.0
−3.5
VCE (V)
006aaa492
−10
3
IC (mA)
2
−10
4
R
10
CEsat
(Ω)
10
10
10
−1
3
2
1
−10
−1
−1 −10
=25°C
amb
(1)
(2)
(3)
−10
(1) IC/IB= 100
(2) IC/IB=50
(3) IC/IB=10
Fig 12. Collector-emitter saturation resistance as a
function of collector current; typical values
9397 750 15186 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 02 — 28 June 2005 8 of 14
Page 9
Philips Semiconductors
PBSS5160DS
8. Test information
−
90 %
10 %
−
90 %
60 V, 1 A PNP low V
I
B
−
I
(100 %)
Bon
−
I
Boff
I
C
(BISS) transistor
CEsat
input pulse
(idealized waveform)
output pulse
(idealized waveform)
10 %
t
t
d
r
t
on
Fig 13. BISS transistor switching time definition
V
BB
R
B
R2
R1
= 25 mA; R1 = open; R2 = 100 Ω; RB= 300 Ω; RC=20Ω
IC= −0.5 A; I
oscilloscope
V
= −25 mA; I
Bon
(probe)
450 Ω
I
Boff
Fig 14. Test circuit for switching times
−
IC (100 %)
t
t
s
t
off
V
CC
R
C
V
o
(probe)
oscilloscope
450 Ω
DUT
mgd624
t
f
006aaa266
9397 750 15186 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 02 — 28 June 2005 9 of 14
Page 10
Philips Semiconductors
PBSS5160DS
9. Package outline
Fig 15. Package outline SOT457 (SC-74)
3.0
2.5
1.7
1.3
pin 1 index
132
0.95
60 V, 1 A PNP low V
3.1
2.7
56
1.9
4
0.40
0.25
0.6
0.2
1.1
0.9
0.26
0.10
(BISS) transistor
CEsat
04-11-08Dimensions in mm
10. Packing information
Table 8: Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
Type number Package Description Packing quantity
PBSS5160DS SOT457 4 mm pitch, 8 mm tape and reel; T1
[1] For further information and the availability of packing methods, seeSection 17.
[2] T1: normal taping
[3] T2: reverse taping
4 mm pitch, 8 mm tape and reel; T2
[1]
3000 10000
[2]
-115 -135
[3]
-125 -165
9397 750 15186 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 02 — 28 June 2005 10 of 14
Page 11
Philips Semiconductors
PBSS5160DS
11. Soldering
0.95
2.825
3.30
Dimensions in mm
Fig 16. Reflow soldering footprint
3.45
1.95
1.60
1.70
3.10
3.20
60 V, 1 A PNP low V
0.45 0.55
msc422
(BISS) transistor
CEsat
solder lands
solder resist
occupied area
solder paste
5.30
5.05
1.40
4.30
Dimensions in mm
Fig 17. Wave soldering footprint
0.45
solder lands
solder resist
1.45 4.45
occupied area
solder paste
MSC423
9397 750 15186 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 02 — 28 June 2005 11 of 14
Page 12
Philips Semiconductors
PBSS5160DS
60 V, 1 A PNP low V
(BISS) transistor
CEsat
12. Revision history
Table 9: Revision history
Document ID Release date Data sheet status Change notice Doc. number Supersedes
PBSS5160DS_2 20050628 Product data sheet - 9397 750 15186 PBSS5160DS_1
Modifications:
PBSS5160DS_1 20040716 Objective data sheet - 9397 750 12704 -
• Product status changed
• Table 7: Switching time parameters t
, tr, ton, ts, tf and t
d
added
off
• Figure 13 “BISS transistor switching time definition”: added
• Figure 14 “Test circuit for switching times”: added
• Section 10 “Packing information”: added
• Section 11 “Soldering”: added
• Section 16 “Trademarks”: added
9397 750 15186 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 02 — 28 June 2005 12 of 14
Page 13
Philips Semiconductors
PBSS5160DS
60 V, 1 A PNP low V
(BISS) transistor
CEsat
13. Data sheet status
Level Data sheet status
I Objective data Development This data sheet contains data from the objective specification for product development. Philips
II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published
III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the
[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
[1]
Product status
14. Definitions
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
[2] [3]
Definition
Semiconductors reserves the right to change the specification in any manner without notice.
at a later date. Philips Semiconductors reservesthe right to change the specification withoutnotice, in
order to improve the design and supply the best possible product.
right to make changes at any time in order to improvethe design,manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, andmakesno representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
16. Trademarks
15. Disclaimers
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
Notice — All referenced brands, product names, service names and
trademarks are the property of their respective owners.
17. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: [email protected]
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Product data sheet Rev. 02 — 28 June 2005 13 of 14
Page 14
Philips Semiconductors
PBSS5160DS
18. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
10 Packing information. . . . . . . . . . . . . . . . . . . . . 10
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12
13 Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 13
14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
15 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
16 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
17 Contact information . . . . . . . . . . . . . . . . . . . . 13
60 V, 1 A PNP low V
(BISS) transistor
CEsat
© Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Published in The Netherlands
Date of release: 28 June 2005
Document number: 9397 750 15186
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