Datasheet PBSS5320D Datasheet (Philips)

Page 1
查询PBSS5320D供应商
DISCRETE SEMICONDUCTORS
DATA SH EET
ge
MBD128
PBSS5320D
20 V low V
Product specification 2002 Jun 12
CEsat
PNP transistor
Page 2
Philips Semiconductors Product specification
20 V low V
CEsat
PNP transistor
FEATURES
Low collector-emitter saturation voltage
High current capability
Improved device reliability due to reduced heat
generation
APPLICATIONS
Supply line switching circuits
Battery management applications
DC/DC converter applications
Strobe flash units
Heavydutybatterypoweredequipment(motorandlamp
drivers).
DESCRIPTION
PNP low V
transistor in a SOT457 (SC-74) plastic
CEsat
package.
PBSS5320D
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
I
C
I
CM
R
CEsat
PINNING
PIN DESCRIPTION
1 collector 2 collector 3 base 4 emitter 5 collector 6 collector
collector-emitter voltage 20 V collector current (DC) 3A peak collector current 5A equivalent on-resistance 133 m
MARKING
TYPE NUMBER MARKING CODE
PBSS5320D 52
56
132
Top view
4
MAM466
1, 2, 5, 6
3
4
Fig.1 Simplified outline (SOT457; SC-74) and
symbol.
2002 Jun 12 2
Page 3
Philips Semiconductors Product specification
20 V low V
PNP transistor
CEsat
PBSS5320D
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−20 V collector-emitter voltage open base −−20 V emitter-base voltage open collector −−5V collector current (DC) −−3A peak collector current −−5A base current −−500 mA total power dissipation T
25 °C; note 1 600 mW
amb
T
25 °C; note 2 750 mW
amb
storage temperature 65 +150 °C junction temperature 150 °C operating ambient temperature 65 +150 °C
Notes
1. Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 1 cm2.
2. Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 6 cm2.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient
note 1 208 K/W note 2 160 K/W
Notes
1. Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 1 cm2.
2. Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 6 cm2.
2002 Jun 12 3
Page 4
Philips Semiconductors Product specification
20 V low V
PNP transistor
CEsat
PBSS5320D
CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. MIN. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
R
CEsat
V
BEsat
collector-base cut-off current VCB= 20 V; IE=0 −−−100 nA
V
= 20 V; IE= 0; Tj= 150 °C −−−50 µA
CB
emitter-base cut-off current VEB= 5 V; IC=0 −−−100 nA DC current gain VCE= 2 V; IC= 100 mA 200 −−
V
= 2 V; IC= 500 mA 200 −−
CE
= 2 V; IC= 1000 mA; note 1 200 −−
V
CE
V
= 2 V; IC= 2000 mA; note 1 150 −−
CE
collector-emitter saturation voltage
IC= 500 mA; IB= 5mA −−−130 mV
= 500 mA; IB= 50 mA −−−80 mV
I
C
I
= 1 A; IB= 50 mA −−−160 mV
C
I
= 2 A; IB= 20 mA; note 1 −−−400 mV
C
= 2 A; IB= 200 mA; note 1 −−−250 mV
I
C
I
= 3 A; IB= 300 mA; note 1 −−−400 mV
C
equivalent on-resistance IC= 3 A; IB= 300 mA; note 1 85 133 m base-emitter saturation
IC= 2 A; IB= 200 mA; note 1 −−−1.2 V
voltage
V
BEon
C
c
F
T
base-emitter turn-on voltage VCE= 2 V; IC= 1 A; note 1 1.2 −−V collector capacitance VCB= 10 V; IE=Ie= 0; f = 1 MHz −−50 pF transition frequency IC= 200 mA; VCE= 10 V;
100 −−MHz
f = 100 MHz
Note
1. Pulse test: t
300 µs; δ≤0.02.
p
2002 Jun 12 4
Page 5
Philips Semiconductors Product specification
20 V low V
PNP transistor
CEsat
PBSS5320D
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads SOT457
D
y
56
4
E
H
E
AB
X
v M
A
pin 1 index
132
e
DIMENSIONS (mm are the original dimensions)
A
mm
1.1
0.9
A
0.013
0.1
b
cD
p
1
0.40
0.26
0.25
0.10
UNIT
b
3.1
2.7
p
E
1.7
1.3
wBM
0 1 2 mm
scale
H
e
E
3.0
0.95
2.5
A
A
1
L
Qywv
p
0.6
0.33
0.2
0.23
detail X
0.2 0.10.2
Q
c
L
p
OUTLINE VERSION
SOT457 SC-74
IEC JEDEC EIAJ
REFERENCES
2002 Jun 12 5
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28 01-05-04
Page 6
Philips Semiconductors Product specification
20 V low V
DATA SHEET STATUS
DATA SHEET STATUS
Objective data Development This data sheet contains data from the objective specification for product
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Product data Production This data sheet contains data from the product specification. Philips
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
PNP transistor
CEsat
PRODUCT
(1)
STATUS
PBSS5320D
(2)
development. Philips Semiconductors reserves the right to change the specification in any manner without notice.
Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product.
Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A.
DEFINITIONS
DEFINITIONS Short-form specification The data in a short-form
specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values definition  Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device attheseor at any other conditionsabovethosegiven in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information  Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make norepresentationorwarrantythatsuch applications will be suitable for the specified use without further testing or modification.
DISCLAIMERS Life support applications These products are not
designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personalinjury. Philips Semiconductorscustomersusingorsellingtheseproducts for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.
Right to make changes  Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for theuseofany of these products, conveys no licence ortitle under any patent, copyright, or mask work right to these products,and makes no representations orwarrantiesthat these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
2002 Jun 12 6
Page 7
Philips Semiconductors Product specification
20 V low V
PNP transistor
CEsat
PBSS5320D
NOTES
2002 Jun 12 7
Page 8
Philips Semiconductors – a w orldwide compan y
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2002 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands 613514/01/pp8 Date of release:2002 Jun 12 Document order number: 9397 750 09759
SCA74
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