PBSS5320D
DISCRETE SEMICONDUCTORS
DATA SHEET
age
MBD128
PBSS5320D
20 V low VCEsat PNP transistor
Product specification |
|
2002 Jun 12 |
|||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Philips Semiconductors |
Product specification |
|
|
20 V low VCEsat PNP transistor |
PBSS5320D |
|
|
|
|
FEATURES
∙Low collector-emitter saturation voltage
∙High current capability
∙Improved device reliability due to reduced heat generation
APPLICATIONS
∙Supply line switching circuits
∙Battery management applications
∙DC/DC converter applications
∙Strobe flash units
∙Heavy duty battery powered equipment (motor and lamp drivers).
DESCRIPTION
PNP low VCEsat transistor in a SOT457 (SC-74) plastic package.
MARKING
TYPE NUMBER |
MARKING CODE |
|
|
PBSS5320D |
52 |
|
|
QUICK REFERENCE DATA
SYMBOL |
|
|
|
PARAMETER |
|
|
|
MAX. |
UNIT |
|
|
|
|
|
|
|
|
||||
VCEO |
|
collector-emitter voltage |
|
|
−20 |
V |
||||
IC |
|
collector current (DC) |
|
|
−3 |
A |
||||
ICM |
|
peak collector current |
|
|
−5 |
A |
||||
RCEsat |
|
equivalent on-resistance |
|
|
133 |
mΩ |
||||
PINNING |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
PIN |
|
|
|
|
DESCRIPTION |
|
||||
|
|
|
|
|
|
|
|
|
|
|
1 |
|
collector |
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
2 |
|
collector |
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
3 |
|
base |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
4 |
|
emitter |
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
5 |
|
collector |
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
6 |
|
collector |
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
6 |
|
5 |
4 |
1, 2, 5, 6 |
|
||||
|
|
|
||||||||
|
|
|
|
|
|
|
||||
|
|
|
|
|
|
|
||||
|
|
|
|
|
|
3 |
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
4 |
|
|||
|
1 |
|
2 |
3 |
|
|
|
|
|
|
Top view |
|
MAM466 |
|
|
|
|
|
|||
Fig.1 |
Simplified outline (SOT457; SC-74) and |
|||||||||
|
symbol. |
|
|
|
|
|
|
|
||
|
|
|
|
|
|
|
|
|
|
|
2002 Jun 12 |
2 |
Philips Semiconductors |
|
|
Product specification |
||
|
|
|
|
|
|
20 V low VCEsat PNP transistor |
|
|
PBSS5320D |
||
|
|
|
|
|
|
LIMITING VALUES |
|
|
|
|
|
In accordance with the Absolute Maximum Rating System (IEC 60134). |
|
|
|
||
|
|
|
|
|
|
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
|
|
|
|
|
|
VCBO |
collector-base voltage |
open emitter |
− |
−20 |
V |
VCEO |
collector-emitter voltage |
open base |
− |
−20 |
V |
VEBO |
emitter-base voltage |
open collector |
− |
−5 |
V |
IC |
collector current (DC) |
|
− |
−3 |
A |
ICM |
peak collector current |
|
− |
−5 |
A |
IB |
base current |
|
− |
−500 |
mA |
Ptot |
total power dissipation |
Tamb ≤ 25 °C; note 1 |
− |
600 |
mW |
|
|
Tamb ≤ 25 °C; note 2 |
− |
750 |
mW |
Tstg |
storage temperature |
|
−65 |
+150 |
°C |
Tj |
junction temperature |
|
− |
150 |
°C |
Tamb |
operating ambient temperature |
|
−65 |
+150 |
°C |
Notes
1.Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 1 cm2.
2.Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 6 cm2.
THERMAL CHARACTERISTICS
SYMBOL |
PARAMETER |
CONDITIONS |
VALUE |
UNIT |
|
|
|
|
|
Rth j-a |
thermal resistance from junction to |
note 1 |
208 |
K/W |
|
ambient |
note 2 |
160 |
K/W |
|
|
|||
|
|
|
|
|
Notes
1.Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 1 cm2.
2.Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 6 cm2.
2002 Jun 12 |
3 |