Philips PBSS5320D Technical data

Philips PBSS5320D Technical data

PBSS5320D

DISCRETE SEMICONDUCTORS

DATA SHEET

age

MBD128

PBSS5320D

20 V low VCEsat PNP transistor

Product specification

 

2002 Jun 12

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Philips Semiconductors

Product specification

 

 

20 V low VCEsat PNP transistor

PBSS5320D

 

 

 

 

FEATURES

Low collector-emitter saturation voltage

High current capability

Improved device reliability due to reduced heat generation

APPLICATIONS

Supply line switching circuits

Battery management applications

DC/DC converter applications

Strobe flash units

Heavy duty battery powered equipment (motor and lamp drivers).

DESCRIPTION

PNP low VCEsat transistor in a SOT457 (SC-74) plastic package.

MARKING

TYPE NUMBER

MARKING CODE

 

 

PBSS5320D

52

 

 

QUICK REFERENCE DATA

SYMBOL

 

 

 

PARAMETER

 

 

 

MAX.

UNIT

 

 

 

 

 

 

 

VCEO

 

collector-emitter voltage

 

 

20

V

IC

 

collector current (DC)

 

 

3

A

ICM

 

peak collector current

 

 

5

A

RCEsat

 

equivalent on-resistance

 

 

133

mΩ

PINNING

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PIN

 

 

 

 

DESCRIPTION

 

 

 

 

 

 

 

 

 

 

 

 

1

 

collector

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2

 

collector

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3

 

base

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

4

 

emitter

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

5

 

collector

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

6

 

collector

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

6

 

5

4

1, 2, 5, 6

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

4

 

 

1

 

2

3

 

 

 

 

 

Top view

 

MAM466

 

 

 

 

 

Fig.1

Simplified outline (SOT457; SC-74) and

 

symbol.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2002 Jun 12

2

Philips Semiconductors

 

 

Product specification

 

 

 

 

 

 

20 V low VCEsat PNP transistor

 

 

PBSS5320D

 

 

 

 

 

 

LIMITING VALUES

 

 

 

 

In accordance with the Absolute Maximum Rating System (IEC 60134).

 

 

 

 

 

 

 

 

 

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

 

 

 

 

 

 

VCBO

collector-base voltage

open emitter

20

V

VCEO

collector-emitter voltage

open base

20

V

VEBO

emitter-base voltage

open collector

5

V

IC

collector current (DC)

 

3

A

ICM

peak collector current

 

5

A

IB

base current

 

500

mA

Ptot

total power dissipation

Tamb 25 °C; note 1

600

mW

 

 

Tamb 25 °C; note 2

750

mW

Tstg

storage temperature

 

65

+150

°C

Tj

junction temperature

 

150

°C

Tamb

operating ambient temperature

 

65

+150

°C

Notes

1.Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 1 cm2.

2.Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 6 cm2.

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

 

 

 

 

 

Rth j-a

thermal resistance from junction to

note 1

208

K/W

 

ambient

note 2

160

K/W

 

 

 

 

 

 

 

Notes

1.Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 1 cm2.

2.Device mounted on a printed-circuit board, single side copper, tinplated, mounting pad for collector 6 cm2.

2002 Jun 12

3

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