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DATA SH EET
ook, halfpage
M3D109
PBSS5250X
50 V, 2 A
PNP low V
Objective specification 2003 Jun 17
CEsat
(BISS) transistor
Philips Semiconductors Objective specification
50 V, 2 A
PNP low V
CEsat
FEATURES
• SOT89 (SC-62) package
• Low collector-emitter saturation voltage V
• High collector current capability: IC and I
• Higher efficiency leading to less heat generation
• Reduced printed-circuit board requirements.
APPLICATIONS
• Power management
– DC/DC converters
– Supply line switching
– Battery charger
– LCD backlighting.
• Peripheral drivers
– Driver in low supply voltage applications (e.g. lamps
and LEDs).
– Inductive load driver (e.g. relays,
buzzers and motors).
(BISS) transistor
CEsat
CM
PBSS5250X
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
I
C
I
CM
R
CEsat
PINNING
PIN DESCRIPTION
handbook, halfpage
collector-emitter voltage −50 V
collector current (DC) −2A
peak collector current −5A
equivalent on-resistance 160 mΩ
1 emitter
2 collector
3 base
2
3
DESCRIPTION
NPN low V
transistor in a SOT89 plastic package.
CEsat
NPN complement: PBSS4250X.
MARKING
TYPE NUMBER MARKING CODE
PBSS5250X *1L
Note
1. * = p : made in Hong Kong
* = t : made in Malaysia
* = W : made in China.
(1)
1
123
Bottom view
MAM297
Fig.1 Simplified outline (SOT89) and symbol.
2003 Jun 17 2
Philips Semiconductors Objective specification
50 V, 2 A
PBSS5250X
PNP low V
CEsat
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
j
T
amb
T
stg
collector-base voltage open emitter −−50 V
collector-emitter voltage open base −−50 V
emitter-base voltage open collector −−5V
continuous collector current (DC) −−2A
peak collector current T
continuous base current (DC) −−0.5 A
total power dissipation T
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
storage temperature −65 +150 °C
Notes
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint.
2. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pad for collector 1 cm
(BISS) transistor
j max
amb
≤ 25 °C
−−5A
note 1 − 550 mW
note 2 − 1W
2
.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient in free air
note 1 225 K/W
note 2 125 K/W
R
th-js
thermal resistance from junction to soldering point 16 K/W
Notes
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint.
2. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pad for collector 1 cm2.
2003 Jun 17 3
Philips Semiconductors Objective specification
50 V, 2 A
PBSS5250X
PNP low V
CEsat
CHARACTERISTICS
Tj=25°C; unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
I
CES
I
EBO
h
V
FE
CEsat
collector cut-off current VCB= −50 V; IE=0 −−100 nA
collector cut-off current VCE= −50 V; VBE=0 −−100 nA
emitter cut-off current VEB= −5 V; IC=0 −−100 nA
DC current gain VCE= −2V
collector-emitter saturation
voltage
R
V
V
f
T
C
CEsat
BEsat
BEon
c
equivalent on-resistance IC= −2 A; IB= −200 mA; note 1 − 160 mΩ
base-emitter saturation voltage IC= −2 A; IB= −100 mA −−1.1 V
base-emitter turn-on voltage VCE= −2 V; IC= −1A −1.1 − V
transition frequency IC= −100 mA; VCE= −5V;
collector capacitance VCB= −10 V; IE=Ie= 0; f = 1 MHz − 35 pF
(BISS) transistor
V
CB
I
I
I
I
IC= −0.5 A; IB= −50 mA −−90 mV
I
= −1 A; IB= −50 mA −−250 mV
C
= −2 A; IB= −100 mA −−380 mV
I
C
I
= −2 A; IB= −200 mA; note 1 −−320 mV
C
f = 100 MHz
= −50 V; IE= 0; Tj= 150 °C −−50 µA
=−0.1 A 200 −
C
= −0.5 A 200 −
C
= −1 A; note 1 200 −
C
= −2 A; note 1 100 −
C
100 − MHz
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
2003 Jun 17 4
Philips Semiconductors Objective specification
50 V, 2 A
PBSS5250X
PNP low V
CEsat
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89
(BISS) transistor
D
b
3
B
A
123
w M
DIMENSIONS (mm are the original dimensions)
UNIT
mm
1.6
1.4
A
b
0.48
0.35
b
2
1
0.53
0.40
b
1.8
1.4
c
3
0.44
0.37
E
L
b
2
b
1
e
1
e
0 2 4 mm
scale
D
E
e
e
1
4.6
2.6
3.0
4.4
2.4
1.5
H
4.25
3.75
H
E
c
L
0.8
w
0.13
E
min.
OUTLINE
VERSION
SOT89 TO-243 SC-62
IEC JEDEC EIAJ
REFERENCES
2003 Jun 17 5
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
Philips Semiconductors Objective specification
50 V, 2 A
PBSS5250X
PNP low V
DATA SHEET STATUS
LEVEL
I Objective data Development This data sheet contains data from the objective specification for product
II Preliminary data Qualification This data sheet contains data from the preliminary specification.
III Product data Production This data sheet contains data from the product specification. Philips
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
3. For datasheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DATA SHEET
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
CEsat
STATUS
(BISS) transistor
(1)
PRODUCT
STATUS
(2)(3)
DEFINITION
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
atthese or atanyother conditions above thosegivenin the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationor warranty that suchapplicationswillbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expectedto result in personal injury.Philips
Semiconductorscustomersusing or selling theseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design
and/or performance. When the productis infull production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
2003 Jun 17 6
Philips Semiconductors Objective specification
50 V, 2 A
PNP low V
CEsat
(BISS) transistor
PBSS5250X
NOTES
2003 Jun 17 7
Philips Semiconductors – a w orldwide compan y
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2003
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands 613514/01/pp8 Date of release:2003Jun 17 Document order number: 9397 750 11624
SCA75
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