Philips PBSS5250X Technical data
查询PBSS5250X供应商
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D109
PBSS5250X
50 V, 2 A
PNP low V
Objective specification 2003 Jun 17
CEsat
(BISS) transistor
Philips Semiconductors Objective specification
50 V, 2 A
PNP low V
CEsat
FEATURES
• SOT89 (SC-62) package
• Low collector-emitter saturation voltage V
• High collector current capability: IC and I
• Higher efficiency leading to less heat generation
• Reduced printed-circuit board requirements.
APPLICATIONS
• Power management
– DC/DC converters
– Supply line switching
– Battery charger
– LCD backlighting.
• Peripheral drivers
– Driver in low supply voltage applications (e.g. lamps
and LEDs).
– Inductive load driver (e.g. relays,
buzzers and motors).
(BISS) transistor
CEsat
CM
PBSS5250X
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
I
C
I
CM
R
CEsat
PINNING
PIN DESCRIPTION
handbook, halfpage
collector-emitter voltage −50 V
collector current (DC) −2A
peak collector current −5A
equivalent on-resistance 160 mΩ
1 emitter
2 collector
3 base
2
3
DESCRIPTION
NPN low V
transistor in a SOT89 plastic package.
CEsat
NPN complement: PBSS4250X.
MARKING
TYPE NUMBER MARKING CODE
PBSS5250X *1L
Note
1. * = p : made in Hong Kong
* = t : made in Malaysia
* = W : made in China.
(1)
1
123
Bottom view
MAM297
Fig.1 Simplified outline (SOT89) and symbol.
2003 Jun 17 2
Philips Semiconductors Objective specification
50 V, 2 A
PBSS5250X
PNP low V
CEsat
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
tot
T
j
T
amb
T
stg
collector-base voltage open emitter −−50 V
collector-emitter voltage open base −−50 V
emitter-base voltage open collector −−5V
continuous collector current (DC) −−2A
peak collector current T
continuous base current (DC) −−0.5 A
total power dissipation T
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
storage temperature −65 +150 °C
Notes
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint.
2. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pad for collector 1 cm
(BISS) transistor
j max
amb
≤ 25 °C
−−5A
note 1 − 550 mW
note 2 − 1W
2
.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient in free air
note 1 225 K/W
note 2 125 K/W
R
th-js
thermal resistance from junction to soldering point 16 K/W
Notes
1. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint.
2. Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pad for collector 1 cm2.
2003 Jun 17 3
Loading...