Philips PBSS5140U Technical data
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M3D102
PBSS5140U
40 V low V
Product specification
Supersedes data of 2001 Mar 27
CEsat
PNP transistor
2001 Jul 20
Philips Semiconductors Product specification
40 V low V
CEsat
PNP transistor
FEATURES
• Low collector-emitter saturation voltage
• High current capability
• Improved device reliability due to reduced heat
generation
• Enhanced performance over SOT23 1A standard
packaged transistor.
APPLICATIONS
• General purpose switching and muting
• LCD back lighting
• Supply line switching circuits
• Battery driven equipment (mobile phones, video
cameras and hand-held devices).
DESCRIPTION
PNP low V
transistor in a SOT323 (SC-70) plastic
CEsat
package.
MARKING
TYPE NUMBER MARKING CODE
PBSS5140U 51t
PBSS5140U
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
I
CM
R
CEsat
PINNING
PIN DESCRIPTION
handbook, halfpage
Fig.1 Simplified outline (SOT323; SC-70) and
collector-emitter voltage −40 V
peak collector current −2A
equivalent on-resistance <500 mΩ
1 base
2 emitter
3 collector
3
1
1
Top view
2
MAM048
symbol.
3
2
2001 Jul 20 2
Philips Semiconductors Product specification
40 V low V
PNP transistor
CEsat
PBSS5140U
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter −−40 V
collector-emitter voltage open base −−40 V
emitter-base voltage open collector −−5V
collector current (DC) −−1A
peak collector current −−2A
peak base current −−1A
total power dissipation T
≤ 25 °C; note 1 − 250 mW
amb
T
≤ 25 °C; note 2 − 350 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Notes
1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint.
2. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm2.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to
ambient
in free air; note 1 500 K/W
in free air; note 2 357 K/W
Notes
1. Device mounted on a printed-circuit board, single sided copper, tinplated and standard footprint.
2. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm2.
2001 Jul 20 3
Philips Semiconductors Product specification
40 V low V
PNP transistor
CEsat
PBSS5140U
CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
R
CEsat
V
BEsat
V
BEon
f
T
collector-base cut-off current VCB= −40 V; IC=0 −−−100 nA
V
= −40 V; IC= 0; T
CB
= 150 °C −−−50 µA
amb
collector-emitter cut-off current VCE= −30 V; IB=0 −−−100 nA
emitter-base cut-off current VEB= −5 V; IC=0 −−−100 nA
DC current gain VCE= −5 V; IC= −1 mA 300 −−
= −5 V; IC= −100 mA 300 − 800
V
CE
V
= −5 V; IC= −500 mA 250 −−
CE
V
= −5 V; IC= −1 A 160 −−
CE
saturation voltage IC= −100 mA; IB= −1mA −−−200 mV
I
= −500 mA; IB= −50 mA −−−250 mV
C
I
= −1 A; IB= −100 mA −−−500 mV
C
equivalent on-resistance IC= −500 mA; IB= −50 mA; note 1 − 300 <500 mΩ
base-emitter saturation voltage IC= −1 A; IB= −50 mA −−−1.1 V
base-emitter turn-on voltage VCE= −5 V; IC= −1A −−−1V
transition frequency IC= −50 mA; VCE= −10 V;
150 −−MHz
f = 100 MHz
C
c
collector capacitance VCB= −10 V; IE=Ie= 0; f = 1 MHz −−12 pF
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
2001 Jul 20 4
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