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M3D109
PBSS4480X
80 V, 4 A
NPN low V
Product specification
Supersedes data of 2004 Aug 5
CEsat
(BISS) transistor
2004 Oct 25
Philips Semiconductors Product specification
80 V, 4 A
NPN low V
CEsat
FEATURES
• High hFE and low V
• High collector current capability: IC maximum 4 A
• High efficiency leading to less heat generation.
APPLICATIONS
• Medium power peripheral drivers; e.g. fan, motor
• Strobe flash units for DSC and mobile phones
• Inverter applications; e.g. TFT displays
• Power switch for LAN and ADSL systems
• Medium power DC-to-DC conversion
• Battery chargers.
DESCRIPTION
NPN low V
transistor in a SOT89 (SC-62) plastic
CEsat
package.
PNP complement: PBSS5480X.
MARKING
TYPE NUMBER MARKING CODE
PBSS4480X *1Y
Note
1. * = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
(BISS) transistor
at high current operation
CEsat
(1)
PBSS4480X
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
I
C
I
CM
R
CEsat
PINNING
PIN DESCRIPTION
1 emitter
2 collector
3 base
collector-emitter voltage 80 V
collector current (DC) 4 A
peak collector current 10 A
equivalent
54 mΩ
on-resistance
2
3
1
321
sym042
Fig.1 Simplified outline (SOT89) and symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME DESCRIPTION VERSION
PBSS4480X − plastic surface mounted package; collector pad for good heat
transfer; 3 leads
2004 Oct 25 2
SOT89
Philips Semiconductors Product specification
80 V, 4 A
PBSS4480X
NPN low V
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
C
I
CRM
I
CM
I
B
I
BM
P
T
T
T
CBO
CEO
EBO
tot
j
amb
stg
collector-base voltage open emitter − 80 V
collector-emitter voltage open base − 80 V
emitter-base voltage open collector − 5V
collector current (DC) note 4 − 4A
repetitive peak collector current tp≤ 10 ms; δ≤0.1 − 6A
peak collector current t = 1 ms or limited by T
base current (DC) − 1A
peak base current t ≤ 300 µs − 2A
total power dissipation T
junction temperature − 150 °C
ambient temperature −65 +150 °C
storage temperature −65 +150 °C
(BISS) transistor
CEsat
− 10 A
j(max)
≤ 25 °C
amb
notes 1 and 2 − 2.5 W
note 2 − 550 mW
note 3 − 1W
note 4 − 1.4 W
note 5 − 1.6 W
Notes
1. Operated under pulsed conditions; pulse width tp≤ 10 ms; duty cycle δ≤0.2.
2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint.
3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm2.
4. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm2.
5. Device mounted on a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper and tin-plated. For other
mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”
.
2004 Oct 25 3
Philips Semiconductors Product specification
80 V, 4 A
NPN low V
1600
P
tot
(mW)
1200
800
400
(1) FR4 PCB; 6 cm2 mounting pad for collector.
(2) FR4 PCB; 1 cm2 mounting pad for collector.
(3) FR4; standard footprint.
(1)
(2)
(3)
0
−50 20015050 1000
(BISS) transistor
CEsat
001aaa229
T
(°C)
amb
PBSS4480X
Fig.2 Power derating curves.
2004 Oct 25 4
Philips Semiconductors Product specification
80 V, 4 A
PBSS4480X
NPN low V
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th(j-a)
R
th(j-s)
Notes
1. Operated under pulsed conditions; pulse width tp≤ 10 ms; duty cycle δ≤0.2.
2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint.
3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm2.
4. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm2.
5. Device mounted on a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper and tin-plated. For other
mounting conditions, see
thermal resistancefrom junction
to ambient
thermal resistance from junction
to soldering point
(BISS) transistor
CEsat
“Thermal considerations for SOT89 in the General Part of associated Handbook”
in free air
notes 1 and 2 50 K/W
note 2 225 K/W
note 3 125 K/W
note 4 90 K/W
note 5 80 K/W
16 K/W
.
3
10
Z
th
(K/W)
2
10
10
1
−1
10
−5
10
Mounted on FR4 printed-circuit board; standard footprint.
(1) δ =1.
(2) δ = 0.75.
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
−4
10
(3) δ = 0.5.
(4) δ = 0.33.
−3
10
(5) δ = 0.2.
(6) δ = 0.1.
Fig.3 Transient thermal impedance as a function of pulse time; typical values.
−2
−1
10
(7) δ = 0.05.
(8) δ = 0.02.
1
(9) δ = 0.01.
(10) δ =0.
006aaa232
1010
2
10
tp (s)
3
10
2004 Oct 25 5
Philips Semiconductors Product specification
80 V, 4 A
NPN low V
3
10
Z
th
(K/W)
Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2.
(1)
2
10
10
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
1
(10)
−1
10
−5
10
(BISS) transistor
CEsat
−4
10
−3
10
−2
PBSS4480X
006aaa233
−1
10
1
1010
2
10
tp (s)
3
10
(1) δ =1.
(2) δ = 0.75.
3
10
Z
th
(K/W)
2
10
10
1
−1
10
−5
10
(1)
(3)
(5)
(6)
(7)
(8)
(9)
(10)
(3) δ = 0.5.
(4) δ = 0.33.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
(9) δ = 0.01.
(10) δ =0.
Fig.4 Transient thermal impedance as a function of pulse time; typical values.
(2)
(4)
−4
10
−3
10
−2
−1
10
1
1010
006aaa234
2
10
tp (s)
3
10
Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm2.
(1) δ =1.
(2) δ = 0.75.
(3) δ = 0.5.
(4) δ = 0.33.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
Fig.5 Transient thermal impedance as a function of pulse time; typical values.
2004 Oct 25 6
(9) δ = 0.01.
(10) δ =0.
Philips Semiconductors Product specification
80 V, 4 A
PBSS4480X
NPN low V
CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
CES
I
EBO
h
V
R
V
V
f
T
C
FE
CEsat
CEsat
BEsat
BEon
c
collector-base cut-off current VCB= 80 V; IE=0A −−100 nA
collector-emitter cut-off current VCE= 80 V; VBE=0V −−100 nA
emitter-base cut-off current VEB=5V; IC=0A −−100 nA
DC current gain VCE=2V; IC= 0.5 A 250 400 −−
collector-emitter saturation
voltage
equivalent on-resistance IC= 5 A; IB= 500 mA;
base-emitter saturation voltage IC= 0.5 A; IB=50mA − 0.78 0.85 V
base-emitter turn-on voltage IC= 2 A; VCE=2V − 0.78 0.85 V
transition frequency IC= 100 mA; VCE=10V;
collector capacitance IE=ie= 0 A; VCB=10V;
(BISS) transistor
CEsat
= 80 V; IE=0A;
V
CB
T
= 150 °C
j
−−50 µA
VCE= 2 V; IC= 1 A; note 1 250 400 −−
VCE= 2 V; IC= 2 A; note 1 175 270 −−
VCE=2V; IC= 4 A; note 1 80 140 −−
IC= 0.5 A; IB=50mA − 25 40 mV
IC= 1 A; IB=50mA − 55 80 mV
IC= 2 A; IB=40mA − 110 160 mV
IC= 4 A; IB= 200 mA;
− 170 230 mV
note 1
IC= 5 A; IB= 500 mA;
− 200 270 mV
note 1
− 40 54 mΩ
note 1
IC= 1 A; IB=50mA − 0.79 0.9 V
IC= 1 A; IB= 100 mA;
− 0.82 0.95 V
note 1
IC= 4 A; IB= 400 mA;
− 0.95 1.05 V
note 1
120 150 − MHz
f = 100 MHz
− 35 50 pF
f=1MHz
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
2004 Oct 25 7
Philips Semiconductors Product specification
80 V, 4 A
NPN low V
1000
h
FE
800
600
400
200
0
−1
10
VCE=2V.
(1) T
amb
(2) T
amb
(3) T
amb
110
= 100 °C.
=25°C.
= −55 °C.
(BISS) transistor
CEsat
(1)
(2)
(3)
10
2
001aaa734
3
10
I
C
(mA)
PBSS4480X
1.2
V
BE
(V)
0.8
0.4
4
10
0
-1
10
110
(1)
(2)
(3)
10
2
VCE=2V.
(1) T
(2) T
(3) T
amb
amb
amb
= −55 °C.
=25°C.
= 100 °C.
001aab057
3
10
I
(mA)
C
4
10
Fig.6 DC current gain as a function of collector
current; typical values.
3
10
V
CEsat
(mV)
2
10
10
1
−1
10
(1) IC/IB= 100.
(2) IC/IB= 50.
(3) IC/IB= 10.
(1)
(2)
(3)
110
10
2
001aaa737
3
10
I
C
(mA)
4
10
Fig.7 Base-emitter voltage as a function of
collector current; typical values.
1
V
CEsat
(V)
-1
10
-2
10
-3
10
IC/IB= 20.
(1) T
amb
(2) T
amb
(3) T
amb
-1
10
= 100 °C.
=25°C.
= −55 °C.
110
10
001aaab059
(1)
(2)
(3)
10
3
IC (mA)
2
4
10
Fig.8 Collector-emitter saturation voltage as a
function of collector current; typical values.
2004 Oct 25 8
Fig.9 Collector-emitter saturation voltage as a
function of collector current; typical values.
Philips Semiconductors Product specification
80 V, 4 A
NPN low V
1.2
V
BEsat
(V)
0.8
0.4
0
−1
10
IC/IB= 20.
(1) T
amb
(2) T
amb
(3) T
amb
110
= −55 °C.
=25°C.
= 100 °C.
(BISS) transistor
CEsat
(1)
(2)
(3)
10
2
001aaa736
3
10
I
C
(mA)
PBSS4480X
3
10
R
CEsat
(Ω)
2
10
10
1
−1
10
(2)
−2
10
4
10
−1
10
110
10
2
IC/IB= 20.
(1) T
(2) T
(3) T
amb
amb
amb
= 100 °C.
=25°C.
= −55 °C.
001aaa738
(1)
(3)
3
10
IC (mA)
4
10
Fig.10 Base-emitter saturation voltage as a
function of collector current; typical values.
10
I
C
(A)
8
6
4
2
0
021.60.8 1.20.4
(1) IB= 190 mA.
(2) IB= 171 mA.
(3) IB= 152 mA.
(4) IB= 133 mA.
(1)
(2)(3)(4)
(5)
(6)
(7)
(8)
(9)
(10)
(5) IB= 114 mA.
(6) IB= 95 mA.
(7) IB= 76 mA.
(8) IB= 57 mA.
001aaa733
VCE (V)
(9) IB= 38 mA.
(10) IB= 19 mA.
Fig.11 Equivalent on-resistance as a function of
collector current; typical values.
001aab321
3
10
I
(mA)
C
4
10
V
T
BEon
(V)
amb
1.2
0.8
0.4
0
10
=25°C.
−1
110
10
2
Fig.12 Collector current as a function of
collector-emitter voltage; typical values.
2004 Oct 25 9
Fig.13 Base-emitter turn-on voltage as a function
of collector current; typical values.
Philips Semiconductors Product specification
80 V, 4 A
NPN low V
Reference mounting conditions
40
mm
2.5 mm
2.5 mm
0.5 mm
3.96 mm
(BISS) transistor
CEsat
32 mm
1 mm
3 mm
1 mm
1.6 mm
001aaa234
5 mm
handbook, halfpage
40 mm
2.5 mm
0.5 mm
3.96 mm
PBSS4480X
32 mm
10 mm
10 mm
1 mm
5 mm
1.6 mm
MLE322
Fig.14 FR4, standard footprint.
32 mm
30 mm
40
mm
2.5 mm
0.5 mm
3.96 mm
1 mm
001aaa235
Fig.15 FR4, mounting pad for collector 1 cm2.
20
mm
5 mm
1.6 mm
Fig.16 FR4, mounting pad for collector 6 cm2.
2004 Oct 25 10
Philips Semiconductors Product specification
80 V, 4 A
PBSS4480X
NPN low V
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89
(BISS) transistor
CEsat
D
b
p3
B
A
123
w M
DIMENSIONS (mm are the original dimensions)
UNIT
mm
1.6
1.4
A
b
p1
0.48
0.35
b
p2
0.53
0.40
b
1.8
1.4
p3
c
0.44
0.23
L
b
p2
b
p1
e
1
e
0 2 4 mm
scale
D
E
e
e
1
4.6
2.6
3.0
4.4
2.4
1.5
E
p
H
4.25
3.75
H
E
c
L
1.2
0.8
w
p
0.13
E
OUTLINE
VERSION
SOT89 TO-243 SC-62
IEC JEDEC JEITA
REFERENCES
2004 Oct 25 11
EUROPEAN
PROJECTION
ISSUE DATE
99-09-13
04-08-03
Philips Semiconductors Product specification
80 V, 4 A
PBSS4480X
NPN low V
DATA SHEET STATUS
LEVEL
I Objective data Development This data sheet contains data from the objective specification for product
II Preliminary data Qualification This data sheet contains data from the preliminary specification.
III Product data Production This data sheet contains data from the product specification. Philips
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
3. For data sheets describing multiple type numbers, the highest-level product status determines thedata sheet status.
DATA SHEET
STATUS
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
(BISS) transistor
CEsat
(1)
PRODUCT
STATUS
(2)(3)
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
DEFINITION
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseor at any other conditions above those given inthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuchapplicationswillbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected toresult in personal injury.Philips
Semiconductorscustomersusingorsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no license or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
2004 Oct 25 12
Philips Semiconductors – a w orldwide compan y
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands R75/02/pp13 Date of release: 2004 Oct 25 Document order number: 9397 750 13924
SCA76
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