PBSS4480X
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M3D109
PBSS4480X
80 V, 4 A
NPN low V
Product specification
Supersedes data of 2004 Aug 5
CEsat
(BISS) transistor
2004 Oct 25
Philips Semiconductors Product specification
80 V, 4 A
NPN low V
CEsat
FEATURES
• High hFE and low V
• High collector current capability: IC maximum 4 A
• High efficiency leading to less heat generation.
APPLICATIONS
• Medium power peripheral drivers; e.g. fan, motor
• Strobe flash units for DSC and mobile phones
• Inverter applications; e.g. TFT displays
• Power switch for LAN and ADSL systems
• Medium power DC-to-DC conversion
• Battery chargers.
DESCRIPTION
NPN low V
transistor in a SOT89 (SC-62) plastic
CEsat
package.
PNP complement: PBSS5480X.
MARKING
TYPE NUMBER MARKING CODE
PBSS4480X *1Y
Note
1. * = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
(BISS) transistor
at high current operation
CEsat
(1)
PBSS4480X
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
I
C
I
CM
R
CEsat
PINNING
PIN DESCRIPTION
1 emitter
2 collector
3 base
collector-emitter voltage 80 V
collector current (DC) 4 A
peak collector current 10 A
equivalent
54 mΩ
on-resistance
2
3
1
321
sym042
Fig.1 Simplified outline (SOT89) and symbol.
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME DESCRIPTION VERSION
PBSS4480X − plastic surface mounted package; collector pad for good heat
transfer; 3 leads
2004 Oct 25 2
SOT89
Philips Semiconductors Product specification
80 V, 4 A
PBSS4480X
NPN low V
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
C
I
CRM
I
CM
I
B
I
BM
P
T
T
T
CBO
CEO
EBO
tot
j
amb
stg
collector-base voltage open emitter − 80 V
collector-emitter voltage open base − 80 V
emitter-base voltage open collector − 5V
collector current (DC) note 4 − 4A
repetitive peak collector current tp≤ 10 ms; δ≤0.1 − 6A
peak collector current t = 1 ms or limited by T
base current (DC) − 1A
peak base current t ≤ 300 µs − 2A
total power dissipation T
junction temperature − 150 °C
ambient temperature −65 +150 °C
storage temperature −65 +150 °C
(BISS) transistor
CEsat
− 10 A
j(max)
≤ 25 °C
amb
notes 1 and 2 − 2.5 W
note 2 − 550 mW
note 3 − 1W
note 4 − 1.4 W
note 5 − 1.6 W
Notes
1. Operated under pulsed conditions; pulse width tp≤ 10 ms; duty cycle δ≤0.2.
2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint.
3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm2.
4. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm2.
5. Device mounted on a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper and tin-plated. For other
mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”
.
2004 Oct 25 3
Philips Semiconductors Product specification
80 V, 4 A
NPN low V
1600
P
tot
(mW)
1200
800
400
(1) FR4 PCB; 6 cm2 mounting pad for collector.
(2) FR4 PCB; 1 cm2 mounting pad for collector.
(3) FR4; standard footprint.
(1)
(2)
(3)
0
−50 20015050 1000
(BISS) transistor
CEsat
001aaa229
T
(°C)
amb
PBSS4480X
Fig.2 Power derating curves.
2004 Oct 25 4
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