Philips PBSS4350T Technical data
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ook, halfpage
M3D088
PBSS4350T
50 V low V
Product specification 2002 Aug 08
CEsat
NPN transistor
Philips Semiconductors Product specification
50 V low V
CEsat
NPN transistor
FEATURES
• Low collector-emitter saturation voltage V
corresponding low R
CEsat
CEsat
and
• High collector current capability
• High collector current gain
• Improved efficiency due to reduced heat generation.
APPLICATIONS
• Power management applications
• Low and medium power DC/DC convertors
• Supply line switching
• Battery chargers
• Linear voltage regulation with low voltage drop-out
(LDO).
DESCRIPTION
NPN low V
transistor in a SOT23 plastic package.
CEsat
PNP complement: PBSS5350T.
PBSS4350T
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
I
C
I
CRP
R
CEsat
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
collector-emitter voltage 50 V
collector current (DC) 2 A
repetitive peak collector
3A
current
equivalent on-resistance 130 mΩ
3
3
MARKING
TYPE NUMBER MARKING CODE
PBSS4350T ZC∗
Note
1. ∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
∗ = w: Made in China.
(1)
1
2
Top view
21
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
2002 Aug 08 2
Philips Semiconductors Product specification
50 V low V
NPN transistor
CEsat
PBSS4350T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CRP
I
CM
I
B
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 50 V
collector-emitter voltage open base − 50 V
emitter-base voltage open collector − 5V
collector current (DC) − 2A
repetitive peak collector current note 1 − 3A
peak collector current single peak − 5A
base current (DC) − 0.5 A
total power dissipation T
≤ 25 °C; note 2 − 300 mW
amb
≤ 25 °C; note 3 − 480 mW
T
amb
T
≤ 25 °C; note 4 − 540 mW
amb
T
≤ 25 °C; notes 1 and 2 − 1.2 W
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Notes
1. Operated under pulsed conditions: pulse width t
≤ 100 ms; duty cycle δ≤0.25.
p
2. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
3. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.
4. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to
ambient
in free air; note 1 417 K/W
in free air; note 2 260 K/W
in free air; note 3 230 K/W
in free air; notes 1 and 4 104 K/W
Notes
1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.
3. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2.
4. Operated under pulsed conditions: pulse width tp≤ 100 ms; duty cycle δ≤0.25.
2002 Aug 08 3
Philips Semiconductors Product specification
50 V low V
NPN transistor
CEsat
PBSS4350T
CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
R
CEsat
V
BEsat
V
BEon
f
T
collector-base cut-off current VCB= 50 V; IE=0 −−100 nA
V
= 50 V; IE= 0; Tj= 150 °C −−50 µA
CB
emitter-base cut-off current VEB=5V; IC=0 −−100 nA
DC current gain VCE=2V; IC= 100 mA 300 −−
V
=2V; IC= 500 mA 300 −−
CE
=2V; IC= 1 A; note 1 300 −−
V
CE
V
=2V; IC= 2 A; note 1 200 −−
CE
V
=2V; IC= 3 A; note 1 100 −−
CE
collector-emitter saturation
voltage
IC= 500 mA; IB=50mA −−80 mV
I
= 1 A; IB=50mA −−160 mV
C
I
= 2 A; IB= 100 mA; note 1 −−280 mV
C
= 2 A; IB= 200 mA; note 1 −−260 mV
I
C
I
= 3 A; IB= 300 mA; note 1 −−370 mV
C
equivalent on-resistance IC= 2 A; IB= 200 mA; note 1 − 100 130 mΩ
base-emitter saturation
voltage
IC= 2 A; IB= 100 mA; note 1 −−1.1 V
I
= 3 A; IB= 300 mA; note 1 −−1.2 V
C
base-emitter turn-on voltage VCE=2V; IC= 1 A; note 1 1.2 −−V
transition frequency IC= 100 mA; VCE=5V;
100 −−MHz
f = 100 MHz
C
c
collector capacitance VCB= 10 V; IE=Ie= 0; f = 1 MHz −−25 pF
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
2002 Aug 08 4
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