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M3D088
PBSS4320T
20 V low V
Product specification 2002 Aug 08
CEsat
NPN transistor
Philips Semiconductors Product specification
20 V low V
CEsat
NPN transistor
FEATURES
• Low collector-emitter saturation voltage V
corresponding low R
CEsat
CEsat
and
• High collector current capability
• High collector current gain
• Improved efficiency due to reduced heat generation.
APPLICATIONS
• Power management applications
• Low and medium power DC/DC convertors
• Supply line switching
• Battery chargers
• Linear voltage regulation with low voltage drop-out
(LDO).
DESCRIPTION
NPN low V
transistor in a SOT23 plastic package.
CEsat
PNP complement: PBSS5320T.
PBSS4320T
QUICK REFERENCE DATA
SYMBOL PARAMETER MAX. UNIT
V
CEO
I
C
I
CRP
R
CEsat
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
handbook, halfpage
collector-emitter voltage 20 V
collector current (DC) 2 A
repetitive peak collector
3A
current
equivalent on-resistance 105 mΩ
3
3
MARKING
TYPE NUMBER MARKING CODE
PBSS4320T ZG∗
Note
1. ∗ = p: Made in Hong Kong.
∗ = t: Made in Malaysia.
∗ = w: Made in China.
(1)
1
2
Top view
21
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
2002 Aug 08 2
Philips Semiconductors Product specification
20 V low V
NPN transistor
CEsat
PBSS4320T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CRP
I
CM
I
B
P
tot
T
stg
T
j
T
amb
collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 20 V
emitter-base voltage open collector − 5V
collector current (DC) − 2A
repetitive peak collector current note 1 − 3A
peak collector current single peak − 5A
base current (DC) − 0.5 A
total power dissipation T
≤ 25 °C; note 2 − 300 mW
amb
≤ 25 °C; note 3 − 480 mW
T
amb
T
≤ 25 °C; note 4 − 540 mW
amb
T
≤ 25 °C; notes 1 and 2 − 1.2 W
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Notes
1. Operated under pulsed conditions: pulse width t
≤ 100 ms; duty cycle δ≤0.25.
p
2. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
3. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.
4. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to
ambient
in free air; note 1 417 K/W
in free air; note 2 260 K/W
in free air; note 3 230 K/W
in free air; notes 1 and 4 104 K/W
Notes
1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.
3. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2.
4. Operated under pulsed conditions: pulse width tp≤ 100 ms; duty cycle δ≤0.25.
2002 Aug 08 3
Philips Semiconductors Product specification
20 V low V
NPN transistor
CEsat
PBSS4320T
CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
R
CEsat
V
BEsat
V
BEon
f
T
collector-base cut-off current VCB= 20 V; IE=0 −−100 nA
V
= 20 V; IE= 0; Tj= 150 °C −−50 µA
CB
emitter-base cut-off current VEB=5V; IC=0 −−100 nA
DC current gain VCE=2V; IC= 100 mA 220 −−
V
=2V; IC= 500 mA 220 −−
CE
=2V; IC= 1 A; note 1 220 −−
V
CE
V
=2V; IC= 2 A; note 1 200 −−
CE
V
=2V; IC= 3 A; note 1 150 −−
CE
collector-emitter saturation
voltage
IC= 500 mA; IB=50mA −−70 mV
I
= 1 A; IB=50mA −−120 mV
C
I
= 2 A; IB= 40 mA; note 1 −−230 mV
C
= 2 A; IB= 200 mA; note 1 −−210 mV
I
C
I
= 3 A; IB= 300 mA; note 1 −−310 mV
C
equivalent on-resistance IC= 2 A; IB= 200 mA; note 1 − 80 105 mΩ
base-emitter saturation
voltage
IC= 2 A; IB= 40 mA; note 1 −−1.1 V
I
= 3 A; IB= 300 mA; note 1 −−1.2 V
C
base-emitter turn-on voltage VCE=2V; IC= 1 A; note 1 1.2 −−V
transition frequency IC= 100 mA; VCE=5V;
100 −−MHz
f = 100 MHz
C
c
collector capacitance VCB= 10 V; IE=Ie= 0; f = 1 MHz −−35 pF
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
2002 Aug 08 4
Philips Semiconductors Product specification
20 V low V
800
handbook, halfpage
h
FE
600
400
200
0
−1
10
VCE=2V.
(1) T
(2) T
(3) T
amb
amb
amb
= 150°C.
=25°C.
= −55 °C.
NPN transistor
CEsat
110
PBSS4320T
MLD849
1200
handbook, halfpage
V
BE
(mV)
(1)
(1)
(2)
800
(2)
(3)
400
(3)
0
2
10
3
10
I
C
(mA)
4
10
−1
10
110
2
10
VCE=2V.
(1) T
(2) T
(3) T
amb
amb
amb
= −55 °C.
=25°C.
= 150 °C.
3
10
I
C
MLD850
(mA)
4
10
Fig.2 DC current gain as a function of collector
current; typical values.
3
10
I
C
MLD851
(mA)
1400
handbook, halfpage
V
BEsat
(mV)
1000
600
200
−1
10
IC/IB= 10.
(1) T
(2) T
(3) T
amb
amb
amb
= −55 °C.
=25°C.
= 150 °C.
110
(1)
(2)
(3)
2
10
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
3
10
I
C
MLD852
(mA)
4
10
1400
handbook, halfpage
V
BEsat
(mV)
1000
(1)
(2)
600
4
10
200
−1
10
110
(3)
2
10
IC/IB= 20.
(1) T
(2) T
(3) T
amb
amb
amb
= −55 °C.
=25°C.
= 150 °C.
Fig.4 Base-emitter saturation voltage as a
function of collector current; typical values.
2002 Aug 08 5
Fig.5 Base-emitter saturation voltage as a
function of collector current; typical values.
Philips Semiconductors Product specification
20 V low V
3
10
handbook, halfpage
V
CEsat
(mV)
2
10
10
1
−1
10
IC/IB= 10.
(1) T
(2) T
(3) T
amb
amb
amb
= 150 °C.
=25°C.
= −55 °C.
NPN transistor
CEsat
110
PBSS4320T
MLD853
handbook, halfpage
V
CEsat
3
10
(mV)
2
10
(1)
(3)
2
10
(2)
3
10
I
10
(mA)
C
10
4
1
−1
10
110
2
10
IC/IB= 20.
(1) T
(2) T
(3) T
amb
amb
amb
= 150 °C.
=25°C.
= −55 °C.
(1)
(3)
3
10
I
C
MLD854
(2)
(mA)
4
10
Fig.6 Collector-emitter saturation voltage as a
function of collector current; typical values.
3
10
I
C
MLD855
(mA)
3
10
handbook, halfpage
V
CEsat
(mV)
2
10
10
1
−1
10
IC/IB= 50.
(1) T
(2) T
(3) T
amb
amb
amb
= 150 °C.
=25°C.
= −55 °C.
(1)
(3)
110
(2)
2
10
Fig.7 Collector-emitter saturation voltage as a
function of collector current; typical values.
(2)
3
10
I
C
MLD856
(mA)
4
10
3
10
handbook, halfpage
V
CEsat
(mV)
2
10
(1)
(3)
10
4
10
1
−1
10
110
2
10
IC/IB= 100.
(1) T
(2) T
(3) T
amb
amb
amb
= 150 °C.
=25°C.
= −55 °C.
Fig.8 Collector-emitter saturation voltage as a
function of collector current; typical values.
2002 Aug 08 6
Fig.9 Collector-emitter saturation voltage as a
function of collector current; typical values.
Philips Semiconductors Product specification
20 V low V
2
10
handbook, halfpage
R
CEsat
(Ω)
10
1
−1
10
−2
10
−1
10
IC/IB= 20.
(1) T
(2) T
(3) T
amb
amb
amb
= 150 °C.
=25°C.
= −55 °C.
CEsat
1
NPN transistor
MLD857
10 10
(1)
(3)
2
(2)
10
3
IC (mΑ)
PBSS4320T
4
10
Fig.10 Equivalent on-resistance as a function of
collector current; typical values.
2002 Aug 08 7
Philips Semiconductors Product specification
20 V low V
NPN transistor
CEsat
PBSS4320T
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads SOT23
D
3
E
H
E
AB
X
v M
A
12
e
1
DIMENSIONS (mm are the original dimensions)
A
1
0.1
b
p
0.48
0.15
0.38
0.09
IEC JEDEC EIAJ
UNIT
A
max.
1.1
mm
0.9
OUTLINE
VERSION
SOT23 TO-236AB
b
p
e
cD
3.0
2.8
w M
B
0 1 2 mm
scale
e
0.95
H
1
2.5
2.1
e
E
1.4
1.9
1.2
REFERENCES
Q
A
A
1
c
L
p
detail X
L
Qwv
p
E
0.55
0.45
0.15
0.45
0.2
0.1
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
2002 Aug 08 8
Philips Semiconductors Product specification
20 V low V
DATA SHEET STATUS
DATA SHEET STATUS
Objective data Development This data sheet contains data from the objective specification for product
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Product data Production This data sheet contains data from the product specification. Philips
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
NPN transistor
CEsat
PRODUCT
(1)
STATUS
PBSS4320T
(2)
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
DEFINITIONS
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting valuesdefinition Limitingvalues givenare in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
atthese orat anyother conditionsabovethose givenin the
Characteristics sectionsof the specification isnot implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentation orwarrantythat suchapplications willbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably beexpected toresult inpersonal injury.Philips
Semiconductorscustomers usingorselling theseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuse ofany oftheseproducts, conveysno licenceortitle
under any patent, copyright, or mask work right to these
products,and makesno representationsor warrantiesthat
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
2002 Aug 08 9
Philips Semiconductors Product specification
20 V low V
NPN transistor
CEsat
PBSS4320T
NOTES
2002 Aug 08 10
Philips Semiconductors Product specification
20 V low V
NPN transistor
CEsat
PBSS4320T
NOTES
2002 Aug 08 11
Philips Semiconductors – a w orldwide compan y
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2002
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document doesnot formpart of any quotation or contract, isbelieved tobe accurate and reliable and may bechanged
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands 613514/01/pp12 Date of release: 2002 Aug 08 Document order number: 9397 750 09915
SCA74
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