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ook, halfpage
M3D302
PBSS4240DPN
40 V low V
CEsat
NPN/PNP
transistor
Product specification 2003 Feb 20
Philips Semiconductors Product specification
40 V low V
CEsat
NPN/PNP transistor
FEATURES
• Low collector-emitter saturation voltage V
• High collector current capability ICand I
• High collector current gain hFE at high I
CEsat
CM
C
• High efficiency leading to reduced heat generation
• Reduced printed-circuit board area requirements.
APPLICATIONS
• Power management:
– Complementary MOSFET driver
– Dual supply line switching.
• Peripheral driver:
– Half and full bridge motor drivers
– Multi-phase stepper motor driver.
DESCRIPTION
NPN/PNP low V
transistor pair in a SOT457 (SC-74)
CEsat
plastic package.
PBSS4240DPN
QUICK REFERENCE DATA
SYMBOL PARAMETER
V
CEO
I
C
I
CRP
I
CM
R
CEsat
PINNING
PIN DESCRIPTION
1, 4 emitter TR1; TR2
2, 5 base TR1; TR2
6, 3 collector TR1; TR2
emitter-collector
voltage
collector current (DC) 1.35 −1.1 A
repetitive peak
collector current
peak collector current 3 −3A
equivalent
on-resistance
MAX.
UNIT
NPN PNP
40 −40 V
2 −2A
200 260 mΩ
MARKING
TYPE NUMBER MARKING CODE
PBSS4240DPN M3
handbook, halfpage
Top view
654
123
MAM445
645
TR1
132
Fig.1 Simplified outline SOT457 (SC-74) and
symbol.
TR2
2003 Feb 20 2
Philips Semiconductors Product specification
40 V low V
NPN/PNP transistor
CEsat
PBSS4240DPN
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor unless otherwise specified; for the PNP transistor with negative polarity
V
CBO
V
CEO
V
EBO
I
C
collector-base voltage open emitter − 40 V
collector-emitter voltage open base − 40 V
emitter-base voltage open collector − 5V
collector current (DC) −
NPN − 1.35 A
PNP −−1.1 A
I
CRP
I
CM
I
B
I
BM
P
tot
T
stg
T
j
T
amb
repetitive peak collector current note 1 − 2A
peak collector current single peak − 3A
base current (DC) − 300 mA
peak base current − 1A
total power dissipation T
≤ 25 °C; note 2 − 370 mW
amb
≤ 25 °C; note 3 − 310 mW
T
amb
T
≤ 25 °C; note 1 − 1.1 W
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Per device
P
tot
total power dissipation T
≤ 25 °C; note 2 − 600 mW
amb
Notes
1. Operated under pulsed conditions: duty cycle δ≤20%; pulsewidthtp ≤ 10 ms; mounting pad for collector standard
footprint.
2. Device mounted on a printed-circuit board; single-sided copper; tinplated; mounting pad for collector 1 cm2.
3. Device mounted on a printed-circuit board; single-sided copper; tinplated; standard footprint.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Per transistor
R
th j-a
thermal resistance from junction to
ambient
in free air; note 1 340 K/W
in free air; note 2 110 K/W
Notes
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
2. Operated under pulsed conditions: pulse width tp≤ 10 ms; duty cycle δ≤0.20; mounting pad for collector standard
footprint.
2003 Feb 20 3
Philips Semiconductors Product specification
40 V low V
NPN/PNP transistor
CEsat
PBSS4240DPN
CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per transistor unless otherwise specified; for the PNP transistor with negative polarity
I
CBO
I
CEO
I
EBO
h
FE
f
T
collector-base cut-off current VCB= 40 V; IE=0 −−100 nA
V
= 40 V; IE= 0; Tj= 150 °C −−50 µA
CB
collector-emitter cut-off current VCE= 30 V; IB=0 −−100 nA
emitter-base cut-off current VEB=5V; IC=0 −−100 nA
DC current gain VCE=5V; IC=1mA 300 −−
transition frequency IC= 50 mA; VCE=10V;
150 −−MHz
f = 100 MHz
C
c
collector capacitance VCB= 10 V; IE=Ie=0;
−−12 pF
f = 1 MHz
TR1 (NPN)
h
FE
V
CEsat
V
BEsat
V
BEon
R
CEsat
DC current gain VCE=5V; IC= 500 mA 300 − 900
V
=5V; IC=1A 200 −−
CE
V
=5V; IC= 2 A; note 1 75 −−
CE
collector-emitter saturation voltage IC= 100 mA; IB=1mA − 60 75 mV
I
= 500 mA; IB=50mA − 80 100 mV
C
I
= 1 A; IB= 100 mA − 150 200 mV
C
I
= 2 A; IB= 200 mA; note 1 − 300 400 mV
C
base-emitter saturation voltage IC= 1 A; IB= 100 mA −−1.2 V
base-emitter turn-on voltage VCE=5V; IC=1A −−1.1 V
equivalent on-resistance IC= 1 A; IB= 100 mA −−200 mΩ
TR2 (PNP)
h
FE
V
CEsat
V
BEsat
V
BEon
R
CEsat
DC current gain VCE= −5 V; IC= −100 mA 300 − 800
V
= −5 V; IC= −500 mA 250 −−
CE
V
= −5 V; IC= −1 A 160 −−
CE
= −5 V; IC= −2 A; note 1 50 −−
V
CE
saturation voltage IC= −100 mA; IB= −1mA −−90 −120 mV
I
= −500 mA; IB= −50 mA −−100 −145 mV
C
I
= −1 A; IB= −100 mA −−180 −260 mV
C
I
= −2 A; IB= −200 mA; note 1 −−400 −530 mV
C
saturation voltage IC= −1 A; IB= −50 mA −−−1.1 V
base-emitter turn-on voltage VCE= −5 V; IC= −1A −−−1V
equivalent on-resistance IC= −1 A; IB= −100 mA; note 1 −−260 mΩ
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
2003 Feb 20 4
Philips Semiconductors Product specification
40 V low V
800
handbook, halfpage
h
FE
600
400
200
0
−1
10
TR1 (NPN); VCE=5V.
(1) T
(2) T
(3) T
amb
amb
amb
= 150 °C.
=25°C.
= −55 °C.
CEsat
1
NPN/PNP transistor
MHC471
(1)
(2)
(3)
10 10
2
10
3
IC (mA)
4
10
1.2
handbook, halfpage
V
BE
(V)
0.8
0.4
0
−1
10
TR1 (NPN); VCE=5V.
(1) T
(2) T
(3) T
amb
amb
amb
= −55 °C.
=25°C.
= 150 °C.
110
PBSS4240DPN
MHC472
(1)
(2)
(3)
2
10
3
10
I
C
(mA)
4
10
Fig.2 DC current gain as a function of collector
current; typical values.
3
10
handbook, halfpage
V
CEsat
(mV)
2
10
10
−1
10
TR1 (NPN); IC/IB= 20.
(1) T
(2) T
(3) T
amb
amb
amb
= 150 °C.
=25°C.
= −55 °C.
(1)
(2)
(3)
11010
2103
MHC473
IC (mA)
Fig.3 Base-emitter voltage as a function of
collector current; typical values.
3
10
I
C
MHC474
(mA)
4
10
1.2
handbook, halfpage
V
BEsat
(V)
1
(1)
0.8
(2)
0.6
(3)
0.4
4
10
0.2
−1
10
110
2
10
TR1 (NPN); IC/IB= 20.
(1) T
(2) T
(3) T
amb
amb
amb
= −55 °C.
=25°C.
= 150 °C.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
2003 Feb 20 5
Fig.5 Base-emitter saturation voltage as a
function of collector current; typical values.
Philips Semiconductors Product specification
40 V low V
handbook, halfpage
2
I
C
(A)
1.6
1.2
0.8
0.4
0
02
TR1 (NPN); T
(1) IB= 30 mA.
(2) IB= 27 mA.
(3) IB= 24 mA.
(4) IB= 21 mA.
amb
0.4
=25°C.
NPN/PNP transistor
CEsat
(1)
(2)
(3)
0.8 1.2 1.6
(5) IB= 18 mA.
(6) IB= 15 mA.
(7) IB= 12 mA.
(8) IB= 9 mA.
Fig.6 Collector current as a function of
collector-emitter voltage; typical values.
MHC475
(4)
(5)
(6)
(7)
(8)
(9)
(10)
VCE (V)
(9) IB= 6 mA.
(10) IB= 3 mA.
PBSS4240DPN
(2)
10
MHC476
3
IC (mA)
3
10
handbook, halfpage
R
CEsat
(Ω)
2
10
10
1
(1)
−1
10
−1
10
TR1 (NPN); IC/IB= 20.
(1) T
amb
(2) T
amb
(3) T
amb
1
= 150 °C.
=25°C.
= −55 °C.
10 10
(3)
2
Fig.7 Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
4
10
2003 Feb 20 6
Philips Semiconductors Product specification
40 V low V
1000
handbook, halfpage
h
FE
800
600
400
200
0
−1
−10
TR2 (PNP); VCE= −5V.
(1) T
(2) T
(3) T
amb
amb
amb
= 150 °C.
=25°C.
= −55 °C.
CEsat
−1 −10
NPN/PNP transistor
MHC464
(1)
(2)
(3)
−10
2
−10
3
IC (mA)
−10
4
−1.2
handbook, halfpage
V
BE
(V)
−0.8
−0.4
0
−1
−10
TR2 (PNP); VCE= −5V.
(1) T
(2) T
(3) T
amb
amb
amb
= −55 °C.
=25°C.
= 150 °C.
−1 −10
PBSS4240DPN
MHC465
(1)
(2)
(3)
−10
2
−10
3
IC (mA)
−10
4
Fig.8 DC current gain as a function of collector
current; typical values.
−10
MHC466
3
IC (mA)
3
−10
handbook, halfpage
V
CEsat
(mV)
2
−10
−10
−1
−1
−10
TR2 (PNP); IC/IB= 20.
(1) T
(2) T
(3) T
amb
amb
amb
= 150 °C.
=25°C.
= −55 °C.
−1 −10
(1)
(2)
(3)
2
−10
−10
Fig.9 Base-emitter voltage as a function of
collector current; typical values.
−10
MHC467
3
IC (mA)
−10
4
−1.2
handbook, halfpage
V
BEsat
(V)
−1
(1)
−0.8
(2)
−0.6
(3)
−0.4
−0.2
4
−10
−1
−1 −10
−10
2
TR2 (PNP); IC/IB= 20.
(1) T
(2) T
(3) T
amb
amb
amb
= −55 °C.
=25°C.
= 150 °C.
Fig.10 Collector-emitter saturation voltage as a
function of collector current; typical values.
2003 Feb 20 7
Fig.11 Base-emitter saturation voltage as a
function of collector current; typical values.
Philips Semiconductors Product specification
40 V low V
−1.2
handbook, halfpage
I
C
(A)
−0.8
−0.4
0
0
TR2 (PNP); T
(1) IB= −7 mA.
(2) IB= −6.3 mA.
(3) IB= −5.6 mA.
(4) IB= −4.9 mA.
NPN/PNP transistor
CEsat
MHC468
(2)(3)
(4)
−0.4 −2
amb
−0.8 −1.2 −1.4
=25°C.
(5) IB= −4.2 mA.
(6) IB= −3.5 mA.
(7) IB= −2.8 mA.
(8) IB= −2.1 mA.
(1)
(5)
(6)
(7)
(8)
(9)
(10)
VCE (V)
(9) IB= −1.4 mA.
(10) IB= −0.7 mA.
−
2.4
handbook, halfpage
I
C
(A)
−
2
−
1.6
−
1.2
−
0.8
−
0.4
0
0
TR2 (PNP); T
(1) IB= −50 mA.
(2) IB= −45 mA.
(3) IB= −40 mA.
(4) IB= −35 mA.
amb
−
0.4
=25°C.
PBSS4240DPN
(1)
(2)
(3)
(4)
(5)
−
(5) IB= −30 mA.
(6) IB= −25 mA.
(7) IB= −20 mA.
(8) IB= −15 mA.
0.8
−
1.2
MHC469
(6)
(7)
(8)
(9)
(10)
−
1.6
(9) IB= −10 mA.
(10) IB= −5 mA.
VCE (V)
−
2
Fig.12 Collector current as a function of
collector-emitter voltage; typical values.
Fig.13 Collector current as a function of
collector-emitter voltage; typical values.
2003 Feb 20 8
Philips Semiconductors Product specification
40 V low V
3
10
handbook, halfpage
R
CEsat
(Ω)
2
10
10
1
−1
10
−1
−10
TR2 (PNP); IC/IB= 20.
(1) T
(2) T
(3) T
amb
amb
amb
= 150 °C.
=25°C.
= −55 °C.
CEsat
−1
NPN/PNP transistor
MHC470
(1)
(3)
−10 −102−10
(2)
3
IC (mA)
−10
4
PBSS4240DPN
Fig.14 Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
2003 Feb 20 9
Philips Semiconductors Product specification
40 V low V
NPN/PNP transistor
CEsat
PBSS4240DPN
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads SOT457
D
y
56
4
E
H
E
AB
X
v M
A
pin 1
index
132
e
DIMENSIONS (mm are the original dimensions)
A
mm
1.1
0.9
A
0.013
0.1
b
cD
p
1
0.40
0.26
0.25
0.10
UNIT
b
3.1
2.7
p
E
1.7
1.3
wBM
0 1 2 mm
scale
H
e
0.95
E
3.0
2.5
A
A
1
L
Qywv
p
0.6
0.33
0.2
0.23
detail X
0.2 0.10.2
Q
c
L
p
OUTLINE
VERSION
SOT457 SC-74
IEC JEDEC EIAJ
REFERENCES
2003 Feb 20 10
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
01-05-04
Philips Semiconductors Product specification
40 V low V
DATA SHEET STATUS
LEVEL
I Objective data Development This data sheet contains data from the objective specification for product
II Preliminary data Qualification This data sheet contains data from the preliminary specification.
III Product data Production This data sheet contains data from the product specification. Philips
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DATA SHEET
STATUS
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
NPN/PNP transistor
CEsat
(1)
PRODUCT
STATUS
(2)(3)
PBSS4240DPN
DEFINITION
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratanyotherconditionsabovethosegiveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuchapplicationswill be
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
2003 Feb 20 11
Philips Semiconductors – a w orldwide compan y
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2003
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands 613514/01/pp12 Date of release: 2003 Feb 20 Document order number: 9397750 10783
SCA75
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