Philips PBSS4240DPN User Manual
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DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D302
PBSS4240DPN
40 V low V
CEsat
NPN/PNP
transistor
Product specification 2003 Feb 20
Philips Semiconductors Product specification
40 V low V
CEsat
NPN/PNP transistor
FEATURES
• Low collector-emitter saturation voltage V
• High collector current capability ICand I
• High collector current gain hFE at high I
CEsat
CM
C
• High efficiency leading to reduced heat generation
• Reduced printed-circuit board area requirements.
APPLICATIONS
• Power management:
– Complementary MOSFET driver
– Dual supply line switching.
• Peripheral driver:
– Half and full bridge motor drivers
– Multi-phase stepper motor driver.
DESCRIPTION
NPN/PNP low V
transistor pair in a SOT457 (SC-74)
CEsat
plastic package.
PBSS4240DPN
QUICK REFERENCE DATA
SYMBOL PARAMETER
V
CEO
I
C
I
CRP
I
CM
R
CEsat
PINNING
PIN DESCRIPTION
1, 4 emitter TR1; TR2
2, 5 base TR1; TR2
6, 3 collector TR1; TR2
emitter-collector
voltage
collector current (DC) 1.35 −1.1 A
repetitive peak
collector current
peak collector current 3 −3A
equivalent
on-resistance
MAX.
UNIT
NPN PNP
40 −40 V
2 −2A
200 260 mΩ
MARKING
TYPE NUMBER MARKING CODE
PBSS4240DPN M3
handbook, halfpage
Top view
654
123
MAM445
645
TR1
132
Fig.1 Simplified outline SOT457 (SC-74) and
symbol.
TR2
2003 Feb 20 2
Philips Semiconductors Product specification
40 V low V
NPN/PNP transistor
CEsat
PBSS4240DPN
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor unless otherwise specified; for the PNP transistor with negative polarity
V
CBO
V
CEO
V
EBO
I
C
collector-base voltage open emitter − 40 V
collector-emitter voltage open base − 40 V
emitter-base voltage open collector − 5V
collector current (DC) −
NPN − 1.35 A
PNP −−1.1 A
I
CRP
I
CM
I
B
I
BM
P
tot
T
stg
T
j
T
amb
repetitive peak collector current note 1 − 2A
peak collector current single peak − 3A
base current (DC) − 300 mA
peak base current − 1A
total power dissipation T
≤ 25 °C; note 2 − 370 mW
amb
≤ 25 °C; note 3 − 310 mW
T
amb
T
≤ 25 °C; note 1 − 1.1 W
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
Per device
P
tot
total power dissipation T
≤ 25 °C; note 2 − 600 mW
amb
Notes
1. Operated under pulsed conditions: duty cycle δ≤20%; pulsewidthtp ≤ 10 ms; mounting pad for collector standard
footprint.
2. Device mounted on a printed-circuit board; single-sided copper; tinplated; mounting pad for collector 1 cm2.
3. Device mounted on a printed-circuit board; single-sided copper; tinplated; standard footprint.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Per transistor
R
th j-a
thermal resistance from junction to
ambient
in free air; note 1 340 K/W
in free air; note 2 110 K/W
Notes
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
2. Operated under pulsed conditions: pulse width tp≤ 10 ms; duty cycle δ≤0.20; mounting pad for collector standard
footprint.
2003 Feb 20 3
Philips Semiconductors Product specification
40 V low V
NPN/PNP transistor
CEsat
PBSS4240DPN
CHARACTERISTICS
T
=25°C unless otherwise specified.
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Per transistor unless otherwise specified; for the PNP transistor with negative polarity
I
CBO
I
CEO
I
EBO
h
FE
f
T
collector-base cut-off current VCB= 40 V; IE=0 −−100 nA
V
= 40 V; IE= 0; Tj= 150 °C −−50 µA
CB
collector-emitter cut-off current VCE= 30 V; IB=0 −−100 nA
emitter-base cut-off current VEB=5V; IC=0 −−100 nA
DC current gain VCE=5V; IC=1mA 300 −−
transition frequency IC= 50 mA; VCE=10V;
150 −−MHz
f = 100 MHz
C
c
collector capacitance VCB= 10 V; IE=Ie=0;
−−12 pF
f = 1 MHz
TR1 (NPN)
h
FE
V
CEsat
V
BEsat
V
BEon
R
CEsat
DC current gain VCE=5V; IC= 500 mA 300 − 900
V
=5V; IC=1A 200 −−
CE
V
=5V; IC= 2 A; note 1 75 −−
CE
collector-emitter saturation voltage IC= 100 mA; IB=1mA − 60 75 mV
I
= 500 mA; IB=50mA − 80 100 mV
C
I
= 1 A; IB= 100 mA − 150 200 mV
C
I
= 2 A; IB= 200 mA; note 1 − 300 400 mV
C
base-emitter saturation voltage IC= 1 A; IB= 100 mA −−1.2 V
base-emitter turn-on voltage VCE=5V; IC=1A −−1.1 V
equivalent on-resistance IC= 1 A; IB= 100 mA −−200 mΩ
TR2 (PNP)
h
FE
V
CEsat
V
BEsat
V
BEon
R
CEsat
DC current gain VCE= −5 V; IC= −100 mA 300 − 800
V
= −5 V; IC= −500 mA 250 −−
CE
V
= −5 V; IC= −1 A 160 −−
CE
= −5 V; IC= −2 A; note 1 50 −−
V
CE
saturation voltage IC= −100 mA; IB= −1mA −−90 −120 mV
I
= −500 mA; IB= −50 mA −−100 −145 mV
C
I
= −1 A; IB= −100 mA −−180 −260 mV
C
I
= −2 A; IB= −200 mA; note 1 −−400 −530 mV
C
saturation voltage IC= −1 A; IB= −50 mA −−−1.1 V
base-emitter turn-on voltage VCE= −5 V; IC= −1A −−−1V
equivalent on-resistance IC= −1 A; IB= −100 mA; note 1 −−260 mΩ
Note
1. Pulse test: t
≤ 300 µs; δ≤0.02.
p
2003 Feb 20 4
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